ROHM RCD060N25 Technical data

Data Sheet

10V Drive Nch MOSFET

RCD060N25

 Structure  Dimensions (Unit : mm)

Silicon N-channel MOSFET

Features

1) Low on-resistance.

2) High-speed switching.

3) Wide range of SOA.

4) Drive circuits can be simple.

5) Parallel use is easy.

 Application

Switching

CPT3

(SC-63)
<SOT-428>

0.75

6.5

5.1

0.9

0.65

2.30.9

(1)

(3)

(2)

2.3

0.5

1.5

5.5

2.3

1.5

0.8Min.

0.5

1.0

9.5

2.5

 Packaging specifications  Inner circuit

Package Taping

Type

Code TL
Basic ordering unit (pieces) 2500

RCD060N25 

(1) Gate

 Absolute maximum ratings (Ta = 25C)

Parameter

Symbol Limits Unit

Drain-source voltage V

Gate-source voltage V

Drain current

Source current
(Body Diode)

Continuous I

Pulsed I
Continuous I

Pulsed I

Avalanche current

Avalanche energy

Power dissipation P

E

DSS

GSS

DP

SP

I

AS

D

S

AS

250 V

30 V

*3

*1,3

6A

24 A

6A

*1

*2

*2

*4

D

24 A

3A

2.62 mJ

20 W

(2) Drain
(3) Source

Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to 150 C

*1 Pw10s, Duty cycle1%

*2 L 500H, V

*3 Limited only by maximum channel temperature allowed.

=25C

*4 T

C

=50V, RG=25, Tch=25C

DD

∗1

(1) (3)(2)

1 BODY DIODE

 Thermal resistance

Parameter

Channel to Case Rth (ch-c) 6.25 C / W

* TC=25°C

* Limited only by maximum channel temperature allowed.

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Symbol Limits Unit

*

1/6

2011.11 - Rev.A

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Data Sheet

RCD060N25

 Electrical characteristics (Ta = 25C)

Parameter

Gate-source leakage I

Drain-source breakdown voltage V

Zero gate voltage drain current I

Gate threshold voltage V
Static drain-source on-state
resistance

Forward transfer admittance l Y

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total gate charge Q

Gate-source charge Q

Gate-drain charge Q

*Pulsed

Symbol Min. Typ. Max. Unit

GSS

(BR)DSS

DSS

GS (th)

R

DS (on)

fs

iss

oss

rss

d(on)

r

d(off)

f

g

gs

gd

Conditions

--100 nA VGS=30V, VDS=0V

250 - - V ID=1mA, VGS=0V

--10AVDS=250V, VGS=0V

3.0 - 5.0 V VDS=10V, ID=1mA

*

- 410 530

*

l 2.2 - - S VDS=10V, ID=3A

- 840 - pF VDS=25V

- 50 - pF VGS=0V

- 25 - pF f=1MHz

- 22 - ns VDD 125V, ID=3A

*

*

- 20 - ns VGS=10V

*

*

- 30 - ns RL=41.67

*

*

- 13 - ns RG=10

*

*

- 15 - nC VDD 125V, ID=6A

*

*

-6-nCV

*

*

-6-nC

*

*

ID=3A, VGS=10V

m

GS

=10V

Body diode characteristics (Source-Drain)

Parameter Conditions

Forward Voltage V

*Pulsed

Symbol Min. Typ. Max. Unit

*

SD

- - 1.5 V Is=6A, VGS=0V

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2011.11 - Rev.A

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Data Sheet

RCD060N25

Electrical characteristic curves (Ta=25C)

0

0.5

1

1.5

2

0 0.2 0.4 0.6 0.8 1

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.1 Typical Output Characteristics (Ⅰ)

VGS=10.0V

VGS=7.0V

VGS=8.0V

Ta=25°C
Pulsed

0

1

2

3

4

5

6

0 2 4 6 8 10

Drain Current : I

D

[A]

Drain-Source Voltage : VDS [V]

Fig.2 Typical Output Characteristics (Ⅱ)

VGS=7.0V

VGS=10.0V

VGS=8.0V

Ta=25°C
Pulsed

0.001

0.01

0.1

1

10

2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0

Drain Currnt : I

D

[A]

Gate-Source Voltage : VGS [V]

Fig.3 Typical Transfer Characteristics

VDS=10V
pulsed

Ta= 125°C

Ta= 75°C
Ta= 25°C

Ta= -25°C

2

3

4

5

6

-50 -25 0 25 50 75 100 125 150

Gate Threshold Voltage

V

GS(th)

[V]

Channel Temperature : Tch [℃]

Fig.4 Gate Threshold Voltage vs. Channel Temperature

VDS=10V
I

D

=1mA

pulsed

0.1

1

10

0.01 0.1 1 10

Static Drain-Source On-State Resistance

R

DS(on)

[Ω]

Drain Current : ID [A]

Fig.5 Static Drain-Source On-State Resistance vs. Drain Current

VGS=10V
pulsed

Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C

0

0.5

1

1.5

-50 -25 0 25 50 75 100 125 150

Static Drain-Source On-State Resistance

R

DS(on)

[Ω]

Channel Temperature : Tch [℃]

Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature

VGS=10V
pulsed

ID=6A

ID=3A

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2011.11 - Rev.A