ROHM 2SD2696 Technical data

z

Low frequency transistor (for amplification)

2SD2696

zStructure zDimensions (Unit : mm)
NPN Silicon Epitaxial Planar Transistor

zFeatures

1) The transistor of 400mA class which went only with 2012
size conventionally is attained in 1208 size.

2) Collector saturation voltage is low.

VCE (sat) : max. 300mA at IC = 100mA / IB = 2mA

zApplications

Switching

zPackaging specifications zInner circuit

Type

2SD2696

Package
Code
Basic ordering unit (pieces)

Taping

T2L

8000

zAbsolute maximum ratings (Ta=25°C)

Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current
Power dissipation

Junction temperature
Range of storage temperature

∗1 Pw=10ms, Single pulse
∗2 Each terminal mounted on a recommended land.

Symbol

CBO
CEO
EBO

C

CP

D

∗1
∗2

Limits Unit

30
30

6
400
800
150

mW / TOTALP

150

−55 to +150

VV
VV

VV
mAI
mAI

°CTj
°CTstg

zElectrical characteristics (Ta=25°C)

Parameter Symbol
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage

BV
BV

BV
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage

V

DC current gain
Transition frequency
Output capacitance

CEO
CBO
EBO

I

CBO

I

EBO

CE (sat)

h

FE

f

T

C

ob

Min.30Typ. Max.

−−VI

30 −−VI

6 −−VI

−−100 nA V

−−100 nA V

− 120 300 mV I

270 −

400

−

3.0

−−pF VCB=10V, IE= 0A, f=1MHz

Unit

680 − V

− MHz V

=1mA

C

=10µA

C

=10µA

E

= 30V

CB

= 6V

EB

=100mA, IB= 2mA

C

=2V, IC=100mA

CE

=2V, IE= −100mA, f=100MH

CE

VMT3

(1) Base
(2) Emitter
(3) Collector

(1) Base

Conditions

1.2

0.32

(3)

(2)

(1)

0.22

0.40.4

0.8

Abbreviated symbol : UH

(3) Collector

(2) Emitter

0.2

1.2

0.8

0.13

0.2

0.5

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2009.05 - Rev.B

A

A

A

[

]

2SD2696

zElectrical characteristics curves

400

Ta=25°C
puls ed

2m

[mA]

C

300

1.6m

200

100

COLLECTOR CURRENT : I

0

012345

COLLECTOR - EMIT TER VOLTAGE : V

1m

0.8mA

0.6mA

0.4mA

IB=0.2mA

Fig.1 Typical Output Characteristics

1.2mA

Data Sheet

1000

VCE=2V
puls ed

mA

C

Ta= 125°C

85°C

100

25°C

-40°C

10

COLLECTOR CURRENT : I

1

0.2 0.4 0. 6 0.8 1

[V]

CE

BASE TO EM ITTER VOLTAGE : V

Fig.2 Grounded Emitter Propagation
Characteristics

[V]

BE

1000

FE

100

DC CURRENT GAIN : h

Ta=25°C
puls ed

10

1 10 100 1000

COLLECTOR CURRENT : I

VCE=2V

Fig.3 DC Current Gain vs

Collector Current

1

Ta=25°C
puls ed

[V]

CE(sat)

0.1

VOLTAGE : V

COLLECTOR SATURATION

0.01

IC/IB=50/ 1

20/1
10/1

1 10 100 1000

COLLECTOR CURRENT : I

Fig.5 Collector-Emi tter Saturation

Voltage vs Collector Current (Ⅰ)

VCE=5V

[mA]

C

C

（Ⅰ）

[mA]

1000

FE

Ta= 125°C

85°C

100

25°C

-40°C

DC CURRENT GAIN : h

10

1 10 100 1000

COLLECTOR CURRENT : I

C

Fig.4 DC Current Gain vs

Collector Current

1

IC/IB=10/ 1
puls ed

Ta= 125°C

[V]

85°C

0.1

CE(sat)

25°C

: V

COLLECTOR SATURATION VOLTAGE

-40°C

0.01
1 10 100 1000

COLLECTOR CURRENT : I

Fig.6 Collector-Emitter Saturation

Voltage vs Collector Current (Ⅱ)

VCE=2V
puls ed

[mA]

（Ⅱ）

[mA]

C

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2009.05 - Rev.B

2SD2696

Data Sheet

1

IC/IB=20/1
puls ed

[V]

Ta= 125

CE(sat)

0.1

VOLTAGE : V

COLLECTOR SATURATION

0.01

℃

85

℃

25

℃

-40

℃

1 10 100 1000

COLLECTOR CURRNT : I

C

[mA]

Fig.7 Collector-Emitter Saturation

Voltage vs Coll ector Current (Ⅲ)

1000

Ta=25°C
V

= 2V

CE

puls ed

1

Ta= 125°C

85°C

[V]

25°C

-40°C

CE(sat)

0.1

VOLTAGE : V

COLLECTOR SATURATION

0.01
1 10 100 1000

COLLECTOR CURRENT : I

IC/IB=50/1
puls ed

C

Fig.8 Coll ector-Emitter Saturation

Voltage vs Coll ector Current (Ⅳ)

100

[mA]

Ta=25°C
f=1M Hz
I

=0A

E

I

=0A

C

Cib

100

[MHz ]

T

: f

10

Cob

TRANSITION FREQUENCY

10

1 10 100 1000

EMITTER CURRENT : I

[mA]

E

Fig.9 Transion frequency v s
Emitter Collector

1

0.1 1 10 100

EMITTER INPUT CAPACITANCE : Cib(pF)

COLLEC TOR - BASE VOLTAGE : V

COLLEC TOR OU TPUT C APACITAN CE : Cob( pF)

EMIT TER - BASE VOLTAGE : V

(V)

CB

(V)

EB

Fig.10 Emitter input capacitance vs. Emitter­ Base Voltage
Collector output capacitance vs. Collector­ Base Voltage

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