ROHM BR25H010F-W Technical data

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Automotive Series Serial EEPROMs

125℃ SPI BUS ICs BR25xxxxFamily

BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)

●Description

BR25Hxxx-WC series is a serial EEPROM of SPI BUS interface method.

●Features

 High speed clock action up to 5MHz (Max.)  Wait function by HOLDB terminal.  Part or whole of memory arrays settable as read only

memory area by program.

 2.5 to 5.5V single power source action most suitable

for battery use.

 Page write mode useful for initial value write at

factory shipment.

 Highly reliable connection by Au pad and Au wire.  For SPI bus interface (CPOL, CPHA)=(0, 0), (1, 1)  Auto erase and auto end function at data rewrite.  Low current consumption

¾ At write action (5V) : 1.5mA (Typ.) ¾ At read action (5V) : 1.0mA (Typ.)

¾ At standby action (5V) : 0.1μA (Typ.)  Address auto increment function at read action  Write mistake prevention function

¾ Write prohibition at power on.

¾ Write prohibition by command code (WRDI).

¾ Write prohibition by WPB pin.

¾ Write prohibition block setting by status

registers (BP1, BP0) ¾ Write mistake prevention function at low voltage.

 Data at shipment Memory array: FFh, status register

WPEN, BP1, BP0 : 0

 Data kept for 40 years.  Data rewrite up to 1,000,000times.

●Page write

Number of pages 16 Byte 32 Byte

●Packages W(Typ.) x D(Typ.) x H(Max)

5.00mm x 6.20mm x 1.71mm

4.90mm x 6.00mm x 1.65mm

3.00mm x 6.40mm x 1.20mm

SOP8

SOP-J8

TSSOP-B8

BR25H010-WC

Product number

●BR25Hxxx-WC series

Capacity Bit format Type Power source voltage SOP8 SOP-J8 TSSOP-B8

1Kbit 128×8 BR25H010-WC 2.5 to 5.5V ● ● ● 2Kbit 256×8 BR25H020-WC 2.5 to 5.5V ● ● ● 4Kbit 512×8 BR25H040-WC 2.5 to 5.5V ● ● ●

8Kbit 1K×8 BR25H080-WC 2.5 to 5.5V ● ● ● 16Kbit 2K×8 BR25H160-WC 2.5 to 5.5V ● ● ● 32Kbit 4Kx8 BR25H320-WC 2.5 to 5.5V ● ●

○Product structure：Silicon monolithic integrated circuit ○This product is not designed protection against radioactive rays .

BR25H020-WC BR25H040-WC

BR25H080-WC BR25H160-WC BR25H320-WC

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Datasheet

BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)

Datasheet

●Absolute Maximum Ratings (Ta=25°C)

Parameter Symbol Limits Unit Remarks

Impressed voltage VCC -0.3 to +6.5 V

Permissible dissipation

560(SOP8)

560(SOP-J8) When using at Ta=25℃ or higher, 4.5mW to be reduced per 1℃

When using at Ta=25℃ or higher, 4.5mW to be reduced per 1℃

410(TSSOP-B8) When using at Ta=25℃ or higher, 3.3mW to be reduced per 1℃

Storage temperature range Tstg -65 to +150 °C

Operating temperature range Topr -40 to +125 °C

Terminal voltage - -0.3 to VCC+0.3 V

●Memory Cell Characteristics (V

Parameter

=2.5V to 5.5V)

Limits

Min. Typ. Max.

Unit Condition

1,000,000 - - Times Ta≦85°C

Number of data rewrite times *1

500,000 - - Times

Ta ≦105°C

300,000 - - Times Ta≦125°C

Data hold years*1

*1: Not 100% TESTED

40 - - Years Ta≦25°C

≦125°C

20 - - Years

●Recommended Operating Ratings

Parameter Symbol Limits Unit

Power source voltage VCC 2.5 to 5.5

Input voltage VIN 0 to VCC

●Input / Output Capacity (Ta=25°C, frequency=5MHz)

Parameter Symbol Min Max Unit Conditions

Input capacity*1 C

Output capacity*1 C

*1: Not 100% TESTED

- 8

- 8 V

OUT

VIN=GND

=GND

OUT

●Electrical Characteristics(Unless otherwise specified, Ta=-40°C to +125°C, VCC=2.5V to 5.5V)

Parameter

Symbol

Min. Typ. Max.

“H” input voltage VIH 0.7xV

“L” input voltage VIL -0.3 - 0.3xV

Limits

- VCC+0.3 V 2.5V≦V

Unit

V 2.5V≦V

≦5.5V

Conditions

“L” output voltage VOL 0 - 0.4 V IOL=2.1mA

“H” output voltage VOH VCC-0.5 - VCC V IOH=-0.4mA

Input leak current ILI -10 - 10 μA V

Output leak current ILO -10 - 10 μA V

ICC1 - - 2.0 mA Current consumption at write action

ICC2 - - 3.0 mA

ICC3 - - 1.5 mA Current consumption at read action

ICC4 - - 2.0 mA

Standby current ISB - - 10 μA

=0 to VCC

=0 to VCC, CSB=VCC

OUT

VCC=2.5V,fSCK=5MHz, tE/W=5ms VIH/VIL=0.9V Byte write, Page write Write status register VCC=5.5V,fSCK=5MHz, tE/W=5ms VIH/VIL=0.9V Byte write, Page write Write status register VCC=2.5V,fSCK=5MHz VIH/VIL=0.9V Read, Read status register VCC=5.5V,fSCK=5MHz VIH/VIL=0.9V Read, Read status register VCC=5.5V CSB=HOLDB=WPB=V SO=OPEN

/0.1VCC, SO=OPEN

, SCK=SI=VCC or =GND,

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Datasheet

BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)

Datasheet

●Operating Timing Characteristics

(Ta=-40°C to +125°C, unless otherwise specified, load capacity CL1=100pF)

Parameter

Symbol

Min. Typ. Max.

2.5≦V

≦5.5V

Unit

SCK frequency fSCK - - 5 MHz

SCK high time tSCKWH 85 - - ns

SCK low time tSCKWL 85 - - ns

CSB high time tCS 85 - - ns

CSB setup time tCSS 90 - - ns

CSB hold time tCSH 85 - - ns

SCK setup time tSCKS 90 - - ns

SCK hold time tSCKH 90 - - ns

SI setup time tDIS 20 - - ns

SI hold time tDIH 30 - - ns

Data output delay time1 tPD1 - - 0 ns

Data output delay time2 (CL2=30pF)

tPD2 - - 55 ns

Output hold time tOH 0 - - ns

Output disable time tOZ - - 100 ns

HOLDB setting setup time tHFS 0 - - ns

HOLDB setting hold time tHFH 40 - - ns

HOLDB release setup time tHRS 0 - - ns

HOLDB release old time tHH 70 - - ns

Time from HOLDB to output High-Z tHOZ - - 100 ns

Time from HOLDB To output change tHPD - - 70 ns

SCK rise time*1 tRC - - 1 μs

SCK fall time*1 tFC - - 1 μs

OUTPUT rise time*1 tRO - - 50 ns

OUTPUT fall time*1 tFO - - 50 ns

Write time tE/W - - 5 ms

*1 NOT 100% TESTED

●Sync Data Input / Output Timing

CSB

SCK

tCS

tSCKS

tCSS

tSCKWL

High-Z

Fig.1 Input timing

tDIS

tSCKWH

tDIH

tRC

tFC

SI is taken into IC inside in sync with data rise edge of SCK. Input address and data from the most significant bit MSB.

CSB

SCK

tPD

tOH

tCSH

tRO,tFO

tSCKH

tOZ

tCS

Fig.2 Input / Output timing

SO is output in sync with data fall edge of SCK. Data is output from the most significant bit MSB.

h-Z

CSB

SCK

HOLDB

"H"

"L"

n+1

Dn+1

tHFS tHFH

tHOZ

High-Z

tHRS tHRH

tHPD

tDIS

n-1

Dn-1

Fig.3 HOLD timing

●AC Measurement Conditions

Parameter Symbol

Limits

Min. Typ. Max.

Unit

Load capacity 1 CL1 - - 100 pF

Load capacity 2 CL2 - - 30 pF

Input rise time - - - 50 ns

Input fall time - - - 50 ns

Input voltage - 0.2VCC/0.8VCC V Input / Output

judgment voltage

- 0.3V

/0.7VCC V

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Datasheet

BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)

●Block Diagram

CSB

SCK

●Pin Configuration

●Pin Description

HOLDB

WPB

Terminal name Input/Output Function

VCC - Power source to be connected

GND - All input / output reference voltage, 0V

CSB Input Chip select input

SCK Input Serial clock input

SI Input Start bit, ope code, address, and serial data input

SO Output Serial data output

HOLDB Input

WPB Input

*1:BR25H010/020/040-WC

INSTRUCTION DECODE

CONTROL CLOCK

GENERATION

INSTRUCTION

Fig.4 Block diagram

Vcc HOLDB SCK SI

BR25H010-WC BR25H020-WC BR25H040-WC BR25H080-WC BR25H160-WC BR25H320-WC

CSB SO WPB GND

Fig.5 Pin configuration

Hold input Command communications may be suspended temporarily (HOLD status) Write protect input Write command is prohibited *1 Write status register command is prohibited.

WRITE

INHIBITION

ADDRESS

DATA

VOLTAGE

DETECTION

7～12bit *1

8bit

HIGH VOLTAGE

GENERATOR

ADDRESS

DECODER

READ/WRITE

AMP

Datasheet

*1 7bit: BR25H010-WC

8bit: BR25H020-WC 9bit: BR25H040-WC 10bit: BR25H080-WC 11bit: BR25H160-WC 12bit: BR25H320-WC

STATUS REGISTER

7～12bit *1

1～32K

EEPROM

8bit

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Datasheet

BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)

●Typical Performance Curves

Fig.6 “H” input voltage VIH (CSB,SCK,SI,HOLDB,WPB)

Fig.7 “L” input voltage VIL (CSB,SCK,SI,HOLDB,WPB)

Datasheet

Fig.8 “L” output voltage VOL-IOL (Vcc=2.5V)

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Fig.9 "H" output voltage VOH-IOH (Vcc=2.5V)

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Datasheet

BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)

●Typical Performance Curves - continued

Fig.10 Input leak current ILI (CSB,SCK,SI,HOLDB,WPB)

Fig.12 Current consumption at WRITE operation

ICC1,2

Fig.11 Output leak current ILO (SO)(Vcc=5.5V)

Fig.13 Consumption Current at READ operation

ICC3,4

Datasheet

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Datasheet

BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)

●Typical Performance Curves - continued

Fig.14 Consumption current at standby operation ISB

Fig.16 SCK high time tSCKWH

Datasheet

Fig.15 SCK frequency fSCK

Fig.17 SCK low time tSCKWL

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Datasheet

BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)

●Typical Performance Curves - continued

Fig.18 CSB high time tCS

Fig.20 CSB hold time tCSH

Datasheet

Fig.19 CSB setup time tCSS

Fig.21 SI setup time tDIS

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Datasheet

BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)

●Typical Performance Curves - continued

Fig.24 Data output delay time tPD2 (CL-30pF)

Fig.22 SI hold time tDIH

Fig.23 Data output delay time tPD1 (CL=100pF)

Fig.25 Output disable time tOZ

Datasheet

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Datasheet

BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)

●Typical Performance Curves - continued

Fig.26 HOLDB setting hold time tHFH

Fig.28 Time from HOLDB to output High-Z tHOZ

Datasheet

Fig.27 HOLDB release hold time tHRH

Fig.29 Time from HOLDB to output change tHPD

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Datasheet

BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)

●Typical Performance Curves - continued

Fig.30 Output rise time tRO

Fig.32 Write cycle time tE/W

Datasheet

Fig.31 Output fall time tFO

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Datasheet

BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)

●Features ○Status registers

This IC has status registers. The status registers are of 8 bits and express the following parameters. BP0 and BP1 can be set by write status register command. These 2 bits are memorized into the EEPROM, therefore are valid even when power source is turned off. Rewrite characteristics and data hold time are same as characteristics of the EEPROM. WEN can be set by write enable command and write disable command. WEN becomes write disable status when power source is turned off. R/B is for write confirmation, therefore cannot be set externally. The value of status register can be read by read status command.

●Status Registers

Product number bit 7 bit 6 bit 5 bit 4 bit 3 bit 2 bit 1 bit 0

BR25H010-WC

1 1 1 1 BP1 BP0 WEN R―/B BR25H020-WC

BR25H040-WC

BR25H080-WC

BR25H160-WC

BR25H320-WC

Memory

bit

location

WPEN EEPROM

BP1

EEPROM EEPROM write disable block designation bit

BP0

WEN Register

R―/B Register

●Write Disable Block Setting

BP1 BP0

0 0 None None None None None None 0 1 60h-7Fh C0h-FFh 180h-1FFh 300h-3FFh 600h-7FFh C00h-FFFh 1 0 40h-7Fh 80h-FFh 100h-1FFh 200h-3FFh 400h-7FFh 800h-FFFh 1 1 00h-7Fh 00h-FFh 000h-1FFh 000h-3FFh 000h-7FFh 000h-FFFh

○WPB pin

By setting WPB=LOW, write command is prohibited. As for BR25H080/160/320-WC, only when WPEN bit is set “1”, the WPB pin functions become valid. And the write command to be disabled at this moment is WRSR. As for BR25H010/ 020/040-WC, both WRITE and WRSR commands are prohibited. However, when write cycle is in execution, no interruption can be made.

Product number WRSR WRITE BR25H010-WC BR25H020-WC BR25H040-WC BR25H080-WC BR25H160-WC BR25H320-WC

○HOLDB pin

By HOLDB pin, data transfer can be interrupted. When SCK=”0”, by making HOLDB from “1” into”0”, data transfer to EEPROM is interrupted. When SCK = “0”, by making HOLDB from “0” into “1”, data transfer is restarted.

WPEN 0 0 0 BP1 BP0 WEN

Function Contents

WPB pin enable / disable designation bit

WPEN=0=invalid

WPEN=1=valid

Write and write status register write enable

/ disable status confirmation bit

WEN=0=prohibited

WEN=1=permitted

Write cycle status (READY / BUSY) status confirmation bit

R/B=0=READY

R/B=1=BUSY

BR25H010-WC BR25H020-WC BR25H040-WC BR25H080-WC BR25H160-WC BR25H320-WC

Prohibition

possible

Prohibition possible

but WPEN bit “1”

Write disable block

Prohibition

possible

Prohibition impossible

R―/B

This enables / disables the functions of WPB pin.

This designates the write disable area of EEPROM. Write designation areas of product numbers are shown below.

Datasheet

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Datasheet

BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)

●Command Mode

Ope code

Datasheet

Command Contents

BR25H010-WC BR25H020-WC

BR25H040-WC

BR25H080-WC BR25H160-WC BR25H320-WC

WREN Write enable Write enable command 0000 *110 0000 *110 0000 0110

WRDI Write disable Write disable command 0000 *100 0000 *100 0000 0100

READ Read Read command 0000 *011 0000 A8011 0000 0011

WRITE Write Write command 0000 *010 0000 A8010 0000 0010

RDSR Read status register Status register read command 0000 *101 0000 *101 0000 0101

WRSR Write status register Status register write command 0000 *001 0000 *001 0000 0001

*=Don’t Care Bit.

●Timing Chart

1. Write enable (WREN) / disable (WRDI) cycle

WREN (WRITE ENABLE): Write enable

CSB

SCK

603 712 45

0000*1110

High-Z

Fig.33 Write enable command

*1 BR25H010/020/040-WC= Don’t care BR25H080/160/320-WC= “0” input

WRDI (WRITE DISABLE): Write disable

CSB

SCK

0312 4 7

5 6

00 0 0SI*1 1 0 0

High-Z

Fig.34 Write disable

*1 BR25H010/020/040-WC= Don’t care BR25H080/160/320-WC= “0” input

○This IC has write enable status and write disable status. It is set to write enable status by write enable command, and

it is set to write disable status by write disable command. As for these commands, set CSB LOW, and then input the respective ope codes. The respective commands accept command at the 7-th clock rise. Even with input over 7 clocks, command becomes valid.

When to carry out write and write status register command, it is necessary to set write enable status by the write enable command. If write or write status register command is input in the write disable status, commands are cancelled. And even in the write enable status, once write and write status register command is executed, it gets in the write disable status. After power on, this IC is in write disable status.

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Datasheet

BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)

A0A

2. Read command (READ)

CSB

SCK

0 3 7 1 2

0 0 0 0 ＊1

High-Z

Fig.35 Read command (BR25H010/020/040-WC)

4 5

6 8

1 10

9 10 11

A6 A5

～～

15 2216

～～

D2 D1

*1 BR25H010/020-WC=Don’t care

BR25H040-WC=A8

Product

number BR25H010-WC A6-A0 BR25H020-WC A7-A0 BR25H040-WC A8-A0

CSB

SCK

0 3 7 1 2

0 0 0 0 0

High-Z

4 5

6 8

Fig.36 Read command (BR25H080/160/320-WC)

～

＊

1 1 0

～

～～

23 3024

～

～～

Product

number

～～

BR25H080-WC A9-A0 BR25H160-WC A10-A0

～

D2 D1

BR25H320-WC A11-A0

*=Don’t Care *1 BR25H010/020/040-WC=15 clocks BR25H080/160/320-WC=23 clocks

By read command, data of EEPROM can be read. As for this command, set CSB LOW, then input address after read ope code. EEPROM starts data output of the designated address. Data output is started from SCK fall of 15/23 from D7 to D0 sequentially. This IC has increment read function. After output of data for 1 byte (8bits), by continuing input of SCK, data of the next address can be read. Increment read can read all the addresses of EEPROM. After reading data of the most significant address, by continuing increment read, data of the most insignificant address is read.

3. Write command (WRITE)

CSB

SCK

1 2 4

0 3 7 8 5 6

0 0 0 0

High-Z

＊1

Fig.37 Write command (BR25H010/020/040-WC)

～

～～

A5 A6 A7

～～

～

15 2216

～

A0A1

～

～～

～

D2 D1D7

Product

number BR25H010-WC A6-A0 BR25H020-WC A7-A0 BR25H040-WC A8-A0

*1 BR25H010/020-WC=Don’t care BR25H040-WC=A8

CSB

～

SCK

1 2 4

0 3 7 8 5 6

0 0 0 0 0

High-Z

～

＊＊

＊

～

A11

～

23 3024

A0A1

Fig.38 Write command (BR25H080/160/320-WC)

～

D2 D1D7

＊=Don't Care

Product

number BR25H080-WC A9-A0 BR25H160-WC A10-A0 BR25H320-WC A11-A0

*1 BR25H010/020/040-WC=16 bytes at maximum BR25H080/160/320-WC=32 bytes at maximum

2 BR25H010/020/040-WC=Insignificant 4 bits

BR25H080/160/320-WC=Insignificant 5 bits

By write command, data of EEPROM can be written. As for this command, set CSB LOW, then input address and data after write ope code. Then, by making CSB HIGH, the EEPROM starts writing. The write time of EEPROM requires time of tE/W (Max 5ms). During tE/W, other than status read command is not accepted. Start CSB after taking the last data (D0), and before the next SCK clock starts. At other timing, write command is not executed, and this write command is cancelled. This IC has page write function, and after input of data for 1 byte (8 bits), by continuing data input without starting CSB, data up to 16/32

bytes can be written for one tE/W. In page write, the insignificant 4/5

bit of the designated address is incremented internally at every time when data of 1 byte is input and data is written to respective addresses. When data of the maximum bytes or higher is input, address rolls over, and previously input data is overwritten.

Datasheet

Address

length

Address

length

clock, and

Address

length

Address

length

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Datasheet

BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)

4. Status register write / read command

CSB

SCK

1 2 4

0 3 7 85 6

0 0 0 0

High-Z

＊

Fig.39 Status register write command (BR25H010/020/040-WC)

9 10 11 12 13 14 15

bit7 bit6 bit5 bit4 bit3 bit2 bit1 bit0

＊

＊＊

BP1 BP0

＊

＊＊

＊=Don't care

CSB

SCK

1 2 4

0 3 7 85 6

0 0 0 0 1

High-Z

Fig.40 Status register write command (BR25H080/160/320-WC)

9 10 11 12 13 14 15

bit7 bit6 bit5 bit4 bit3 bit2 bit1 bit0

WPEN

＊＊

＊

BP1 BP0

＊＊

＊=Don't care

Write status register command can write status register data. The data can be written by this command are 2 bits is, BP1 (bit3) and BP0 (bit2) among 8 bits of status register. By BP1 and BP0, write disable block of EEPROM can be set. As for this command, set CSB LOW, and input ope code of write status register, and input data. Then, by making CSB HIGH, EEPROM starts writing. Write time requires time of tE/W as same as write. As for CSB rise, start CSB after taking the last data bit (bit0), and before the next SCK clock starts. At other timing, command is cancelled. Write disable block is determined by BP1 and BP0, and the block can be selected from 1/4 of memory array, 1/2, and entire memory array. (Refer to the write disable block setting table.) To the write disabled block, write cannot be made, and only read can be made.

3bits including BR25H080/160/320-WC WPEN (bit7)

CSB

SCK

5 12

1060

11 15 3 7 9

0 0 0 ＊

High-Z

1 1

bit7 bit6 bit5 bit4

11 BP01 BP1

Fig.41 Status register read command (BR25H010/020/040-WC)

141 2

bit3 bit2 bit1 bit0

WEN

R/B

＊=Don’t care

CSB

SCK

0 0 0

High-Z

5 12

4 8

1 1

bit7 bit6 bit5 bit4

WPEN

1060

11 15 3 7 9

bit3 bit2 bit1 bit0

00 BP00 BP1

141 2

WEN

R/B

Fig.42 Status register read command (BR25H080/160/320-WC)

Datasheet

* 1

, that

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Datasheet

BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)

Datasheet

●At Standby ○Current at standby

Set CSB “H”, and be sure to set SCK, SI, WPB, HOLDB input “L” or “H”. Do not input intermediate electric potantial.

○Timing

As shown in Fig.43, at standby, when SCK is “H”, even if CSB is fallen, SI status is not read at fall edge. SI status is read at SCK rise edge after fall of CSB. At standby and at power ON/OFF, set CSB “H” status.

Even if CSB is fallen at SCK=SI=”H”,

SI status is not read at that edge.

CSB

Command start here. SI is read.

SCK

0 1 2

Fig.43 Operating timing

●WPB Cancel Valid Area

WPB is normally fixed to “H” or “L” for use, but when WPB is controlled so as to cancel write status register command and write command, pay attention to the following WPB valid timing. While write or write status register command is executed, by setting WPB = “L” in cancel valid area, command can be cancelled. The area from command ope code before CSB rise at internal automatic write start becomes the cancel valid area. However, once write is started, any input cannot be cancelled. WPB input becomes Don’t Care, and cancellation becomes invalid.

SCK

6 7

Ope Code Data

Val id

(WEN is reset by WPB=L)

Invalid Val id Invalid

15 16

Data write time

tE/W

Invalid

(BR25H010/020/040-WC)

(BR25H080/160/320-WC)

Fig.44 WPB valid timing (WRSR)

SCK

6 7

Ope Code

Invalid

Address

Val id

(WEN is reset by WPB=L)

Invalid

15/23

Data

Invalid Inva lid

24/32

Data write time

tE/W

Invalid

(BR25H010/020/040-WC)

(BR25H080/160/320-WC)

*1 BR25H010/020/040-WC = 15 BR25H080/160/320-WC = 23 *2 BR25H010/020/040-WC = 24 BR25H080/160/320-WC = 32

Fig.45 WPB valid timing (WRITE)

●HOLDB Pin

By HOLDB pin, command communication can be stopped temporarily (HOLD status). The HOLDB pin carries out command communications normally when it is HIGH. To get in HOLD status, at command communication, when SCK=LOW, set the HOLDB pin LOW. At HOLD status, SCK and SI become Don’t Care, and SO becomes high impedance (High-Z). To release the HOLD status, set the HOLDB pin HIGH when SCK=LOW. After that, communication can be restarted from the point before the HOLD status. For example, when HOLD status is made after A5 address input at read, after release of HOLD status, by starting A4 address input, read can be restarted. When in HOLD status, leave CSB LOW. When it is set CSB=HIGH in HOLD status, the IC is reset, therefore communication after that cannot be restarted.

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BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)

●Method to Cancel Each Command ○READ ・Method to cancel : cancel by CSB = “H”

Ope code Address

8 bits 8 bits/16bits 8 bits

Cancel available in all areas of read mode

Fig.46 READ cancel valid timing

Data

○RDSR ・Method to cancel : cancel by CSB = “H”

Ope code

8 bits 8 bits

Cancel available in all

areas of rdsr mode

Data

Fig.47 RDSR cancel valid timing

○WRITE、PAGE WRITE

a：Ope code, address input area.

Cancellation is available by CSB=”H”

b：Data input area (D7 to D1 input area)

Cancellation is available by CSB=”H”

c：Data input area (D0 area)

Ope code

8bits 8bits/16bits 8bits

Address

tE/W

Data

b d

When CSB is started, write starts. After CSB rise, cancellation cannot be made by any means.

d：tE/W area.

Cancellation is available by CSB = “H”. However, when write starts (CSB is started) in the area c, cancellation

SCK

D7 bD6 D5 D4 D3 D2 D1 D0

cannot be made by any means. And by inputting on SCK clock, cancellation cannot be made. In page write

Fig.48 WRITE cancel valid timing

mode, there is write enable area at every 8 clocks.

Note 1) If V

is made OFF during write execution, designated address data is not guaranteed, therefore

write it once again.

Note 2) If CSB is started at the same timing as that of the SCK rise, write execution / cancel becomes unstable,

therefore, it is recommended to fall in SCK = “L” area. As for SCK rise, assure timing of tCSS / tCSH or higher.

○WRSR

a：From ope code to 15 rise.

Cancel by CSB =”H”.

b：From 15 clock rise to 16 clock rise (write enable area).

When CSB is started, write starts. After CSB rise, cancellation cannot be made by any means.

c：After 16 clock rise.

Cancel by CSB=”H”. However, when write starts (CSB is started) in the area b, cancellation cannot be made by any means. And, by inputting on SCK clock, cancellation cannot be made.

Ope code Data

SCK

8 bits

14 15 16 17

D1 D0

a b c

8 bits

Fig.49 WRSR cancel valid timing

Note 1) If V

is made OFF during write execution, designated address data is not guaranteed, therefore write it once again

Note 2) If CSB is started at the same timing as that of the SCK rise, write execution / cancel becomes unstable, therefore, it is recommended to fall in SCK = “L” area. As for SCK rise, assure timing of tCSS / tCSH or higher.

○WREN/WRDI

a：From ope code to 7-th clock rise, cancel by CSB = “H”. b：Cancellation is not available when CSB is started after 7-th clock.

SCK

Ope code

8 bits

7 8 9

a b

Fig.50 WREN/WRDI cancel valid timing

Datasheet

tE/W

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BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)

●High Speed Operation

In order to realize stable high speed operations, pay attention to the following input / output pin conditions.

○Input pin pull up, pull down resistance

When to attach pull up, pull down resistance to EEPROM input pin, select an appropriate value for the microcontroller VOL, IOL from VIL characteristics of this IC.

○Pull up resistance

Microcontroller

“L” output “L” input

EEPROM

OLM

Fig.51 Pull up resistance

≧

OLM

ILE

Example) When Vcc=5V, V from the equation ①,

RPU≧

VCC-V

≦ V

5-0.4

2×10

OLM

･･･②

ILE

=1.5V, V

ILE

OLM

･･･①

=0.4V, I

=2mA,

OLM

With the value of Rpu to satisfy the above equation, V becomes 0.4V or lower, and with V also satisfied.

∴RPU≧ 2.3[kΩ]

OLM

(=1.5V), the equation ② is

ILE

・V ・V ・I

:EEPROM V

ILE

:Microcontroller VOL specifications

OLM

:Microcontroller IOL specifications

OLM

specifications

And, in order to prevent malfunction, mistake write at power ON/OFF, be sure to make CSB pull up.

○Pull down resistance

Microcontroller

“H” output “H” input

OHM

Fig.52 Pull down resistance

EEPROM

OHM

IHE

≧

≧ V

OHM

Example) When V V

×0.7V, from the equation③,

IHE=VCC

RPD≧

=5V, V

OHM

IHE

OHM=VCC

5-0.5

0.4×10

･･･③

･･･④

-0.5V, I

＝0.4mA,

OHM

∴RPU≧ 11.3[kΩ]

Further, by amplitude VIHE, VILE of signal input to EEPROM, operation speed changes. By inputting signal of amplitude

/ GND level to input, more stable high speed operations can be realized. On the contrary, when amplitude of

of V

0.8VCC / 0.2VCC is input, operation speed becomes slow.*1 In order to realize more stable high speed operation, it is recommended to make the values of R possible, and make the amplitude of signal input to EEPROM close to the amplitude of V

, RPD as large as

/ GND level.

(ж1 At this moment, operating timing guaranteed value is guaranteed.)

tPD[ns]

0 0.2 0.4 0.6 0.8 1

tPD_VIL characteristics

Spec

VIL[V]

Vcc =2.5V

Ta=25

VIH= Vcc

=100pF

℃

Fig.53 VIL dependency of

data output delay time tPD

Datasheet

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○SO load capacity condition

Load capacity of SO output pin affects upon delay characteristic of SO output. (Data output delay time, time from HOLDB to High-Z) In order to make output delay characteristic into higher speed, make SO load capacity small. In concrete, “Do not connect many devices to SO bus”, “Make the wire between the controller and EEPROM short”, and so forth.

VIH/VIL=0.8Vcc /0.2Vcc

tPD[ns]

0 20 40 60 80 100 120

Fig.54 SO load dependency of data output delay time tPD

tPD-CL characteristics

Vcc =2.5V　Ta=25

Spec

℃

CL[pF]

Spec

EEPROM

○Other cautions

Make the wire length from the microcontroller to EEPROM input signal same length, in order to prevent setup / hold violation to EEPROM, owing to difference of wire length of each input.

Datasheet

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BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)

●Input / Output Circuit ○Output circuit

○Input circuit

SCK

Fig.57 SCK input equivalent circuit Fig.58 SI input equivalent circuit

HOLDB

Fig.59 HOLDB input equivalent circuit Fig.60 WPB input equivalent circuit

OEint.

Fig.55 SO output equivalent circuit

CSB

Fig.56 CSB input equivalent circuit

RESET

int.

Datasheet

WPB

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BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)

●Notes on Power ON/OFF ○At power ON/OFF, set CSB “H” (=VCC).

When CSB is “L”, this IC gets in input accept status (active). If power is turned on in this status, noises and the likes may cause malfunction, mistake write or so. To prevent these, at power ON, set CSB “H”. (When CSB is in “H” status, all inputs are canceled.)

Vcc Vcc

GND

Vcc

CSB GND

Good exam

Bad example

Fig.61 CSB timing at power ON/OFF

(Good example) CSB terminal is pulled up to V

CC.

At power OFF, take 10ms or higher before supply. If power is turned on without observing this condition, the IC internal circuit may not be reset, which please note.

(Bad example) CSB terminal is “L” at power ON/OFF.

In this case, CSB always becomes “L” (active status), and EEPROM may have malfunction, mistake write owing to noises and the likes. Even when CSB input is High-Z, the status becomes like this case, which please note.

○LVCC circuit

LVCC (V

-Lockout) circuit prevents data rewrite action at low power, and prevents wrong write.

At LVCC voltage (Typ. =1.9V) or below, it prevent data rewrite.

○P.O.R. circuit

This IC has a POR (Power On Reset) circuit as mistake write countermeasure. After POR action, it gets in write disable status. The POR circuit is valid only when power is ON, and does not work when power is OFF. When power is ON, if the recommended conditions of the following tR, tOFF, and Vbot are not satisfied, it may become write enable status owing to noises and the likes.

, t

Recommended conditions of t

, Vbot

OFF

Vcc

Fig.62 Rise waveform

tOFF

Vbot

R tOFF Vbot

10ms or below 10ms or higher 0.3V or below

100ms or below 10ms or higher 0.2V or below

Datasheet

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BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)

●Noise Countermeasures ○VCC noise (bypass capacitor)

When noise or surge gets in the power source line, malfunction may occur, therefore, for removing these, it is recommended to attach a bypass capacitor (0.1μF) between IC V possible.And, it is also recommended to attach a bypass capacitor between board VCC and GND.

○SCK noise

When the rise time (tR) of SCK is long, and a certain degree or more of noise exists, malfunction may occur owing to clock bit displacement. To avoid this, a Schmitt trigger circuit is built in SCK input. The hysterisis width of this circuit is set about 0.2V, if noises exist at SCK input, set the noise amplitude 0.2Vp-p or below. And it is recommended to set the rise time (tR) of SCK 100ns or below. In the case when the rise time is 100ns or higher, take sufficient noise countermeasures. Make the clock rise, fall time as small as possible.

○WPB noise

During execution of write status register command, if there exist noises on WPB pin, mistake in recognition may occur

and forcible cancellation may result, which please note. To avoid this, a Schmitt trigger circuit is built in WPB input. In the same manner, a Schmitt trigger circuit is built in CSB input, SI input and HOLDB input too.

●Notes of Use

(1) Described numeric values and data are design representative values, and the values are not guaranteed.

(2) We believe that application circuit examples are recommendable, however, in actual use, confirm characteristics

further sufficiently. In the case of use by changing the fixed number of external parts, make your decision with sufficient margin in consideration of static characteristics and transition characteristics and fluctuations of external parts and our LSI.

(3) Absolute maximum ratings

If the absolute maximum ratings such as impressed voltage and operating temperature range and so forth are exceeded, LSI may be destructed. Do not impress voltage and temperature exceeding the absolute maximum ratings. In the case of fear exceeding the absolute maximum ratings, take physical safety countermeasures such as fuses, and see to it that conditions exceeding the absolute maximum ratings should not be impressed to LSI.

(4) GND electric potential

Set the voltage of GND terminal lowest at any action condition. Make sure that each terminal voltage is higher than that of GND terminal.

(5) Heat design

In consideration of permissible dissipation in actual use condition, carry out heat design with sufficient margin.

(6) Terminal to terminal short circuit and wrong packaging

When to package LSI onto a board, pay sufficient attention to LSI direction and displacement. Wrong packaging may destruct LSI. And in the case of short circuit between LSI terminals and terminals and power source, terminal and GND owing to foreign matter, LSI may be destructed.

(7) Use in a strong electromagnetic field may cause malfunction, therefore, evaluate design sufficiently.

and GND. At that moment, attach it as close to IC as

Datasheet

Status of this document The Japanese version of this document is formal specification. A customer may use this translation version only for a reference to help reading the formal version. If there are any differences in translation version of this document formal version takes priority.

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Datasheet

BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)

●Ordering Information

Product code description

B R 2 5 H x x x x - W C E 2

Bus type

25 : SPI

Operating temperature

H :40°C to +125°C

Datasheet

Capacity

010=1K 020=2K 040=4K

080=8K 160=16K 320=32K

Package

F :SOP8

FJ :SOP-J8

FVT :TSSOP-B8

Device Grade

Packaging and forming specification

E2 :Embossed tape and reel

●Lineup

Capacity

16K

32K

Package

Type Quantity

SOP8 Reel of 2500

SOP-J8 Reel of 2500

TSSOP-B8 Reel of 3000

SOP8 Reel of 2500 BR25H020F-WCE2

SOP-J8 Reel of 2500 BR25H020FJ-WCE2

TSSOP-B8 Reel of 3000

SOP8 Reel of 2500 BR25H040F-WCE2

SOP-J8 Reel of 2500 BR25H040FJ-WCE2

TSSOP-B8 Reel of 3000

SOP8 Reel of 2500 BR25H080F-WCE2

SOP-J8 Reel of 2500 BR25H080FJ-WCE2

TSSOP-B8 Reel of 3000 BR25H080FVT-WCE2

SOP8 Reel of 2500 BR25H160F-WCE2

SOP-J8 Reel of 2500 BR25H160FJ-WCE2

TSSOP-B8 Reel of 3000 BR25H160FVT-WCE2

SOP8 Reel of 2500 BR25H320F-WCE2

SOP-J8 Reel of 2500 BR25H320FJ-WCE2

Orderable Part Number

BR25H010F-WCE2

BR25H010FJ-WCE2

BR25H010FVT-WCE2

BR25H020FVT-WCE2

BR25H040FVT-WCE2

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BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)

●Physical Dimensions Tape and Reel Information

SOP8

Datasheet

Embossed carrier tapeTape

Quantity

Direction of feed

2500pcs E2

The direction is the 1pin of product is at the upper left when you hold

()

reel on the left hand and you pull out the tape on the right hand

Reel

1pin

Order quantity needs to be multiple of the minimum quantity.

∗

Direction of feed

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BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)

●Physical Dimensions Tape and Reel Information - continued

SOP-J8

6.0±0.3

4.9±0.2

(MAX 5.25 include BURR)

5678

3.9±0.2

234

0.545

6°

4°

−4°

0.2±0.1

Datasheet

0.45MIN

1.375±0.1

0.175

Embossed carrier tapeTape

Quantity

Direction of feed

2500pcs E2

The direction is the 1pin of product is at the upper left when you hold

()

reel on the left hand and you pull out the tape on the right hand

1.27

0.42±0.1

0.1

(Unit : mm)

Reel

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1pin

Order quantity needs to be multiple of the minimum quantity.

∗

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23.May.2012 Rev.001

Datasheet

BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)

●Physical Dimensions Tape and Reel Information - continued

TSSOP-B8

3.0± 0.1

(MAX 3.35 include BURR)

8765

4.4± 0.1

6.4± 0.2

Datasheet

4 ± 4

0.5± 0.15

0.525

1.2MAX

1.0± 0.05

0.1± 0.05

0.65

Embossed carrier tapeTape

Quantity

Direction of feed

3000pcs E2

The direction is the 1pin of product is at the upper left when you hold

()

reel on the left hand and you pull out the tape on the right hand

234

1PIN MARK

0.245

0.08 S

+0.05 –0.04

1.0±0.2

+0.05

0.145

–0.03

0.08

(Unit : mm)

Reel

・15・001

1pin

Direction of feed

Order quantity needs to be multiple of the minimum quantity.

∗

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BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)

●Marking Diagrams

SOP8 (TOP VIEW)

TSSOP-B8(TOP VIEW)

●Marking Information

Capacity Product Name

4K H040

8K H080

16K H160

32K H320

Part Number Marking

LOT Number

1PIN MARK

Marking

H010

H020

Part Number Marking

LOT Number

1PIN MARK

Package

Typ e

SOP8

SOP-J8

TSSOP-B8

SOP8

SOP-J8

TSSOP-B8

SOP8

SOP-J8

TSSOP-B8

SOP8

SOP-J8

TSSOP-B8

SOP8

SOP-J8

TSSOP-B8

SOP8

SOP-J8

Datasheet

SOP-J8 (TOP VIEW)

Part Number Marking

LOT Number

1PIN MARK

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BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)

●Revision History

Date Revision Changes

23.May.2012 001 New Release

Datasheet

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Notice

●General Precaution

1) Before you use our Products, you are requested to carefully read this document and fully understand its contents. ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any ROHM’s Products against warning, caution or note contained in this document.

2) All information contained in this document is current as of the issuing date and subject to change without any prior notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales representative.

●Precaution on using ROHM Products

1) Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment, OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment, transport equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific Applications.

2) ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which a failure or malfunction of our Products may cause. The following are examples of safety measures:

[a] Installation of protection circuits or other protective devices to improve system safety [b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure

3) Our Products are designed and manufactured for use under standard conditions and not under any special or extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our Products under any special or extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:

[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents [b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust [c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl

2S, NH3, SO2, and NO2

H [d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves [e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items [f] Sealing or coating our Products with resin or other coating materials [g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of

flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning residue after soldering

[h] Use of the Products in places subject to dew condensation

4) The Products are not subject to radiation-proof design.

5) Please verify and confirm characteristics of the final or mounted products in using the Products.

6) In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse) is applied, confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect product performance and reliability.

7) De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual ambient temperature.

8) Confirm that operation temperature is within the specified range described in the product specification.

9) ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in this document.

Notice - Rev.003

Datasheet

●Precaution for Mounting / Circuit board design

1) When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product performance and reliability.

2) In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the ROHM representative in advance.

For details, please refer to ROHM Mounting specification

●Precautions Regarding Application Examples and External Circuits

1) If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the characteristics of the Products and external components, including transient characteristics, as well as static characteristics.

2) You agree that application notes, reference designs, and associated data and information contained in this document are presented only as guidance for Products use. Therefore, in case you use such information, you are solely responsible for it and you must exercise your own independent verification and judgment in the use of such information contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of such information.

●Precaution for Electrostatic

This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron, isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).

●Precaution for Storage / Transportation

1) Product performance and soldered connections may deteriorate if the Products are stored in the places where:

[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2 [b] the temperature or humidity exceeds those recommended by ROHM [c] the Products are exposed to direct sunshine or condensation [d] the Products are exposed to high Electrostatic

2) Even under ROHM recommended storage condition, solderability of products out of recommended storage time period may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is exceeding the recommended storage time period.

3) Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads may occur due to excessive stress applied when dropping of a carton.

4) Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of which storage time is exceeding the recommended storage time period.

●Precaution for Product Label

QR code printed on ROHM Products label is for ROHM’s internal use only.

●Precaution for Disposition

When disposing Products please dispose them properly using an authorized industry waste company.

●Precaution for Foreign Exchange and Foreign Trade act

Since our Products might fall under controlled goods prescribed by the applicable foreign exchange and foreign trade act, please consult with ROHM representative in case of export.

●Precaution Regarding Intellectual Property Rights

1) All information and data including but not limited to application example contained in this document is for reference only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any other rights of any third party regarding such information or data. ROHM shall not be in any way responsible or liable for infringement of any intellectual property rights or other damages arising from use of such information or data.:

2) No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any third parties with respect to the information contained in this document.

Datasheet

Notice - Rev.003

Datasheet

●Other Precaution

1) The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or concerning such information.

2) This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.

3) The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written consent of ROHM.

4) In no event shall you use in any way whatsoever the Products and the related technical information contained in the Products or this document for any military purposes, including but not limited to, the development of mass-destruction weapons.

5) The proper names of companies or products described in this document are trademarks or registered trademarks of ROHM, its affiliated companies or third parties.

Datasheet

Notice - Rev.003

ROHM BR25H010F-W Technical data

Specifications and Main Features

Frequently Asked Questions

User Manual