ROHM RCD060N25 Technical data

10V Drive Nch MOSFET

RCD060N25

Structure

Silicon N-channel MOSFET

Features

1)Low on-resistance.

2)High-speed switching.

3)Wide range of SOA.

4)Drive circuits can be simple.

5)Parallel use is easy.

Data Sheet

Dimensions (Unit : mm)

	CPT3	6.5
	(SC-63)
		5.1
	<SOT-428>
		1.5
		5.5

0.9 0.75

0.65

0.9 2.3

(1) (2) (3) 2.3

2.3
0.5
1.5		9.5
	2.5
0.8Min.	0.5
	1.0

Application

Switching

Packaging specifications

	Type	Package		Taping
		Code		TL
		Basic ordering unit (pieces)		2500
	RCD060N25			
	Absolute maximum ratings (Ta = 25 C)
		Parameter		Symbol	Limits	Unit
	Drain-source voltage			VDSS	250	V
	Gate-source voltage			VGSS	30	V
	Drain current		Continuous	ID *3	6	A
			Pulsed	IDP *1,3	24	A
	Source current		Continuous	IS	6	A
	(Body Diode)		Pulsed	ISP *1	24	A
	Avalanche current			IAS *2	3	A
	Avalanche energy			EAS *2	2.62	mJ
	Power dissipation			PD *4	20	W
	Channel temperature			Tch	150	C
	Range of storage temperature			Tstg	55 to 150	C

*1 Pw 10 s, Duty cycle 1%

*2 L 500 H, VDD=50V, RG=25 , Tch=25 C

*3 Limited only by maximum channel temperature allowed.

*4 TC=25 C

Inner circuit

(1)	Gate									1
		(1)		(2)							(3)
(2)	Drain
(3)	Source			1 BODY DIODE

Thermal resistance

Parameter	Symbol	Limits	Unit
Channel to Case	Rth (ch-c)*	6.25	C / W

* TC=25°C

* Limited only by maximum channel temperature allowed.

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RCD060N25

Data Sheet

Electrical characteristics (Ta = 25 C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Gate-source leakage

IGSS

-

-

100

nA

VGS= 30V, VDS=0V

Drain-source breakdown voltage

V(BR)DSS

250

-

-

V

ID=1mA, VGS=0V

Zero gate voltage drain current

IDSS

-

-

10

A

VDS=250V, VGS=0V

Gate threshold voltage

VGS (th)

3.0

-

5.0

V

VDS=10V, ID=1mA

Static drain-source on-state

RDS (on)*

-

410

530

m

ID=3A, VGS=10V

resistance

Forward transfer admittance

l Yfs l*

2.2

-

-

S

VDS=10V, ID=3A

Input capacitance

Ciss

-

840

-

pF

VDS=25V

Output capacitance

Coss

-

50

-

pF

VGS=0V

Reverse transfer capacitance

Crss

-

25

-

pF

f=1MHz

Turn-on delay time

td(on) *

-

22

-

ns

VDD

125V, ID=3A

Rise time

tr

*

-

20

-

ns

VGS=10V

Turn-off delay time

td(off) *

-

30

-

ns

RL=41.67

Fall time

tf

*

-

13

-

ns

RG=10

Total gate charge

Qg

*

-

15

-

nC

VDD

125V, ID=6A

Gate-source charge

Qgs

*

-

6

-

nC

VGS=10V

Gate-drain charge

Qgd

*

-

6

-

nC

*Pulsed

Body diode characteristics (Source-Drain)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Forward Voltage

VSD *

-

-

1.5

V

Is=6A, VGS=0V

*Pulsed

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RCD060N25

Data Sheet

Electrical characteristic curves (Ta=25 C)

		Fig.1 Typical Output Characteristics ( )
	2
		Ta=25°C
		Pulsed
			VGS=10.0V
	1.5		VGS=8.0V
[A]
D
: I
Drain Current	1				VGS=7.0V
	0.5
	0
	0	0.2	0.4	0.6	0.8	1

Drain-Source Voltage : VDS [V]

Fig.3 Typical Transfer Characteristics

	10
		VDS=10V
		pulsed
	1	Ta= 125°C
[A]		Ta= 75°C
		Ta= 25°C
D
: I		Ta= −25°C
Drain Currnt	0.1
	0.01
	0.001
	2.0	2.5	3.0	3.5	4.0	4.5	5.0	5.5	6.0	6.5	7.0	7.5	8.0

Gate-Source Voltage : VGS [V]

Fig.5 Static Drain-Source On-State Resistance vs. Drain Current

		10
		VGS=10V
Resistance		pulsed
			Ta= 75°C
			Ta= 125°C
State-	Ω]		Ta= 25°C
			Ta= −25°C
On	[
	DS(on)	1
Source	R
Static Drain-
		0.1
		0.01	0.1	1	10
			Drain Current :	ID [A]

		Fig.2 Typical Output Characteristics ( )
	6
		Ta=25°C
		Pulsed
	5			VGS=10.0V
[A]				VGS=8.0V
	4
D
: I
Drain Current	3
	2
					VGS=7.0V
	1
	0
	0	2	4	6	8	10
			Drain-Source Voltage : VDS [V]

Fig.4 Gate Threshold Voltage vs. Channel Temperature

		6
				VDS=10V
				ID=1mA
				pulsed
Voltage	[V]	5
Threshold	V
Gate	GS(th)	4
		3
		2
		-50		-25		0		25		50		75		100 125 150

Channel Temperature : Tch [ ]

Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature

	1.5
		VGS=10V
		pulsed
Resistance	1
-State
	[Ω]			ID=6A
On	DS(on)
Source	R
-
Drain	0.5					ID=3A
Static
	0
	-50	-25	0	25	50	75	100	125	150
			Channel Temperature :				Tch [ ]

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© 2011 ROHM Co., Ltd. All rights reserved.