
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Darlington Transistor
Ordering number:ENN6449
2SD2635
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
120V / 2A Driver Applications
Applications
· Motor drivers, hammer drivers, and relay drivers.
Features
· Darlington connection
· High DC current gain.
· DC current gain is less affected by temperature.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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egatloVrettimE-ot-rotcelloCV
egatloVniatsuSesaB-ot-rotcelloCV
egatloVesaB-ot-rettimEV
tnerruCrotcelloCI
)eslup(tnerruCrotcelloCI
noitapissiDrotcelloCP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
OBC
OEC
OEC
OBE
C
PC
C
Package Dimensions
unit:mm
2064A
[2SD2635]
6.9
4.5
1.01.0
0.6
0.9
123
2.54
)sus( 021V
0.5
2.54
1.45
2.5
1.0
1.0
4.0
0.45
1 : Emitter
2 : Collector
3 : Base
SANYO : NMP
021V
021V
6V
2A
3A
1W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
tnerruCffotuCrotcelloCI
tnerruCffotuCrettimEI
hEF1VECI,V3=
niaGtnerruCCD
hEF2VECI,V3=
hEF3VECI,V3=
V
OBC
V
OBE
I,V001=
BC
BE
0=01Aµ
E
I,V5=
0=5.2Am
C
A5.0=0001
C
A1=000200003
C
A1.0=003
C
92500TS (KOTO) TA-2846 No.6449–1/3
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nimpytxam
Continued on next page.
tinU

Continued from preceding page.
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Electrical Connection
C
B
R2R1
2SD2635
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egatloVnwodkaerBrettimE-ot-rotcelloCV
egatloVniatsuSrettimE-ot-rotcelloCV
EC
EB
OEC
)tas(ICI,A1=
)tas(ICI,A1=
I
OBC)RB(
C
I
OEC)RB(
C
)sus(I
C
Am2=5.1V
B
Am2=0.2V
B
I,Aµ001=
0=021V
E
R,Am01=
=∞ 021V
EB
depmalC,Hm01=L,A1=021V
sgnitaR
nimpytxam
tinU
R1≈5kΩ
R2≈500Ω
2.0
1.6
–A
C
1.2
0.8
Collector Current, I
0.4
0
0
Collector-to-Emitter Voltage, VCE –V
10000
7
5
3
2
FE
1000
7
5
3
DC Current Gain, h
2
100
7
5
23 57 23 23577
E
I
-- V
C
1234
hFE -- I
CE
C
350
25
°C
µA
300
250
200
150
100
400
µA
µA
µA
µA
I
B
IT02069
µA
µA
=0
°C
Ta=75
°C
--25
0.10.01 1.0
Collector Current, IC–A
IT02071
I
-- V
2.2
2.0
1.8
1.6
–A
1.4
C
1.2
1.0
0.8
0.6
Collector Current, I
0.4
0.2
0
5
–V
0.20 0.4 0.6 0.8 1.0 1.2 1.4 2.01.81.6
Base-to-Emitter Voltage, VBE –V
2
1.5
C
VCE(sat) -- I
BE
°C
Ta=75
C
°C
°C
25
--25
IC / IB=500
IT02070
(sat)
CE
1.0
°C
9
8
7
6
Collector–to–Emitter
Saturation Voltage, V
5
25
Ta= --
°C
25
75°C
0.1
23557723
Collector Current, IC–A
1.0
IT02072
No.6449–2/3

2SD2635
3
–V
(sat)
2
BE
1.5
1.0
Base–to–Emitter
Saturation Voltage, V
0.7
1.2
1.0
0.1
–W
C
0.8
0.6
VBE(sat) -- I
Ta= --25
°C
°C
25
C
75°C
23 557 7 2 3
Collector Current, IC–A
P
-- Ta
C
1.0
IC / IB=500
IT02073
10
7
5
ICP=3A
3
IC=2A
2
1.0
7
–A
5
C
3
2
0.1
7
5
3
2
0.01
Collector Current, I
7
5
3
2
Ta=25
0.001
0.1 1.0 1000
Forward Bias A S O
10µs
10ms
100ms
DC operation
°C
3572357235723572
Collector-to-Emitter Voltage, VCE–V
10 100
100µs
1ms
IT02075
0.4
Collector Dissipation, P
0.2
0020 40 60 80 100 120 140 160
Ambient Temperature, Ta – °C
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
IT02074
This catalog provides information as of September, 2000. Specifications and information herein are
subject to change without notice.
PS No.6449–3/3