ROHM BR25H010F-W Technical data

t

Datashee

Automotive Series Serial EEPROMs

125℃ SPI BUS ICs BR25xxxxFamily

BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)

●Description

BR25Hxxx-WC series is a serial EEPROM of SPI BUS interface method.

●Features

 High speed clock action up to 5MHz (Max.)  Wait function by HOLDB terminal.  Part or whole of memory arrays settable as read only

memory area by program.

 2.5 to 5.5V single power source action most suitable

for battery use.

 Page write mode useful for initial value write at

factory shipment.

 Highly reliable connection by Au pad and Au wire.  For SPI bus interface (CPOL, CPHA)=(0, 0), (1, 1)  Auto erase and auto end function at data rewrite.  Low current consumption

¾ At write action (5V) : 1.5mA (Typ.) ¾ At read action (5V) : 1.0mA (Typ.)

¾ At standby action (5V) : 0.1μA (Typ.)  Address auto increment function at read action  Write mistake prevention function

¾ Write prohibition at power on.

¾ Write prohibition by command code (WRDI).

¾ Write prohibition by WPB pin.

¾ Write prohibition block setting by status

registers (BP1, BP0) ¾ Write mistake prevention function at low voltage.

 Data at shipment Memory array: FFh, status register

WPEN, BP1, BP0 : 0

 Data kept for 40 years.  Data rewrite up to 1,000,000times.

●Page write

Number of pages 16 Byte 32 Byte

●Packages W(Typ.) x D(Typ.) x H(Max)

5.00mm x 6.20mm x 1.71mm

4.90mm x 6.00mm x 1.65mm

3.00mm x 6.40mm x 1.20mm

SOP8

SOP-J8

TSSOP-B8

BR25H010-WC

Product number

●BR25Hxxx-WC series

Capacity Bit format Type Power source voltage SOP8 SOP-J8 TSSOP-B8

1Kbit 128×8 BR25H010-WC 2.5 to 5.5V ● ● ● 2Kbit 256×8 BR25H020-WC 2.5 to 5.5V ● ● ● 4Kbit 512×8 BR25H040-WC 2.5 to 5.5V ● ● ●

8Kbit 1K×8 BR25H080-WC 2.5 to 5.5V ● ● ● 16Kbit 2K×8 BR25H160-WC 2.5 to 5.5V ● ● ● 32Kbit 4Kx8 BR25H320-WC 2.5 to 5.5V ● ●

○Product structure：Silicon monolithic integrated circuit ○This product is not designed protection against radioactive rays .

BR25H020-WC BR25H040-WC

BR25H080-WC BR25H160-WC BR25H320-WC

1/28

TSZ02201-0R1R0G100060-1-2

23.May.2012 Rev.001

Datasheet

BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)

Datasheet

●Absolute Maximum Ratings (Ta=25°C)

Parameter Symbol Limits Unit Remarks

Impressed voltage VCC -0.3 to +6.5 V

Permissible dissipation

Pd

560(SOP8)

560(SOP-J8) When using at Ta=25℃ or higher, 4.5mW to be reduced per 1℃

When using at Ta=25℃ or higher, 4.5mW to be reduced per 1℃

mW

410(TSSOP-B8) When using at Ta=25℃ or higher, 3.3mW to be reduced per 1℃

Storage temperature range Tstg -65 to +150 °C

Operating temperature range Topr -40 to +125 °C

Terminal voltage - -0.3 to VCC+0.3 V

●Memory Cell Characteristics (V

Parameter

=2.5V to 5.5V)

CC

Limits

Min. Typ. Max.

Unit Condition

1,000,000 - - Times Ta≦85°C

Number of data rewrite times *1

500,000 - - Times

Ta ≦105°C

300,000 - - Times Ta≦125°C

Data hold years*1

*1: Not 100% TESTED

40 - - Years Ta≦25°C

≦125°C

20 - - Years

Ta

●Recommended Operating Ratings

Parameter Symbol Limits Unit

Power source voltage VCC 2.5 to 5.5

Input voltage VIN 0 to VCC

V

●Input / Output Capacity (Ta=25°C, frequency=5MHz)

Parameter Symbol Min Max Unit Conditions

Input capacity*1 C

Output capacity*1 C

*1: Not 100% TESTED

- 8

IN

- 8 V

OUT

pF

VIN=GND

=GND

OUT

●Electrical Characteristics(Unless otherwise specified, Ta=-40°C to +125°C, VCC=2.5V to 5.5V)

Parameter

Symbol

Min. Typ. Max.

“H” input voltage VIH 0.7xV

“L” input voltage VIL -0.3 - 0.3xV

Limits

- VCC+0.3 V 2.5V≦V

CC

Unit

V 2.5V≦V

≦5.5V

CC

≦5.5V

CC

Conditions

“L” output voltage VOL 0 - 0.4 V IOL=2.1mA

“H” output voltage VOH VCC-0.5 - VCC V IOH=-0.4mA

Input leak current ILI -10 - 10 μA V

Output leak current ILO -10 - 10 μA V

ICC1 - - 2.0 mA Current consumption at write action

ICC2 - - 3.0 mA

ICC3 - - 1.5 mA Current consumption at read action

ICC4 - - 2.0 mA

Standby current ISB - - 10 μA

=0 to VCC

IN

=0 to VCC, CSB=VCC

OUT

VCC=2.5V,fSCK=5MHz, tE/W=5ms VIH/VIL=0.9V Byte write, Page write Write status register VCC=5.5V,fSCK=5MHz, tE/W=5ms VIH/VIL=0.9V Byte write, Page write Write status register VCC=2.5V,fSCK=5MHz VIH/VIL=0.9V Read, Read status register VCC=5.5V,fSCK=5MHz VIH/VIL=0.9V Read, Read status register VCC=5.5V CSB=HOLDB=WPB=V SO=OPEN

/0.1VCC, SO=OPEN

CC

/0.1VCC, SO=OPEN

CC

/0.1VCC, SO=OPEN

CC

/0.1VCC, SO=OPEN

CC

, SCK=SI=VCC or =GND,

CC

2/28

TSZ02201-0R1R0G100060-1-2

23.May.2012 Rev.001

Datasheet

BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)

g

Datasheet

●Operating Timing Characteristics

(Ta=-40°C to +125°C, unless otherwise specified, load capacity CL1=100pF)

Parameter

Symbol

Min. Typ. Max.

2.5≦V

≦5.5V

CC

Unit

SCK frequency fSCK - - 5 MHz

SCK high time tSCKWH 85 - - ns

SCK low time tSCKWL 85 - - ns

CSB high time tCS 85 - - ns

CSB setup time tCSS 90 - - ns

CSB hold time tCSH 85 - - ns

SCK setup time tSCKS 90 - - ns

SCK hold time tSCKH 90 - - ns

SI setup time tDIS 20 - - ns

SI hold time tDIH 30 - - ns

Data output delay time1 tPD1 - - 0 ns

Data output delay time2 (CL2=30pF)

tPD2 - - 55 ns

Output hold time tOH 0 - - ns

Output disable time tOZ - - 100 ns

HOLDB setting setup time tHFS 0 - - ns

HOLDB setting hold time tHFH 40 - - ns

HOLDB release setup time tHRS 0 - - ns

HOLDB release old time tHH 70 - - ns

Time from HOLDB to output High-Z tHOZ - - 100 ns

Time from HOLDB To output change tHPD - - 70 ns

SCK rise time*1 tRC - - 1 μs

SCK fall time*1 tFC - - 1 μs

OUTPUT rise time*1 tRO - - 50 ns

OUTPUT fall time*1 tFO - - 50 ns

Write time tE/W - - 5 ms

*1 NOT 100% TESTED

●Sync Data Input / Output Timing

CSB

SCK

SI

SO

tCS

tSCKS

tCSS

tSCKWL

High-Z

Fig.1 Input timing

tDIS

tSCKWH

tDIH

tRC

tFC

SI is taken into IC inside in sync with data rise edge of SCK. Input address and data from the most significant bit MSB.

CSB

SCK

SI

SO

tPD

tOH

tCSH

tRO,tFO

tSCKH

tOZ

tCS

Hi

Fig.2 Input / Output timing

SO is output in sync with data fall edge of SCK. Data is output from the most significant bit MSB.

h-Z

CSB

SCK

SI

SO

HOLDB

"H"

"L"

n+1

Dn+1

tHFS tHFH

tHOZ

Dn

High-Z

tHRS tHRH

tHPD

tDIS

n

Dn

n-1

Dn-1

Fig.3 HOLD timing

●AC Measurement Conditions

Parameter Symbol

Limits

Min. Typ. Max.

Unit

Load capacity 1 CL1 - - 100 pF

Load capacity 2 CL2 - - 30 pF

Input rise time - - - 50 ns

Input fall time - - - 50 ns

Input voltage - 0.2VCC/0.8VCC V Input / Output

judgment voltage

- 0.3V

/0.7VCC V

CC

3/28

TSZ02201-0R1R0G100060-1-2

23.May.2012 Rev.001

Datasheet

BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)

●Block Diagram

CSB

SCK

●Pin Configuration

●Pin Description

SI

HOLDB

WPB

SO

Terminal name Input/Output Function

VCC - Power source to be connected

GND - All input / output reference voltage, 0V

CSB Input Chip select input

SCK Input Serial clock input

SI Input Start bit, ope code, address, and serial data input

SO Output Serial data output

HOLDB Input

WPB Input

*1:BR25H010/020/040-WC

INSTRUCTION DECODE

CONTROL CLOCK

GENERATION

INSTRUCTION

REGISTER

Fig.4 Block diagram

Vcc HOLDB SCK SI

BR25H010-WC BR25H020-WC BR25H040-WC BR25H080-WC BR25H160-WC BR25H320-WC

CSB SO WPB GND

Fig.5 Pin configuration

Hold input Command communications may be suspended temporarily (HOLD status) Write protect input Write command is prohibited *1 Write status register command is prohibited.

WRITE

INHIBITION

ADDRESS

REGISTER

DATA

REGISTER

VOLTAGE

DETECTION

7～12bit *1

8bit

HIGH VOLTAGE

GENERATOR

ADDRESS

DECODER

READ/WRITE

AMP

Datasheet

*1 7bit: BR25H010-WC

8bit: BR25H020-WC 9bit: BR25H040-WC 10bit: BR25H080-WC 11bit: BR25H160-WC 12bit: BR25H320-WC

STATUS REGISTER

7～12bit *1

1～32K

EEPROM

8bit

4/28

TSZ02201-0R1R0G100060-1-2

23.May.2012 Rev.001

Datasheet

BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)

●Typical Performance Curves

Fig.6 “H” input voltage VIH (CSB,SCK,SI,HOLDB,WPB)

Fig.7 “L” input voltage VIL (CSB,SCK,SI,HOLDB,WPB)

Datasheet

Fig.8 “L” output voltage VOL-IOL (Vcc=2.5V)

5/28

Fig.9 "H" output voltage VOH-IOH (Vcc=2.5V)

TSZ02201-0R1R0G100060-1-2

23.May.2012 Rev.001

Datasheet

BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)

●Typical Performance Curves - continued

Fig.10 Input leak current ILI (CSB,SCK,SI,HOLDB,WPB)

Fig.12 Current consumption at WRITE operation

ICC1,2

Fig.11 Output leak current ILO (SO)(Vcc=5.5V)

Fig.13 Consumption Current at READ operation

ICC3,4

Datasheet

6/28

TSZ02201-0R1R0G100060-1-2

23.May.2012 Rev.001

Datasheet

BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)

●Typical Performance Curves - continued

Fig.14 Consumption current at standby operation ISB

Fig.16 SCK high time tSCKWH

Datasheet

Fig.15 SCK frequency fSCK

Fig.17 SCK low time tSCKWL

7/28

TSZ02201-0R1R0G100060-1-2

23.May.2012 Rev.001

Datasheet

BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)

●Typical Performance Curves - continued

Fig.18 CSB high time tCS

Fig.20 CSB hold time tCSH

Datasheet

Fig.19 CSB setup time tCSS

Fig.21 SI setup time tDIS

8/28

TSZ02201-0R1R0G100060-1-2

23.May.2012 Rev.001

Datasheet

BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)

●Typical Performance Curves - continued

Fig.24 Data output delay time tPD2 (CL-30pF)

Fig.22 SI hold time tDIH

Fig.23 Data output delay time tPD1 (CL=100pF)

Fig.25 Output disable time tOZ

Datasheet

9/28

TSZ02201-0R1R0G100060-1-2

23.May.2012 Rev.001

Datasheet

BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)

●Typical Performance Curves - continued

Fig.26 HOLDB setting hold time tHFH

Fig.28 Time from HOLDB to output High-Z tHOZ

Datasheet

Fig.27 HOLDB release hold time tHRH

Fig.29 Time from HOLDB to output change tHPD

10/28

TSZ02201-0R1R0G100060-1-2

23.May.2012 Rev.001