Page 1
DATA SHEET
SILICON POWER TRANSISTOR
2SD560
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
The 2SD560 is a mold power transistor developed for low-
frequency power amplifiers and low-speed switching. This transistor is
ideal for direct driving from the IC output of devices such as pulse
motor drivers and relay drivers, and PC terminals.
FEATURES
• C-to-E reverse diode inserted
• Low collector saturation voltage
ABSOLUTE MAXIMUM RATINGS (TA = 25°°°°C)
Parameter Symbol Conditions Ratings Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector current (DC) I
Collector current (pulse) I
Base current (DC) I
Total power dissipation P
Junction temperature T
Storage temperature T
C(pulse)
CBO
CEO
EBO
C(DC)
B(DC)
T
j
stg
PW ≤ 10 ms,
duty cycle ≤ 50%
TC = 25°C
TA = 25°C
150 V
100 V
7.0 V
±5.0
±8.0
0.5 A
30 W
1.5 W
150
−55 to +150 °C
°C
A
A
ORDERING INFORMATION
Ordering Name Package
2SD560 TO-220AB
(TO-220AB)
INTERNAL EQUIVALENT CIRCUIT
1. Base
2. Collector
3. Emitter
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14863EJ3V0DS00 (3rd edition)
Date Published April 2002 N CP(K)
Printed in Japan
2002
1998©
Page 2
ELECTRICAL CHARACTERISTICS (TA = 25°°°°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Collector cutoff current I
Collector saturation voltage V
Base saturation voltage V
Turn-on time t
Storage time t
Fall time t
Note Pulse test PW ≤ 350
h
h
CE(sat)IC
BE(sat)IC
µ
s, duty cycle ≤ 2%
CBO
FE1
FE2
on
stg
VCB = 100 V, IE = 0 A 1.0
VCE = 2.0 V, IC = 3.0 A
VCE = 2.0 V, IC = 5.0 A
= 3.0 A, IB = 3.0 mA
= 3.0 A, IB = 3.0 mA
IC = 3.0 A, RL = 16.7 Ω,
I
= −IB2 = 3.0 mA, VCC ≅ 50 V
B1
Refer to the test circuit.
f
hFE CLASSIFICATION
Marking MB LB KB
h
FE1
2,000 to 5,000 3,000 to 7,000 5,000 to 15,000
Note
Note
Note
Note
2,000 6,000 15,000DC current gain
500
0.9 1.5 V
1.6 2.0 V
1.0
3.5
1.2
2SD560
A
µ
s
µ
s
µ
s
µ
SWITCHING TIME (ton, t
, tf) TEST CIRCUIT
stg
Base current
wavefor m
Collector current
wavefor m
2
Data Sheet D14863EJ3V0DS
Page 3
TYPICAL CHARACTERISTICS (TA = 25°°°°C)
Heatsink’: 2.0 mm
Aluminum, bpard
No insulating boad
(W)
T
Total Power Dissipation P
Without heatsink
Silicon brease coating
Horizontal level
With infinite heatsink (Tc = 25°C)
(A)
C
Collector Current I
2SD560
Single pulse
Temperature T (°C)
(A)
C
FE
Collector to Emitter Voltage VCE (V)
Pulse test
DC Current Gain h
Collector Current I
Collector to Emitter Voltage VCE (V)
(V)
(V)
CE(sat )
BE(sat)
Pulse test
Collector Current IC (A)
Base Saturation Voltage V
Collector Saturation Voltage V
Collector Current IC (A)
Data Sheet D14863EJ3V0DS
3
Page 4
PACKAGE DRAWING (UNIT: mm)
1. Base
2. Collector
3. Emitter
4. Fin (collector)
2SD560
4
Data Sheet D14863EJ3V0DS
Page 5
[MEMO]
2SD560
Data Sheet D14863EJ3V0DS
5
Page 6
2SD560
•
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M8E 00. 4
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