ROHM 2SD2696 Technical data
z
Low frequency transistor (for amplification)
2SD2696
zStructure zDimensions (Unit : mm)
NPN Silicon Epitaxial Planar Transistor
zFeatures
1) The transistor of 400mA class which went only with 2012
size conventionally is attained in 1208 size.
2) Collector saturation voltage is low.
VCE (sat) : max. 300mA at IC = 100mA / IB = 2mA
zApplications
Switching
zPackaging specifications zInner circuit
Type
2SD2696
Package
Code
Basic ordering unit (pieces)
Taping
T2L
8000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
∗1 Pw=10ms, Single pulse
∗2 Each terminal mounted on a recommended land.
Symbol
CBO
CEO
EBO
C
CP
D
∗1
∗2
Limits Unit
30
30
6
400
800
150
mW / TOTALP
150
−55 to +150
VV
VV
VV
mAI
mAI
°CTj
°CTstg
zElectrical characteristics (Ta=25°C)
Parameter Symbol
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
BV
BV
BV
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
V
DC current gain
Transition frequency
Output capacitance
CEO
CBO
EBO
I
CBO
I
EBO
CE (sat)
h
FE
f
T
C
ob
Min.30Typ. Max.
−−VI
30 −−VI
6 −−VI
−−100 nA V
−−100 nA V
− 120 300 mV I
270 −
400
−
3.0
−−pF VCB=10V, IE= 0A, f=1MHz
Unit
680 − V
− MHz V
=1mA
C
=10µA
C
=10µA
E
= 30V
CB
= 6V
EB
=100mA, IB= 2mA
C
=2V, IC=100mA
CE
=2V, IE= −100mA, f=100MH
CE
VMT3
(1) Base
(2) Emitter
(3) Collector
(1) Base
Conditions
1.2
0.32
(3)
(2)
(1)
0.22
0.40.4
0.8
Abbreviated symbol : UH
(3) Collector
(2) Emitter
0.2
1.2
0.8
0.13
0.2
0.5
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2009 ROHM Co., Ltd. All rights reserved.
2009.05 - Rev.B
A
A
A
[
]
2SD2696
zElectrical characteristics curves
400
Ta=25°C
puls ed
2m
[mA]
C
300
1.6m
200
100
COLLECTOR CURRENT : I
0
012345
COLLECTOR - EMIT TER VOLTAGE : V
1m
0.8mA
0.6mA
0.4mA
IB=0.2mA
Fig.1 Typical Output Characteristics
1.2mA
Data Sheet
1000
VCE=2V
puls ed
mA
C
Ta= 125°C
85°C
100
25°C
-40°C
10
COLLECTOR CURRENT : I
1
0.2 0.4 0. 6 0.8 1
[V]
CE
BASE TO EM ITTER VOLTAGE : V
Fig.2 Grounded Emitter Propagation
Characteristics
[V]
BE
1000
FE
100
DC CURRENT GAIN : h
Ta=25°C
puls ed
10
1 10 100 1000
COLLECTOR CURRENT : I
VCE=2V
Fig.3 DC Current Gain vs
Collector Current
1
Ta=25°C
puls ed
[V]
CE(sat)
0.1
VOLTAGE : V
COLLECTOR SATURATION
0.01
IC/IB=50/ 1
20/1
10/1
1 10 100 1000
COLLECTOR CURRENT : I
Fig.5 Collector-Emi tter Saturation
Voltage vs Collector Current (Ⅰ)
VCE=5V
[mA]
C
C
（Ⅰ）
[mA]
1000
FE
Ta= 125°C
85°C
100
25°C
-40°C
DC CURRENT GAIN : h
10
1 10 100 1000
COLLECTOR CURRENT : I
C
Fig.4 DC Current Gain vs
Collector Current
1
IC/IB=10/ 1
puls ed
Ta= 125°C
[V]
85°C
0.1
CE(sat)
25°C
: V
COLLECTOR SATURATION VOLTAGE
-40°C
0.01
1 10 100 1000
COLLECTOR CURRENT : I
Fig.6 Collector-Emitter Saturation
Voltage vs Collector Current (Ⅱ)
VCE=2V
puls ed
[mA]
（Ⅱ）
[mA]
C
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2009 ROHM Co., Ltd. All rights reserved.
2009.05 - Rev.B
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