ROHM BR93LC46RFJ-W, BR93LC46RF-W, BR93LC46FV-W, BR93LC46FJ-W Datasheet

BR93LC46-W / BR93LC46F-W / BR93LC46RF-W /

Memory ICs

BR93LC46FJ-W / BR93LC46RFJ-W / BR93LC46FV-W

64×16bits serial EEPROM

BR93LC46-W / BR93LC46F-W / BR93LC46RF-W /
BR93LC46FJ-W / BR93LC46RFJ-W / BR93LC46FV-W

The BR93LC46-W series are CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed
electrically. Each is configured of 64 words × 16 bits (1,024 bits), and each word can be accessed individually and data
read from it and written to it. Operation control is performed using five types of commands.
The commands, addresses, and data are input through the DI pin under the control of the CS and SK pins. In a write
operation, the inter nal stat us si gnal (READ Y or BUSY) can be o utput fro m th e DO pin.

z

zApplications

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VCRs, TVs, printers, car stereos, cordless telephones, short wave radios, programmable DIP switches, and
other battery-powered equipment requiring low voltage and low current

z

zFeatures

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1) 64 words × 16 bits EEPROM

2) Operati ng v oltag e ran ge
When reading : 2.0 to 5.5V
When writing : 2.7 to 5.5V

3) Low current consumption
Operating (at 5V) : 3mA (Max .)
Standby (at 5V) : 5µA (M ax.)

4) Address can be incremented automatically during
read operations.

5) Auto erase and auto complete functions can be used
during write operations.

6) A write instru ction i nhibit function allow s :

- write protection when power supply voltage is low.

- write disable state at power up.

- writing using command codes.

7) Compact packages

8) Display of READY / BUSY stat us

9) TTL-compatible input / output

10) Rewriting possible up to 100,000 times

11) Data can be stored for ten years without corruption.

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Block diagram

DO

Power supply

CS

SK

DI

Command decode
Control
Clock generation

Command
register

Dummy bits

Address
buffer

Data
register

6bits

16bits

voltage detector

Write
disable

Address
decoder

R / W
amplifier

High voltage
generator

6bits

1,024bits
EEPROM array

16bits

Memory ICs

z

zPin descriptions

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BR93LC46-W / BR93LC46F-W / BR93LC46RF-W /

BR93LC46FJ-W / BR93LC46RFJ-W / BR93LC46FV-W

CS

1

SK

2

BR93LC46-W

V

8

N.C.

7

BR93LC46RF-W
BR93LC46RFJ-W

DI

DO

3

4

Fig.1

6

N.C.

5

GND

Pin No.

BR93LC46-W
BR93LC46RF-W
BR93LC46RFJ-W

BR93LC46F-W

BR93LC46FJ-W

BR93LC46FV-W

13CS
24SK
35DI
46DO
5 7 GND
6 8 N.C.
7 1 N.C.
82V

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Absolute maximum ratings

(T a = 2 5°C)

Parameter

Applied voltage

BR93LC46-W

Power
dissipation

BR93LC46FV-W

Storage temperature
Operating temperature
Terminal voltage

∗1 Reduced by 5.0mW for each increase in Ta of 1°C over 25°C.
∗2 Reduced by 3.5mW for each increase in Ta of 1°C over 25°C.
∗3 Reduced by 3.0mW for each increase in Ta of 1°C over 25°C.

CC

N.C.

V

1

CC

2

BR93LC46F-W

N.C.

8

GND

7

BR93LC46FJ-W
BR93LC46FV-W

Pin

name

3

CS

4

SK

Fig.2

Function

6

DO

5

DI

Chip select input
Serial clock input
Start bit, operating code, address, and seria data input
Serial data output, READY / BUSY internal status display output
Ground
Not connected
Not connected

CC

Power supply

Symbol

V

CC

Pd

Tstg
Topr

−

Limits Unit

−0.3~+6.5

∗1

500

∗2

∗3

300

~+

125

−65

~+

85

−40

~

V

CC

+

−0.3

0.3

V

mWBR93LC46F-W / RF-W / FJ-W / RFJ-W 350

°C
°C

V

z

zRecommended operating conditions (T a = 25°C)

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Parameter Symbol Min. Typ. Max. Unit

Power supply

voltage

Input voltage

Writing
Reading

V

CC

V

IN

2.7

2.0 − 5.5 V
0 − V

− 5.5 V

CC

V

BR93LC46-W / BR93LC46F-W / BR93LC46RF-W /

Memory ICs

z

zElectrical characteristics

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For 5V operation (unless otherwise noted, Ta = −40 to + 85°C, V

Parameter

Input low level voltage
Input high level voltage
Output low level voltage 1
Output high level voltage 1
Output low level voltage 2
Output high level voltage 2
Input leakage current
Output leakage current

Operating current
dissipation 1

Operating current
dissipation 2

Standby current

For 3V operation (unless otherwise noted, Ta = −40 to + 85°C, VCC = 3.0V ± 10%)

Parameter Symbol Min. Typ. Max. Unit Conditions

Input low level voltage
Input high level voltage
Output low level voltage
Output high level voltage
Input leakage current
Output leakage current

Operating current
dissipation 1

Operating current
dissipation 2

Standby current

BR93LC46FJ-W / BR93LC46RFJ-W / BR93LC46FV-W

= 5.0V ± 10%)

CC

Symbol Min. Typ. Max. Unit Conditions

V

IL

−0.3 −

IH

V
V
V
V
V

I

I

I

CC1

I

CC2

I

V

IL

V

IH

OL

V
V

OH

I

LI

I

LO

I

CC1

CC2

I

I

SB

2.0

OL1

OH1

OL2

OH2

LI

LO

SB

−−

2.4

−−

VCC−0.4 −

−1.0 −µAVIN=0V~V

−1.0 −µAV

1.5 3.0 mA

−

0.7 1.5 mA

−

1.0 5.0

−

−0.3 −

0.7×V

CC

−

−−0.2 V IOL=10µA

VCC−0.4 −−VIOH=−10µA

−1.0 −µAVIN=0V~V

−1.0 −µA

− 0.5 2.0 mA

− 0.2 1.0 mA

0.4 3.0

−

0.8 V

−−

V

CC

0.4 V

−−

0.2 V

− V

V

+

0.3
IOL=2.1mA

V

OH

=−0.4mA

I
IOL=10µA
IOH=−10µA

1.0

1.0

OUT

=0V~VCC, CS=GND
VIN=VIH / VIL, DO=OPEN,
f=1MHz, WRITE
V

IN=VIH

/ VIL, DO=OPEN,

f=1MHz, READ

µACS=SK=DI=GND, DO=OPEN

0.15×V

CC

V

CC

+

0.3 V

1.0

1.0

OUT

=0V~VCC, CS=GND

V
V

IN=VIH

/ VIL, DO=OPEN

f=250kHz, WRITE
V

IN=VIH

/ VIL, DO=OPEN

f=250kHz, READ

µACS=SK=DI=GND, DO=OPEN

Measurement circuit

−

−

−

Fig.3
Fig.4
Fig.3
Fig.4

CC

Fig.5
Fig.6

Fig.7

Fig.7

Fig.8

Measurement circuit

−

−V

−

−

Fig.3
Fig.4

CC

Fig.5
Fig.6

Fig.7

Fig.7

Fig.8

For 2V operation (unless otherwise noted, Ta = −40 to + 85°C, VCC = 2.0V)

Parameter Symbol Min. Typ. Max. Unit Conditions

Input low level voltage
Input high level voltage
Output low level voltage
Output high level voltage
Input leakage current
Output leakage current

Operating current
dissipation 2

Standby current

V

IL

−0.3 −

V

IH

0.7×V

CC

V

OL

V

OH

I

LI

I

LO

I

CC2

SB

I

−−0.2 V IOL=10µA

VCC−0.4 −−VIOH=−10µA

−1.0 −µAVIN=0V~V

−1.0 −µA

− 0.2 1.0 mA

−

0.4

0.15×V

CC

−

CC

+

0.3 V

1.0

1.0

3.0

V

V
V

f=200kHz, READ

µA

CS=SK=DI=GND, DO=OPEN

−

−V

CC

OUT

=0V~VCC, CS=GND

IN=VIH

/ VIL, DO=OPEN

Measurement circuit

−

−

Fig.3
Fig.4
Fig.5
Fig.6

Fig.7

Fig.8

Memory ICs

z

zMeasurement circuits

zz

BR93LC46-W / BR93LC46F-W / BR93LC46RF-W /

BR93LC46FJ-W / BR93LC46RFJ-W / BR93LC46FV-W

V

V

GND

CC

CC

DO

VV

I

OL

OL

V

V

GND

CC

CC

DO

VV

I

OH

OH

VIN=0~V

SK

=1MHz / 250kHz / 200kHz

f
V

IN=VIH

/ V

IL

WRITE / READ INPUT

CS,SK,DI

CS

SK

DI

Control output to "LOW"

V

CC

A

V

CC

GND

Fig.3 "LOW" output voltage circuit

I

LI

A

CC

Fig.5 Input leak current circuit

Fig.7 Supply current circuit

V

V

GND

CC

CC

I

CC

DO OPEN

Control output to "HIGH"

Fig.4 "HIGH" output voltage circuit

V

CC

V

CC

GND

Fig.6 Output leak current circuit

Vcc

A

Vcc

CS

SK

DI

GND

Fig.8 Standby current circuit

I

LO

DOCS

A

SB

I

DO

OPEN

VO=0~V

CC

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Circuit operation

(1) Command mode
With these ICs, commands are not recognized or acted upon until the start bit is received. The start bit is taken as
the first “1” that is received after the CS pin rises.

Start

Command

Read (READ)

∗1

Write enabled (WEN)
Write (WRITE)
Write all addresses (WRAL)

∗2

∗2

Write disabled (WDS)
Erase (ERASE)
Chip erase (ERAL)

X: Either VIH or V
∗1 After setting of the read command and input of the SK clock, data corresponding to the specified address is output,

with data corresponding to upper addresses then output in se-quence. (Auto increment function)
∗2 When the write or write all addresses command is executed, all data in the selected memory cell is erased
autematically, and the input data is writen to the cell.

∗3 These modes are optinal modes. Please contact Rohm for information on operation timing.

∗3

∗3

IL

Operating

bit

110
100
1 01 D15
1 00 D15
100
111
100

code

Address Data

A5~A0
11XXXX

−

−

A5~A0
01XXXX
00XXXX
A5~A0
10XXXX

−

−

−

~

D0

~

D0