ROHM BR9040F, BR9040, BR9020F, BR9020, BR9010FV Datasheet

...
1
Memory ICs
1, 2, and 4k bit EEPROMs for direct connection to serial ports
BR9010 / BR9010F / BR9010FV / BR9020 / BR9020F / BR9040 / BR9040F
Overview The BR90 series are serial EEPROMs that can be connected directly to a serial port and can be erased and written electrically. Writing and reading is performed in word units, using four types of operation commands. Communication occurs through CS, SK, DI, and DO pins, WC pin control is used to initiate a write disabled state, enabling these EEPROMs to be used as one-time ROMs. During writing, operation is checked via the internal status check.
Features
•BR9010 / F / FV (1k bit): 64 words × 16 bits BR9020 / F (2k bit): 128 words × 16 bits BR9040 / F (4k bit): 256 words × 16 bits
•Single power supply operation
•Serial data input and output
•Automatic erase-before-write
•Low current consumption –1.5mA (max.) active current: 3V –2µA (max.) standby current: 3V
•Noise filter built into SK pin
• Compact DIP8, SOP8, SSOP-B8 packages (SSOP­B8 is available only with BR9010).
•100,000 ERASE / WRITE cycles
•10 years Data Retention
•Easily connects to serial port
Pin assignments
1
2
3
4
8
7
6
5
CS
SK
DI
DO
V
CC
R / B
WC
GND
BR9010 / BR9020 / 9040
1
2
3
4
8
7
6
5
R / B
VCC
CS
SK
WC
GND
DO
DI
BR9010F / BR9010FV / BR9020F / BR9040F
Pin description
CS SK
DI
DO
GND
WC
V
CC
R /
B
Function
Chip select input Serial data clock input
Operating code, address, and serial data input Serial data output Reference voltage for all I / O, 0V Write control input READY, BUSY status signal output Power supply connection
Pin
name
This pin is N.C. (non connection) on BR9010.
2
Memory ICs
BR9010 / BR9010F / BR9010FV / BR9020 / BR9020F / BR9040 / BR9040F
Block diagram
Command decode
Control
Clock generation
High voltage
generator
Write
disable
Address
buffer
Data
register
Command
register
Address decoder
R / W
amplifier
1024bit
EEPROM
array
16bit
16bit
6bit
CS
SK
DI
DO
WC
6bit
Power supply
voltage detector
7 (8)
bit
2,048
(
4,096) bit
EEPROM
array
16bit
16bit
7 (8)
bit
CS
SK
DI
DO
WC
R / B
Values in parentheses are for the BR9040 / F.
Command decode
Control
Clock generation
Power supply
voltage detector
Write
disable
High voltage
generator
Address decoder
R / W
amplifier
Address
buffer
Data
register
Command
register
BR9010 / F / FV
BR9020 / F, BR9040 / F
3
Memory ICs
BR9010 / BR9010F / BR9010FV / BR9020 / BR9020F / BR9040 / BR9040F
Absolute maximum ratings (Ta = 25°C)
Parameter Symbol Limits Unit
Applied voltage
Power dissipation
Storage temperature Operation temperature Input voltage
V
CC
Pd
Tstg Topr
– 0.3 ~ + 7.0
– 65 ~ + 125
– 40 ~ + 85
V
mW
°C °C
V
Reduced by 5.0mw
1
/ 3.5mw
2
/ 3.0mw
3
for each increase in Ta of 1°C over 25°C.
DIP8 SOP8 SSOP-B8
500
1
350
2
300
3
– 0.3 ~ VCC + 0.3
Recommended operating conditions
Parameter Symbol UnitLimits
Power supply voltage
Input voltage
V
CC
VIN
2.7 to 5.5 (write)
2.0 to 5.5 (read) 0 ~ V
CC
V V V
4
Memory ICs
BR9010 / BR9010F / BR9010FV / BR9020 / BR9020F / BR9040 / BR9040F
Electrical characteristics
BR9010 / F / FV: At 5V (unless otherwise noted, Ta = – 40 to + 85°C, V
CC = 5V ± 10%)
Parameter
Symbol Min. Typ. Max. Unit Conditions
Input low level voltage 1
Input high level voltage 1
Input low level voltage 2
Input high level voltage 2
Output low level voltage Output high level voltage
Input leak current Output leak current Consumption current
during operation Standby current
SK frequency
V
IL1
VIH1
VIL2
VIH2
VOL VOH
ILI
ILO ICC1 ICC2
ISB
fSK
0.7 × V
CC
0.8 × V
CC
0
V
CC
0.4
— — —
— —
— — — — —
0.3 × V
CC
0.2 × V
CC
0.4
V
CC
1 1 2 1 3 1
V
V
V
V
V V
µA µA
mA mA
µA
MHz
DI Pin
DI Pin
CS, SK, WC Pin
CS, SK, WC Pin
I
OL = 2.1mA
I
OH = – 0.4mA
V
IN = 0V ~ VCC
V
OUT = 0V ~ VCC CS = VCC
f = 1MHz tE / W = 10ms (WRITE) f = 1MHz (READ) CS, SK, DI, WC, = V
CC DO = OPEN
– 1 – 1
BR9010 / F / FV: At 3V (unless otherwise noted, Ta = – 40 to + 85°C, VCC = 3V ± 10%)
Parameter
Symbol Min. Typ. Max. Unit Conditions
Input low level voltage 1
Input high level voltage 1
Input low level voltage 2
Input high level voltage 2
Output low level voltage Output high level voltage
Input leak current Output leak current
Standby current SK frequency
V
IL1
VIH1
VIL2
VIH2
VOL
VOH
ILI
ILO ICC1 ICC2
ISB
fSK
0.7 × V
CC
0.8 × V
CC
0
V
CC
0.4
— — —
— —
— — — — —
0.3 × V
CC
0.2 × V
CC
0.4
V
CC
1 1
1.5
500
2 1
V
V
V
V
V V
µA µA
mA
µA µA
MHz
DI Pin
DI Pin
CS, SK, WC Pin
CS, SK, WC Pin
I
OL = 100µA
I
OH = – 100µA
V
IN = 0 ~ VCC
V
OUT = 0 ~ VCC CS = VCC
f = 1MHz tE / W = 15ms (WRITE) f = 1MHz (READ) CS, SK, DI, WC, = V
CC DO = OPEN
Not designed for radiation resistance
–1 –1
Consumption current during operation
5
Memory ICs
BR9010 / BR9010F / BR9010FV / BR9020 / BR9020F / BR9040 / BR9040F
Electrical characteristics
BR9020 / F: At 5V (unless otherwise noted, Ta = – 40 to + 85°C, VCC = 5V ± 10%)
Parameter
Symbol Min. Typ. Max. Unit Conditions Input low level voltage 1 Input high level voltage 1 Input low level voltage 2 Input high level voltage 2 Output low level voltage Output high level voltage Input leak current Output leak current
Standby current SK frequency
V
IL1
VIH1 VIL2 VIH2 VOL VOH
ILI
ILO ICC1 ICC2
ISB
fSK
0.7 × V
CC
0.8 × V
CC
0
V
CC – 0.4
— — — —
— — — — — — — — — — — —
0.3 × V
CC
0.2 × V
CC
0.4
V
CC
1 1 2 1 3 1
V V V V V V
µA µA
mA mA µA
MHz
DI Pin DI Pin CS, SK, WC Pin CS, SK, WC Pin I
OL = 2.1mA
I
OH = – 0.4mA
V
IN = 0V ~ VCC
V
OUT = 0V ~ VCC CS = VCC
fSK = 1MHz tE / W = 10ms (WRITE) f
SK = 1MHz (READ)
CS, SK, DI, WC, = V
CC DO, R / B = OPEN
– 1 – 1
Consumption current during operation
BR9020 / F: At 3V (unless otherwise noted, Ta = – 40 to + 85°C, VCC = 3V ± 10%)
Parameter
Symbol Min. Typ. Max. Unit Conditions Input low level voltage 1 Input high level voltage 1 Input low level voltage 2 Input high level voltage 2 Output low level voltage Output high level voltage Input leak current Output leak current
Standby current SK frequency
V
IL1
VIH1 VIL2 VIH2
VOL
VOH
ILI
ILO ICC1 ICC2
ISB
fSK
0.7 × V
CC
0.8 × V
CC
0
V
CC – 0.4
— — — —
— — — — — — — — — — — —
0.3 × V
CC
0.2 × V
CC
0.4
V
CC
1 1
1.5
500
2 1
V V V V V V
µA µA
mA
µA µA
MHz
DI Pin DI Pin CS, SK, WC Pin CS, SK, WC Pin I
OL = 100µA
I
OH = – 100µA
V
IN = 0V ~ VCC
V
OUT = 0V ~ VCC CS = VCC
fSK = 1MHz tE / W = 15ms (WRITE) f
SK = 1MHz (READ)
CS, SK, DI, WC, = V
CC DO, R / B = OPEN
– 1 – 1
Consumption current during operation
6
Memory ICs
BR9010 / BR9010F / BR9010FV / BR9020 / BR9020F / BR9040 / BR9040F
Electrical characteristics
BR9040 / F: At 5V (unless otherwise noted, Ta = – 40 to + 85°C, VCC = 5V ± 10%)
Parameter
Symbol Min. Typ. Max. Unit Conditions Input low level voltage 1 Input high level voltage 1 Input low level voltage 2 Input high level voltage 2 Output low level voltage Output high level voltage Input leak current Output leak current
Standby current SK frequency
V
IL1
VIH1 VIL2 VIH2 VOL VOH
ILI
ILO ICC1 ICC2
ISB
fSK
0.7 × V
CC
0.8 × V
CC
0
V
CC – 0.4
— — — —
— — — — — — — — — — — —
0.3 × V
CC
0.2 × V
CC
0.4
V
CC
1 1 2 1 3 1
V V V V V V
µA µA
mA mA µA
MHz
DI Pin DI Pin CS, SK, WC Pin CS, SK, WC Pin I
OL = 2.1mA
I
OH = – 0.4mA
V
IN = 0V ~ VCC
V
OUT = 0V ~ VCC CS = VCC
fSK = 1MHz tE / W = 10ms (WRITE) f
SK = 1MHz (READ)
CS, SK, DI, WC, = V
CC DO, R / B = OPEN
– 1 – 1
Consumption current during operation
BR9040 / F: At 3V (unless otherwise noted, Ta = – 40 to + 85°C, VCC = 3V ± 10%)
Parameter
Symbol Min. Typ. Max. Unit Conditions Input low level voltage 1 Input high level voltage 1 Input low level voltage 2 Input high level voltage 2 Output low level voltage Output high level voltage Input leak current Output leak current
Standby current
SK frequency
V
IL1
VIH1 VIL2 VIH2 VOL VOH
ILI
ILO ICC1 ICC2
ISB
fSK
0.7 × V
CC
0.8 × V
CC
0
V
CC – 0.4
— — — — —
— — — — — — — — — — — — —
0.3 × V
CC
0.2 × V
CC
0.4
V
CC
1 1
1.5
500
2 1
750
V V V V V V
µA µA
mA
µA µA
MHz
kHz
DI Pin DI Pin CS, SK, WC Pin CS, SK, WC Pin I
OL = 100µA
I
OH = – 100µA
V
IN = 0V ~ VCC
V
OUT = 0V ~ VCC CS = VCC
fSK = 1MHz tE / W = 15ms (WRITE) f
SK = 1MHz (READ)
CS, SK, DI, WC, = V
CC DO, R / B = OPEN
V
CC = 3.0 ~ 3.3V
V
CC = 2.7 ~ 3.0V
– 1 – 1
Consumption current during operation
Loading...
+ 11 hidden pages