ROHM EM6J1 Technical data

T

C

1.2V Drive Pch MOSFET

EM6J1

zStructure zDimensions (Unit : mm)
Silicon P-channel MOSFET

zFeatures

1) Two Pch MOSFET are put in EMT6 package.

2) High-speed switching.

3) Ultra low voltage drive (1.2V drive).

4) Built-in G-S Protection Diode.

zApplications

Switching

zPackaging specifications zInner circuit

Type

EM6J1

Package
Code
Basic ordering unit (pieces)

Taping

T2R

8000

zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for the Tr1 and Tr2.>

EMT6

Abbreviated symbol : J01

(6)

∗2

(1)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

(5)

∗1

(2)

Each lead has same dimensions

∗1

(4)

(3)

∗2

(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Drain
(4) Tr2 Source
(5) Tr2 Gate
(6) Tr1 Drain

Parameter

Drain-source voltage
Gate-source voltage

Drain current
Source current

(Body Diode)
Total power dissipation
Channel temperature

Range of storage temperature

∗1 Pw 10µs, Duty cycle 1%
∗2 Each terminal mounted on a recommended land

Continuous
Pulsed
Continuous
Pulsed

Symbol

DSS
GSS

D

DP

S

SP

P

D

Limits

−20
±10

∗1

∗1

∗2

±200
±800

−100

−800

150
120
150

−55 to +150

Unit

VV

VV
mAI
mAI
mAI
mAI

mW / TOTAL

mW / ELEMEN

°CTch
°CTstg

zThermal resistance

Parameter Symbol Limits Unit

hannel to ambient

∗ Each therminal mounted on a recommended land

Rth (ch-a)

833

∗

°C / W / TOTAL

°C / W / ELEMENT1042

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2009.05 - Rev.A

EM6J1

zElectrical characteristics (Ta=25°C)
<It is the same ratings for the Tr1 and Tr2.>

Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage

V

(BR) DSS

Zero gate voltage drain current

V

Static drain-source on-state
resistance

R

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge

∗Pulsed

zBody diode characteristics (Source-drain)

Parameter Symbol

∗

Pulsed

I

GSS

I

DSS

GS (th)

DS (on)

Y

C

iss

C

oss

C

rss

t

d (on)

t

r

t

d (off)

t

f

Q

Q

gs

Q

gd

V

SD

∗

∗

fs

∗

∗

∗

∗

∗

g

∗

∗

∗

Min.

Typ. Max.

−−±10 µAV

Unit

GS

Conditions

= ±10V, VDS=0V

−20 −−VID=−1mA, VGS=0V

−−−1 µAVDS=−20V, VGS=0V

−0.3 −−1.0 V VDS=−10V, ID=−100µAGate threshold voltage

− 0.8 1.2 I

=−200mA, VGS=−4.5V

D

− 1.0 1.5 ΩΩID=−100mA, VGS=−2.5V

− 1.3 2.2 ID=−100mA, VGS=−1.8V

− 1.6 3.5 ΩΩI

=−40mA, VGS=−1.5V

D

− 2.4 9.6 Ω ID=−10mA, VGS=−1.2V

0.2 −−SV

=−10V, ID=−200mA

DS

− 115 − pF VDS=−10V

− 106− pF VGS=0V

−

−

−

−

−

−

−

−−nC RL 50Ω, RG=10Ω

Min. Typ. Max.

− pF f=1MHz

− ns

6
4

− ns

17

− ns

− ns

17

1.4

− nC

− nC VGS=−4.5V

0.3

0.3

Unit

V

DD

−10V

ID=−100mA

GS

=−4.5V

V

L

100Ω

R

G

=10Ω

R

−10V, ID=−200mA

V

DD

Conditions

−−−1.2 V IS= −200mA, VGS=0VForward voltage

Data Sheet

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2/4

2009.05 - Rev.A

EM6J1

zElectrical characteristics curves

Data Sheet

0.2

VGS= - 10.0V
V

= -4.5V

VGS= -1.5V

VGS= -1.2V

V

GS

GS

= -3.2V

0.15

[A]

D

0.1

0.05

DRAIN CURRENT : -I

0

0 0.2 0.4 0.6 0.8 1

DRAIN-SOURCE VOLTAGE : -VDS[V] DR AIN-SOU RCE VOLTAG E : -VDS[V]

Fi g.1 T ypic al output c haract eris tics (Ⅰ) Fig .2 Typical output char acteri stics (Ⅱ)

10000

Ta= 25°C
Pulsed

]

Ω

(ON)[m

DS

1000

RESIST ANCE : R

STATIC DRAIN-SOURCE ON-STATE

100

0.001 0.01 0.1 1

DRAIN-CURRENT : -I

Fi g.4 Stat ic D rain- Source O n-State

Resistance vs. Drain Curr ent(Ⅰ)

VGS= -2.5V
V

= -2.0V

GS

V

= -1.8V

GS

VGS= -1.0V

VGS= -1.2V

= -1.5V

V

GS

V

= -1.8V

GS

V

= -2.5V

GS

V

= -4.5V

GS

[A]

D

Ta= 25°C
Pulsed

0.2

[A]

D

0.15

0.1

DRAIN CURRENT : -I

0.05

0

10000

]

Ω

(ON)[m

DS

1000

RESIST ANCE : R

STATIC D RAIN-SOUR CE ON-STAT E

100

0.001 0.01 0.1 1

VGS= -4.5V

VGS= -2.5V
V

= -1.8V

GS

V

= -1.5V

GS

0246 810

VGS= -4.5V
Pulsed

DRAIN-CURRENT : -ID[A]

Fi g.5 Static Drai n-Source On- State

Resistance vs. Drain Curr ent(Ⅱ)

VGS= -1.2V

VGS= -1.0V

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

Ta=25°C
Pulsed

1

VDS= -10V
Pulsed

[A]

0.1

D

Ta= 125°C

Ta= 75°C

0.01
Ta= 25°C

Ta= - 25°C

0.001

DRAIN CURRENT : -I

0.0001

00.5 11.5

GATE- SOURC E VOLTAGE : -VGS[V]

Fi g.3 T ypic al Tr ansfer C haract eris tics

10000

VGS= -2.5V
Pulsed

]

Ω

(ON)[m

DS

1000

RESIST ANCE : R

STATIC DRAIN-SOURCE ON-STATE

100

0.001 0.01 0.1 1

DRAIN-CURRENT : -ID[A]

Fi g.6 St atic D rai n-Sourc e On-St ate

Resistance vs. Drain Curr ent(Ⅲ)

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

10000

VGS= -1.8V
Pulsed

]

Ω

(ON)[m

DS

1000

RESIST ANCE : R

STATI C DRAIN -SOUR CE ON- STATE

100

0.001 0.01 0.1 1

DRAIN-CURRENT : -ID[A]

Fi g.7 St atic D rai n-Sourc e On-St ate

Resi stance vs. Drai n Curr ent(Ⅳ)

Ta= 125°C
Ta=75°C
Ta=25°C
Ta= -25°C

10000

VGS= -1.5V
Pulsed

]

Ω

(ON)[m

DS

1000

RESIST ANCE : R

STATI C DRAIN -SOUR CE ON- STATE

100

0.001 0.01 0.1

Fi g.8 Stat ic D rain- Source O n-State

Resistance vs. Drain Curr ent(Ⅴ)

Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C

DRAIN-CURRENT : -I

10000

VGS= -1.2V
Pulsed

]

Ω

(ON)[m

DS

1000

RESISTANCE : R

STATI C DRAIN -SOUR CE ON- STATE

100

0.001 0.01 0.1

[A]

D

DRAIN -CURR ENT : -I

Fi g.9 Stat ic D rain- Source O n-State

Resistance vs. Drain Curr ent(Ⅵ)

Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C

[A]

D

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2009.05 - Rev.A

it

V

Fig.1-2 Switching Waveforms

Fig.2-1 Gate Charge Measurement Circuit

Fig.2-2 Gate Charge Waveform

V

EM6J1

1.0
VDS= - 10V

Pulsed

Ta= -25°C
Ta= 25°C
Ta= 75°C
Ta= 125°C

0.1

FOR WARD TRANSF ER ADM ITTANC E : |Yfs| [S]

0.01 0.1 1

DRAIN-CURRENT : -ID[A]

Fi g.10 For ward Tr ansfer Admi ttance
vs. Drain Curr ent

1000

100

td(off)

t

f

10

SWITC HING TIME : t [ns]

t

td(on)

r

1

0.01 0.1 1

DRAIN-CURRENT : -ID[A]

zMeasurement circuit

V

I

GS

D

D.U.T.

R

G

Ta= 25°C
V

= - 10V

DD

=-4.5V

V

GS

=10Ω

R

G

Pulsed

V

DS

R

L

V

DD

1

VGS=0V
Pulsed

0.1

REVERSE DRAIN CURRENT : -Is [A]

0.01

00.511.5

SOUR CE-D RAIN VOLT AGE : -VSD [V]

Fi g.11 Rever se Drai n Curr ent
vs. Sourse- Drain Voltage

5

[V]

4

GS

3

2

1

GATE- SOURC E VOLTAGE : -V

0

00.511.5

TOTAL GATE CHARGE : Qg [nC] DRAIN-SOURCE VOLTAGE : -VDS[V]

Fi g.14 Dynamic Input Charac teris tics

Ta= 125°C

Ta= 75°C
Ta= 25°C

Ta= -25°C

Ta= 25°C
V
I
R
Pulsed

GS

10%

50%

V

DS

t

d

(on)

t

DD

= -0.2A

D

G

on

= - 10V

=10Ω

90%

Pulse Width

10%

t

r

5

]

Ω

4

(ON)[

DS

3

2

RESIST ANCE : R

1

STATIC DRAIN- SOURCE ON -STATE

0

1000

100

10

CAPAC ITANCE : C [pF]

1

0.01 0.1 1 10 100

90%

ID= -0.2A

ID= - 0.01A

0246810

GATE- SOURC E VOLTAGE : -VGS[V]

Fi g.12 Stati c Dr ain-Sour ce On-St ate
Resistance vs. Gate Source Voltag e

Ta=25°C
f=1M Hz
V

=0V

GS

Coss

Crss

Fi g.15 Typic al Capaci tance
vs. Drain-Source Voltag eFig.13 Switching Characteristics

50%

10%

90%

t

d

(off)

t

f

t

off

Ciss

Ta= 25°C
Pulsed

Data Sheet

Fig.1-1 Switching Time Measurement Circu

V

GS

D

I

I

G(Const.)

D.U.T.

R

G

zNotice

This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.

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2009 ROHM Co., Ltd. All rights reserved.

V

G

V

DS

R

L

V

DD

GS

QgsQ

Q

g

gd

Charge

4/4

2009.05 - Rev.A

Notes

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Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
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