ROHM EM6J1 Technical data

T

C

1.2V Drive Pch MOSFET

EM6J1

zStructure zDimensions (Unit : mm)
Silicon P-channel MOSFET

zFeatures

1) Two Pch MOSFET are put in EMT6 package.

2) High-speed switching.

3) Ultra low voltage drive (1.2V drive).

4) Built-in G-S Protection Diode.

zApplications

Switching

zPackaging specifications zInner circuit

Type

EM6J1

Package
Code
Basic ordering unit (pieces)

Taping

T2R

8000

zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for the Tr1 and Tr2.>

EMT6

Abbreviated symbol : J01

(6)

∗2

(1)

∗1 ESD PROTECTION DIODE
∗2 BODY DIODE

(5)

∗1

(2)

Each lead has same dimensions

∗1

(4)

(3)

∗2

(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Drain
(4) Tr2 Source
(5) Tr2 Gate
(6) Tr1 Drain

Parameter

Drain-source voltage
Gate-source voltage

Drain current
Source current

(Body Diode)
Total power dissipation
Channel temperature

Range of storage temperature

∗1 Pw 10µs, Duty cycle 1%
∗2 Each terminal mounted on a recommended land

Continuous
Pulsed
Continuous
Pulsed

Symbol

DSS
GSS

D

DP

S

SP

P

D

Limits

−20
±10

∗1

∗1

∗2

±200
±800

−100

−800

150
120
150

−55 to +150

Unit

VV

VV
mAI
mAI
mAI
mAI

mW / TOTAL

mW / ELEMEN

°CTch
°CTstg

zThermal resistance

Parameter Symbol Limits Unit

hannel to ambient

∗ Each therminal mounted on a recommended land

Rth (ch-a)

833

∗

°C / W / TOTAL

°C / W / ELEMENT1042

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c

○

2009 ROHM Co., Ltd. All rights reserved.

1/4

2009.05 - Rev.A

EM6J1

zElectrical characteristics (Ta=25°C)
<It is the same ratings for the Tr1 and Tr2.>

Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage

V

(BR) DSS

Zero gate voltage drain current

V

Static drain-source on-state
resistance

R

Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge

∗Pulsed

zBody diode characteristics (Source-drain)

Parameter Symbol

∗

Pulsed

I

GSS

I

DSS

GS (th)

DS (on)

Y

C

iss

C

oss

C

rss

t

d (on)

t

r

t

d (off)

t

f

Q

Q

gs

Q

gd

V

SD

∗

∗

fs

∗

∗

∗

∗

∗

g

∗

∗

∗

Min.

Typ. Max.

−−±10 µAV

Unit

GS

Conditions

= ±10V, VDS=0V

−20 −−VID=−1mA, VGS=0V

−−−1 µAVDS=−20V, VGS=0V

−0.3 −−1.0 V VDS=−10V, ID=−100µAGate threshold voltage

− 0.8 1.2 I

=−200mA, VGS=−4.5V

D

− 1.0 1.5 ΩΩID=−100mA, VGS=−2.5V

− 1.3 2.2 ID=−100mA, VGS=−1.8V

− 1.6 3.5 ΩΩI

=−40mA, VGS=−1.5V

D

− 2.4 9.6 Ω ID=−10mA, VGS=−1.2V

0.2 −−SV

=−10V, ID=−200mA

DS

− 115 − pF VDS=−10V

− 106− pF VGS=0V

−

−

−

−

−

−

−

−−nC RL 50Ω, RG=10Ω

Min. Typ. Max.

− pF f=1MHz

− ns

6
4

− ns

17

− ns

− ns

17

1.4

− nC

− nC VGS=−4.5V

0.3

0.3

Unit

V

DD

−10V

ID=−100mA

GS

=−4.5V

V

L

100Ω

R

G

=10Ω

R

−10V, ID=−200mA

V

DD

Conditions

−−−1.2 V IS= −200mA, VGS=0VForward voltage

Data Sheet

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c

○

2009 ROHM Co., Ltd. All rights reserved.

2/4

2009.05 - Rev.A