ROHM EMD38 Technical data
EMD38
Transistors
General purpose transistor
(isolated transistors)
EMD38
DTC114Y
zApplications
Driver
zFeatures
1) DTr
2) Mounting possible with EMT3 automatic mounting
zStructure
NPN / PNP Silicon epitaxial planar dig ital transistor
zEquivalent circuit
and DT A1 13Z
1 : NPN digital transistor
DTr
2 : PNP digital transistor
machines.
EMD38
are housed independently in a EMT6 package.
zDimensions (Unit : mm)
EMT6
ROHM : EMT6
(4)(5)(6)
R1
R2
1pin mark
(1)
Abbreviated symbol : D38
1.6
1.0
0.5
0.5
(5)
(6)
(4)
(2)
(3)
0.22
Each lead has same dimensions
1.2
0.5
1.6
0.13
DTr2
R1
(3)(2)(1)
DTr1 : R1/R
DTr
2
: R1/R
2
=10kΩ/47kΩ
2
=1kΩ/10kΩ
DTr1
R2
zPackaging specifications
Type EMD38
Package
Marking
Code
Basic ordering unit (pieces)
EMT6
D38
T2R
8000
1/5
EMD38
Transistors
zAbsolute maximum ratings (Ta=25°C)
DTr1
Parameter Symbol
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
∗1 Characteristics of built-in transistor
∗2 Each terminal mounted on a recommended land, and only DTr1 is on duty.
V
CC
IN
I
O
I
C (Max.)
P
d
Tj 150 °C
Tstg −55 to +150 °C
DTr2
Parameter Symbol
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
∗3 Characteristics of built-in transistor
∗4 Each terminal mounted on a recommended land, and only DTr2 is on duty.
V
CC
IN
O
I
C (Max.)
I
P
d
Tj 150 °C
Tstg −55 to +150 °C
DTr1/DTr2
Parameter Symbol
Power dissipation
Storage temperature
Each terminal mounted on a recommended land.
∗
P
Tstg
d
DTr1
50 V
−6 to +40
70
∗1
100
∗2
120
DTr2
−50 V
−10 to +5
−100
∗3
−100
∗4
120
Limits
150(TOTAL) mW ∗
−55 to +125
Unit
VV
mA
mW
Unit
VV
mA
mW
Unit
°C
2/5
Loading...