ROHM EMA2, FMA2A, UMA2N Schematic [ru]

EMA2 / UMA2N / FMA2A

Transistors

Emitter common
(dual digital transistors)

EMA2 / UMA2N / FMA2A

zFeatures zExternal dimensions (Unit : mm)

1) Two DTA144E transistors in a EMT or UMT or SMT package.

2) Mounting cost and area can be cut in half.

zStructure

Dual PNP silicon transistor (each with two built in resistors)

The following characteristics apply to both DTr

1 and DTr2.

zEquivalent circuit

EMA2 / UMA2N FMA2A

DTr

R

1

2

(4)

(3) (2) (1)

R2R

2

(5)

R
DTr

1

1

R1=47kΩ

2

=47kΩ

R

DTr

R

1
2

(2)

(3) (4) (5)

R2R

2

(1)

R
DTr

1

1

R1=47kΩ

2

=47kΩ

R

zAbsolute maximum ratings (Ta = 25°C)

Parameter

Supply voltage

Input voltage

Output current

Power
dissipation

EMA2, UMA2N

FMA2A
Junction temperature
Storage temperature

1 120mW per element must not be exceeded.

∗

2 200mW per element must not be exceeded.

∗

Symbol Limits Unit

V

V

C (Max.)

I

Pd

Tstg

CC

IN

I

O

Tj

−50

−40

10

−30

−100

150 (TOTAL)
300 (TOTAL)

150 ˚C

−55 to +150

V

V

mA

mW

˚C

1

∗

2

∗

EMA2

ROHM : EMT5

UMA2N

ROHM : UMT5
EIAJ : SC-88A

FMA2A

0.3to0.6

ROHM : SMT5
EIAJ : SC-74A

(3)

(4)

0.5

1.0

(2)

0.22

0.13

0.5

(1)

(5)

1.2

1.6

0.5

Each lead has same dimensions

Abbreviated symbol : A2

)

)

4

3

(

(

)

0.65

2

0.2

0.15

0.1Min.

(

)

)

6

(

0.65

1

(

1.25

2.1

0.7

0to0.1

Each lead has same dimensions

Abbreviated symbol : A2

)

)

3

2

(

(

0.3

0.15

0.95

2.9

1.9

)(

4

(

0.95

)

)

5

1

(

1.6

2.8

0.8

0to0.1

Each lead has same dimensions

Abbreviated symbol : A2

1.6

1.3

2.0

0.9

1.1

Rev.A 1/2

EMA2 / UMA2N / FMA2A

Transistors

zElectrical characteristics (Ta = 25°C)

Parameter

Symbol

Input voltage

Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio

Transition frequency of the device

∗

R2 / R1

zPackaging specifications

Package

Code TR T148

Basic ordering

Type

unit (pieces)

EMA2
UMA2N
FMA2A

zElectrical characteristic curves

−100

−50

−20

I (on) (V)

−10

Ta=−40˚C

−5

25˚C

100˚C

−2

−1

−500m

INPUT VOLTAGE : V

−200m

−100m

−100µ

−1m −10m −100m

−200µ −2m −20m −500µ

OUTPUT CURRENT : I

−5m

Fig.1 Input voltage vs. output current

(ON characteristics)

−1

−500m

(V)

−200m

O (on)

−100m

−50m

−20m

−10m

OUTPUT VOLTAGE : V

Ta=100˚C

25˚C

−40˚C

−5m

−2m

−1m

−100µ

−1m −10m −100m

−200µ −2m −20m −500µ −5m −50m

OUTPUT CURRENT : I

Fig.4 Output voltage vs. output

current

Rev.A 2/2

Min.

I (off)

V
VI (on)

VO (on)

IO (off)

−

−3

−

II

−

−

GI

68

f

T 250

−

R1

32.9

0.8

T2R

8000

VO=−0.3V

−50m

O (A)

lO/lI=20

O

(A)

Typ. Max.

−

−

−0.1

−

−

−

47

1

Unit Conditions

−0.5

−0.3

0.18

−

−0.5

61.1

1.2

−

−

−

V

V

mA

µA

−

MHz

kΩ

−

V
V
I

O

V
V
V

V

Taping

3000 3000

−10m

VCC=−5V

−5m

−2m

Ta=100˚C

A)

OUTPUT CURRENT : Io (

25˚C

−1m

−40˚C

−500µ

−200µ

−100µ

−50µ

−20µ

−10µ

−5µ

−2µ

−1µ

0 −3

−0.5 −1 −1.5 −2 −2.5
INPUT VOLTAGE : V

Fig.2 Output current vs. input voltage

(OFF characteristics)

CC

=

−5V, IO

=

−100µA

O

=

−0.3V, IO

=

−2mA

=

−10mA/II

=

−0.5mA

I

=

−5V

CC

=

−50V, VI=0V

O

=

−5V, IO

=

−5mA

CE

=

−10V, IE=5mA, f=100MH

−

−

I (off)

(V)

Z

∗

1k

500

Ta=100˚C

I

200

25˚C

−40˚C

100

50

20
10

5

DC CURRENT GAIN : G

2
1

−100µ −1m −10m −100m

−200µ

Fig.3 DC current gain vs. output

−2m −20m −500µ −5m −50m

OUTPUT CURRENT : I

current

O

VO=−5V

(A)