ROHM BR9080AF-W, BR9080ARFV-W, BR9080ARFVM-W Technical data

BR9080AF-W / BR9080ARFV-W / BR9080ARFVM-W /

Memory ICs

BR9016AF-W / BR9016ARFV-W / BR9016ARFVM-W

8k, 16k bit EEPROMs for direct connection to serial ports
BR9080AF-W / BR9080ARFV-W / BR9080ARFVM-W / BR9016AF-W / BR9016ARFV-W / BR9016ARFVM-W
The BR9080A and BR9016A series are serial EEPROMs that can be connected directly to a serial port and can be erased and written electrically. Writing and reading is performed in word units, using four types of operation commands. Communication occurs though CS, SK, DI, and DO pins, WC pin control is used to initiate a write disabled state, enabling these EEPROMs to be used as one-time ROMs. During writing, operation is checked via the internal status check.
!Applications Movie, camera, cordless telephones, car stereos, VCRs, TVs, DIP switches, and other battery-powered equipment requiring low voltage and low current
!Features
1) BR9080AF-W / ARFV-W / ARFVM-W (8k bit) : 512 words ×16 bits BR9016AF-W / ARFV-W / ARFVM-W (16k bit) : 1024 words × 16bits
2) Single power supply operation
3) Serial data input and output
4) Automatic erase-before-write
5) Low current consumption Active (5V) : 5mA (max.) Standby (5V) : 3µA (ma x.)
6) Noise filter built into SK pin
7) Write protection when V Inhibition on inadvertant write with the WC pin.
8) SOP8 / SSOP-B8 / MSOP8
9) High reliability CMOS process
10) 100,000 ERASE / WRITE cycles
11) 10 years Data Retention
CC is low
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Memory ICs
!!!!Block diagram
BR9080AF-W / BR9080ARFV-W / BR9080ARFVM-W /
BR9016AF-W / BR9016ARFV-W / BR9016ARFVM-W
CS
SK
DI
DO
!!!!Pin descriptions
INSTRUCTION DECODE
CONTROL
CLOCK GENERATION
CC
R / B WC GND
V
INSTRACTION REGISTER
ADD BUFFER
DATA REGISTER
WC GND DO DI
9bit
16bit
DETECT SUPPLY VOLTAGE
WRITE DISABLE
ADD DECORDER
R / W AMPS
HIGH VOLTAGE GENERATOR
9bit
16bit
V
CC
R / B
WC
8,192 bit
EEPROM
BR9016A is 10bit, 16,384bit
BR9080A is 9bit, 8,192bit
GND
R / B WC
MSOP / SSOP
1 2 3 4 5 6 7 8
CS SK
BR9080ARFVM BR9016ARFVM
Pin No.
SOP
3 4 5 6 7 8 1 2
DI
: MSOP8
DO
Pin name
CS SK
DI
DO
GND
WC
R / B
CC
V
CS SKR / B V
CC
BR9080AF BR9016AF
: SOP8
BR9080ARFV BR9016ARFV
Fig.1
Function
Chip Select Control Serial Data Clock Input
Op code, address, Serial Data Input Serial Data Output Ground 0V Write Control Input READY / BUSY Output Power supply
CS SK
DI
DO
: SSOP-B8
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BR9080AF-W / BR9080ARFV-W / BR9080ARFVM-W /
Memory ICs
!!!!Absolute maximum ratings (Ta=25°C)
Supply voltage
Power dissipation
Storage temperature Operation temperature Input voltage
1 Reduced by 4.5mW for each increase in Ta of 1°C over 25°C.
2
Reduced by 3.0mW for each increase in Ta of 1°C over 25°C.
3
Reduced by 3.1mW for each increase in Ta of 1°C over 25°C.
!!!!Recommended operating conditions (Ta=25°C)
Power supply voltage
Input voltage
BR9016AF-W / BR9016ARFV-W / BR9016ARFVM-W
Parameter Symbol Limits Unit
V
CC
SOP8
Pd
Tstg Topr
−−0.3V
Parameter Symbol
WRITE
READ
V
V
SSOP-B8
MSOP8
Min.
CC
IN
0.3∼+7.0 V
1
450
2
300
3
310
65∼+125 °C
40∼+85 °C
CC
+0.3 V
Typ. Max. Unit
2.7
2.7 0
5.5 V
5.5 V
V
CC
mW
V
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BR9080AF-W / BR9080ARFV-W / BR9080ARFVM-W /
Memory ICs
!!!!Electrical characteristics BR9080AF-W / ARFV-W / ARFVM-W, BR9016AF-W / ARFV-W / ARFVM-W : 5V (Unless otherwise noted, Ta=−40∼85°C, V
Parameter Symbol Min. Typ. Max. Unit Conditions
Input low level voltage 1 Input high level voltage 1 Input low level voltage 2 Input high level voltage 2 Output low level voltage Output high level voltage Input leak current Output leak current
Operating current
Standby current SK frequency
BR9080AF-W / ARFV-W / ARFVM-W, BR9016AF-W / ARFV-W / ARFVM-W : 3V (Unless otherwise noted, Ta=−40∼85°C, V
Parameter Symbol Min. Typ. Max. Unit Conditions
Input low level voltage 1 Input high level voltage 1 Input low level voltage 2 Input high level voltage 2 Output low level voltage Output high level voltage Input leak current Output leak current
Operating current
Standby current SK frequency
Not designed for radiation resistance
BR9016AF-W / BR9016ARFV-W / BR9016ARFVM-W
CC=2.7V5.5V)
DI pin
V V
DI pin
V
CS, SK, WC pin
V
CS, SK, WC pin
V
OL
=2.1mA
I
V
IOH=0.4mA
µA
IN
=0VV
V
µA
V f
SK
mA mA
SK
f
µA
CS / SK / DI / WC=VCC DO, R / B=OPEN
CC
OUT
=0VVCC, CS=V =2MHz tE / W=10ms (WRITE) =2MHz (READ)
MHz
DI pin
V V
DI pin
V
CS, SK, WC pin
V
CS, SK, WC pin
V
OL
=100µA
I
V
IOH=100µA
µA
IN
=0VV
V
µA
V f
SK
mA mA
SK
f
µA
CS / SK / DI / WC=VCC DO, R / B=OPEN
CC
OUT
=0VVCC, CS=V =2MHz tE / W=10ms (WRITE) =2MHz (READ)
MHz
V V V V V V
I I
V V V V V V
I I
I
I
CC1
CC2
I f
I
I
CC1
CC2
I f
IL1
IH1
IL2
IH2
OL
OH
LI
LO
SB
SK
IL1
IH1
IL2
IH2
OL
OH
LI
LO
SB
SK
−−
0.7×V
CC
0.8×V
CC
0
VCC−0.4
1
1
CC=2.7V∼3.3V)
−−
0.7×V
CC
0.8×V
CC
0
VCC−0.4
1
1
CC
0.3×V
0.2×V
CC
0.4
V
CC
1
1
5
3
3 2
CC
0.3×V
0.2×V
CC
0.4
V
CC
1
1
3
0.75
2 2
CC
CC
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