ROHM EMB3, IMB3A, UMB3N Schematic [ru]

EMB3 / UMB3N / IMB3A

Transistors

General purpose (dual digital transistors)

EMB3 / UMB3N / IMB3A

zFeatures

1) Two DTA143T chips in a EMT6 or UMT6 or SMT6
package.

2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.

3) Transistor elements are independent, eliminating
interference.

zStructure

Dual PNP digital transistor
(each with single built in resistor)

The following characteristics apply to both DTr

1

and DTr2.

zEquivalent circuit

EMB3, UMB3N IMB3A

DTr

2

(3) (2) (1)

(4) (5) (6)

R

1

DTr

R

1

R1=4.7kΩ

1

(3) (2) (1)

DTr

2

R1=4.7kΩ

1

R

DTr

R

1

(4) (5) (6)

1

zPackaging specifications

Type
EMB3
UMB3N
IMB3N

Package
Code
Basic ordering unit (pieces)

T2R

8000

−

−

Taping

TN

3000

−

−

T110
3000

−

−

zExternal dimensions (Unit : mm)

EMB3

1pin mark

ROHM : EMT6

UMB3N

1pin mark

ROHM : UMT6
EIAJ : SC-88

IMB3A

1pin mark

ROHM : SMT6
EIAJ : SC-74

1.6

1.0

0.5

0.5

(5)

(6)

(4)

(2)

(1)

(3)

0.22

Each lead has same dimensions

Abbreviated symbol : B3

2.0

1.3

0.65

0.65

(5)

(4)

(6)

(3)

(1)

(2)

0.2

Each lead has same dimensions

Abbreviated symbol : B3

2.9

1.9

0.95

0.95

(5)

(6)

(4)

(1)

(2)

(3)

0.3

Each lead has same dimensions

Abbreviated symbol : B3

0.5

1.2

1.6

0.13

0.9

0.7

2.1

1.25

0.15

0.1Min.

1.1

0.8

1.6

2.8

0.15

0.3Min.

Rev.B 1/2

EMB3 / UMB3N / IMB3A

m

m

)

Transistors

zAbsolute maximum ratings (Ta = 25°C)

Parameter Symbol Limits
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current

Collector power
dissipation

EMB3,UMB3N

IMB3A
Junction temperature
Storage temperature

1 120mW per element must not be exceeded.

∗

2 200mW per element must not be exceeded.

∗

V

CBO

V

CEO

V

EBO

I

C

P

C

Tj 150

Tstg

−50

−50

−5

−100

150 (TOTAL)
300 (TOTAL)

−55 to +150 °C

zElectrical characteristics (Ta = 25°C)

Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Input resistance

Transition frequency of the device

∗

Symbol

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

EBO

V

CE (sat)

h

FE

fT

R

1

Typ. Max. Unit Conditions

Min.

−50

−50

100

3.29

−5

−

−

−

−

−

−

−

−

−

250
250

−

4.7

zElectrical characteristic curves

1k

500

FE

200

100

50

20

10

DC CURRENT GAIN : h

−100µ−1m

Ta=100°C

25°C

−40°C

5

2
1

−200µ−2m

−500µ−5m

COLLECTOR CURRENT : I

−10m

VCE=−5V

−20m

C

(A)

−50m−100

Fig.1 DC current gain vs. collector

current

−1

(V

−500m

CE(sat)

−200m

−100m

−50m

−20m

−10m

−5m

−2m

−1m

−100µ−1m

COLLECTOR SATURATION VOLTAGE : V

Ta=100°C

−200µ−2m

−500µ−5m

COLLECTOR CURRENT : I

Fig.2 Collector-emitter saturation

voltage vs. collector current

Unit

V
V
V

mA

1

∗

mW

2

∗

°C

V
V
V

µA
µA

V

−

MHz

kΩ

−50m−100

C=−50µA

I

C=−1mA

I
I

E=−50µA

CB=−50V

V
V

EB=−4V

C/IB=−5mA/−2.5mA

I

CE=−5V, IC=−1mA

V

−

−

−

−0.5

−0.5

−0.3

600

− VCE=10mA, IE=−5mA, f=100MHz

6.11

lC/lB=20

25°C

−40°C

−10m

−20m

C

(A)

∗

−

Rev.B 2/2