Datasheet 2SD2537 Datasheet (ROHM)

2SD2537

1

2

Transistors

Medium Power Transistor (25V, 1.2A)

2SD2537

zFeatures

1) High DC current gain.

2) High emitter-base voltage. (V

EBO

=12V)

3) Low saturation voltage. (Max. V

CE(sat)

=0.3V at IC/IB=500mA/10mA)

zAbsolute maximum ratings (Ta=25°C)

Collector-base voltage

Parameter Symbol

Collector-emitter voltage Emitter-base voltage

Collector current

Collector power dissipation Junction temperature

Storage temperature

∗1 Single pulse Pw=100ms ∗2 When mounted on a 40×40×0.7mm ceramic board.

V V V

P

Tstg

Limits

CBO CEO EBO

I

C

Tj

30 25 12

1.2 2

0.5 W 2

150

−55 to +150

zPackaging specifications and h

Type

Package

h

FE

Marking

Code

Basic ordering unit (pieces)

2SD2537

MPT3

V

DV T100 1000

FE

zElectrical characteristics (T a=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage

BV BV BV

V V

I I

CE(sat) BE(sat)

DC current transfer ratio Transition frequency Output capacitance

∗Measured using pulse current.

Cob

A (Pulse)

CBO CEO

EBO CBO EBO

FE

h

f

T

Unit

V V V

A (DC)

W

°C °C

zDimensions (Unit : mm)

2SD2537

ROHM : MPT3 EIAJ : SC-62

∗

30

−

25

−

12

−

200

20

−

0.3

1.2 V

1800

−

−−

820

−

4.5

1.6

(3)(2)(1)

0.5

0.40.4

1.51.5

3.0

C

=10µA

V

I

C

=1mA

I

V

E

=10µA

I

V

CB

V I

C

V

=30V

EB

=12V

/IB=500mA/10mA

µA µA

IC/IB=0.5A/10mA V

CE/IC

−

MHz

pF

=5V/0.5A

VCE=10V, IE=−50mA, f=100MHz

CB

=10V, IE=0A, f=1MHz

V

0.5

2.5

1.0

4.0

1.5

0.4

(1) Base (2) Collector (3) Emitter

∗

Rev.C 1/3

Transistors

)

5

)

s

4

)

0

)

0

)

e

0

)

e

0

zElectrical characteristics curves

2.0 Ta=25

°C

(mA)

1.6

C

1.2

0.8

0.4

COLLECTOR CURRENT : I

0

0.1 0.2 0.3 0.4 0.

0

COLLECTOR TO EMITTER VOLTAGE : V

Fig.1 Ground emitter output characteristics(

10000

5000

FE

2000 1000

500

200 100

50

DC CURRENT GAIN : h

20 10

2 5 10 20 50

COLLECTOR CURRENT : I

Fig.4 DC current gain vs. collector current (

1000

(mV

500

BE(sat)

200 100

50

20 10

5

Ta=100

°C

25

°C

−25

2.0µA

1.8µA

1.6µA

1.4µA

1.2µA

1.0µA

0.8µA

0.6µA

0.4µA

0.2µA

100 200 500 1000 200

°C

VCE=10V

C

(mA)

IB=0

Ta=25 Pulsed

1V

IC/IB=50 Pulsed

CE

(V)

°C

5V 3V

2.0

(A)

C

1.6

1.2

0.8

0.4

COLLECTOR CURRENT : I

0

3.5mA

3.0mA

2.5mA

4.0mA

4.5mA

5.0mA

0.1 0.2 0.3 0.4 0.50

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

IB=0

2.0mA

1.5mA

1.0mA

0.5mA Ta=25°C

Pulsed

Fig.2 Ground emitter output characteristics (

10000

5000

FE

2000 1000

500

200 100

50

DC CURRENT GAIN : h

20 10

Ta=100

°C

25

°C

−25

°C

2 5 10 20 50

COLLECTOR CURRENT : I

100 200 500 1000 200

Fig.5 DC current gain vs. collector current (

C

V Pulsed

(mA)

CE

=5V

10000

5000

(mV)

BE(sat)

2000 1000

500

200 100

IC/IB=10

50

100

50

Ta=25 Pulsed

2000 1000

500

(mA)

C

200 100

50

20 10

5

COLLECTOR CURRENT : I

2 0

BASE TO EMITTER VOLTAGE : V

Fig.3 Ground emitter propagation characteristic

1000

(mV

500

BE(sat)

200 100

50

IC/IB=100

20

50

10

5

2 1

COLLECTOR SATURATION VOLTAGE : V

2 5 10 20 50

COLLECTOR CURRENT : I

Fig.6 Collector-emitter saturation voltag vs. collector current ( )

°C

10000

5000

(mV)

BE(sat)

2000 1000

500

200 100

50

2SD2537

°C

100

−25

25

=

Ta

0.6 0.4 0.2 1.0 0.8 1.2 1.

100 200 500 1000 200

Ta

= −

25

°C

50

100

C

(mA)

V

CE

Pulsed

BE

Ta=25 Pulsed

IC/IB=50 Pulsed

=

5V

(V)

°C

2 1

COLLECTOR SATURATION VOLTAGE : V

2 5 10 20 50

COLLECTOR CURRENT : I

100 200 500 1000 200

C

(mA)

Fig.7 Collector-emitter saturation voltag vs. collector current ( )

Rev.C 2/3

20

BASE SATURATION VOLTAGE : V

10

2 5 10 20 50

COLLECTOR CURRENT : I

100 200 500 1000 200

C

(mA)

Fig.8 Base-emitter saturation voltage vs. collector current ( )

20

BASE SATURATION VOLTAGE : V

10

2 5 10 20 50

COLLECTOR CURRENT : I

100 200 500 1000 200

C

(mA)

Fig.9 Base-emitter saturation voltage vs. collector current ( )

Transistors

0

)

0

5000

(MHz)

T

2000 1000

500

200 100

50

TRANSITION FREQUENCY : f

20 10

−1 −2 −5 −10 −20 −50 −100 −200 −500 −100 EMITTER CURRENT : I

E

(mA)

CE

=10V

V Ta=25°C Pulsed

1000

(pF

500

200 100

50

20 10

5

2 1

COLLECTOR OUTPUT CAPACITANCE : Cob

0.1 0.2 0.5 1 2 5 10 20 50 10 COLLECTOR TO BASE VOLTAGE : V

f=1MHz I

E

=0A

Ta=25°C

2SD2537

CB

(V

Fig.10 Gain bandwidth product vs. emitter current

Fig.11 Collector output capacitance vs. collector-base voltage

Rev.C 3/3

Appendix

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Notes

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About Export Control Order in Japan

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Appendix1-Rev1.1