
Excelics EMA205B
TENTATIVE DATA SHEET
9-16 GHz Low Noise MMIC
FEATURES
•• 9-16 GHz BANDWIDTH
•• +18.0 dBm TYPICAL OUTPUT POWER
•• 14 dB ±± 1.5 dB TYPICAL POWER GAIN
•• TWO SECTION, DISTRIBUTED AMPLIFIER
•• DUAL BIAS SUPPLY
•• 0.3 MICRON RECESSED “MUSHROOM” GATE
•• Si3N4 PASSIVATION
•• ADVANCED EPITAXIAL HETEROJUNCTION
PROFILE PROVIDES EXTRA HIGH POWER
EFFICIENCY, AND HIGH RELIABILITY
ELECTRICAL CHARACTERISTICS1 (Ta = 25 OC)
SYMBOL PARAMETERS/TEST CONDITIONS MIN TYP MAX UNIT
EMA205B
G1-4
Chip Size 1060 x 2000 microns
Chip Thickness: 75 ± 13 microns
All Dimensions In Microns
D1 D3-4
EXCELICS
D2 GND
F
P
1dB
Gss
∆∆Gss
NF
VSWR in
VSWR out
Idd
Vdd
Operating Frequency Range 9 16 GHz
Ouput Power at 1dB Gain Compression 18 dBm
Small Signal Gain 14 dB
Small Signal Gain Flatness
Noise Figure 4 dB
Input VSWR 1.5:1
Output VSWR 2.0:1
Power Supply Current 160 mA
Power Supply Voltage 5 8 V
± 1.5
MAXIMUM RATINGS AT 25OC
SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2
Vds
Vgs
Ids
Igf
Pin
Tch
Tstg
Pt
Note: 1. Exceeding any of the above ratings may result in permanent damage.
Drain-Source Voltage 12V 8V
Gate-Source Voltage -8V -3V
Drain Current Idss 225mA
Forward Gate Current 55 mA 9mA
Input Power 13dBm @3dB Compression
Channel Temperature 175oC 150oC
Storage Temperature -65/175oC -65/150oC
Total Power Dissipation 1.1 W 900 mW
2. Exceeding any of the above ratings may reduce MTTF below design goals.
Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054
Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com
dB

TENTATIVE DATA SHEET
9-16 GHz Low Noise MMIC
S-PARAMETERS ( On wafer Sij measurements )
FREQ --- S11 --- --- S21 --- --- S12 --- --- S22 --(GHz) MAG ANG MAG ANG MAG ANG MAG ANG
1 0.365 -129.2 0.276 82.1 0.0038 -28.6 0.620 -112.2
2 0.471 -172.2 0.441 47.4 0.0011 -88.5 0.844 -167.7
3 0.450 172.4 0.416 3.6 0.0008 -125.9 0.810 158.0
4 0.422 162.0 0.389 16.1 0.0006 -139.8 0.732 130.9
5 0.389 154.2 0.826 35.4 0.0007 -175.1 0.614 104.5
6 0.350 148.0 1.825 8.7 0.0011 160.0 0.430 73.8
7 0.312 143.6 3.185 -29.7 0.0020 139.7 0.185 34.2
8 0.276 141.4 4.559 -73.3 0.0030 97.5 0.078 -139.8
9 0.250 138.6 5.385 -117.5 0.0037 58.0 0.245 168.1
10 0.234 136.9 5.626 -159.0 0.0045 18.1 0.300 137.5
11 0.226 139.7 5.497 166.2 0.0052 -10.6 0.275 115.0
12 0.221 141.9 5.350 136.0 0.0052 -34.2 0.214 99.9
13 0.222 140.6 5.326 107.4 0.0060 -54.4 0.149 95.2
14 0.220 135.3 5.360 79.5 0.0067 -76.5 0.092 109.1
15 0.235 131.2 5.594 50.3 0.0077 -103.0 0.088 149.1
16 0.271 127.6 6.062 18.7 0.0101 -130.2 0.132 172.4
17 0.385 119.2 6.709 -17.2 0.0122 -160.7 0.205 176.3
18 0.511 89.3 6.771 -59.4 0.0122 160.1 0.314 172.1
19 0.577 53.6 5.973 -105.7 0.0111 115.1 0.457 159.6
20 0.577 21.6 4.309 -151.4 0.0072 74.4 0.608 141.4
21 0.564 -2.5 2.567 171.8 0.0022 33.0 0.711 119.8
22 0.589 -23.7 1.423 155.1 0.0004 127.1 0.733 98.4
23 0.606 -42.8 1.095 146.8 0.0018 108.7 0.686 81.3
24 0.623 -58.4 0.917 130.5 0.0021 87.5 0.628 69.0
25 0.6426 -70.4 0.754 112.2 0.0023 72.2 0.585 59.3
26 0.664 -79.7 0.607 94.3 0.0027 75.1 0.555 50.8
27 0.694 -88.2 0.487 76.6 0.0031 76.8 0.531 42.8
28 0.732 -98.1 0.399 58.6 0.0026 68.9 0.511 34.9
29 0.761 -106.2 0.330 41.6 0.0015 58.9 0.496 27.0
30 0.791 -114.1 0.271 24.2 0.0014 23.6 0.480 19.1
EMA205B
5V, 1/2 Idss_6

TENTATIVE DATA SHEET
9-16 GHz Low Noise MMIC
ASSEMBLY DRAWING
EMA205B
50pF
D1 D3-4
EXCELICS
D2 GND
50pF
V
dd
50 ohm line on Alumina
RF OUTPUT
50 ohm line on Alumina
RF INPUT
0.1 uF 0.1 uF
G1-4
V
EMA205B
50pF
GG
The length of RF wires should be as short as possible. Use at least two wires between RF pad and 50 ohm line and
separate the wires to minimize the mutual inductance.
CHIP OUTLINE
VD1
1580
VD3-4
1730
1060
EMA205B
D1 D3-4
RF IN
620
100
0
G1-4
90
VGG1-4
0
Chip Size 1060 x 2000 microns
Chip Thickness: 75 ± 13 microns
PAD Dimensions: 1. DC 100 x 100 microns
2. RF 80 x 68 microns
All Dimensions In Microns
EXCELICS
D2 GND
1580
VD2
RF OUT
330
2000

TENTATIVE DATA SHEET
9-16 GHz Low Noise MMIC
TYPICAL APPLICATION PERFORMANCE
EMA205B
Small Signal Gain
25
20
15
10
5
0
0 5 10 15 20 25 30
Noise Figure
12
10
8
6
4
2
0
5 10 15 20
Vdd=5V Idd=125mA
frequency [GHz]
Vd=3.5V Id=150mA
Frequency [GHz]
0
-5
-10
-15
-20
-25
25
20
15
10
5
0
Input & Output Return loss
Vdd=5V Idd=125mA
Input
Output
0 5 10 15 20 25 30
P1dB
8 10 12 14 16 18
Vdd=5V
frequency [GHz]
frequency [GHz]