ROHM 2SD2671 Technical data
2SD2671
Transistors
Low frequency amplifier
2SD2671
zApplicat ion
Low frequency amplifier
Driver
zFeatures
1) A collector current is large.
2) V
At lc=1.5A / l
: max. 370mV
CE(sat)
=75mA
B
zAbsolute maximum ratings (Ta=25°C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emiter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperautre
∗1 Single pluse, Pw=1ms
∗2 Mounted on a 25
t
×25×
0.8mm Ceramic substrate
CBO
V
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Limits
30
30
6
2
4
500
∗2
1W
150
−55 to +150
zElectrical characteristics (Ta=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltae
Collector-emitter breakdown voltae BV
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
∗ Pulsed
BV
BV
I
I
CE(sat)
V
CBO
EBO
h
f
CBO
CEO
EBO
FE
T
30
30
270 − 680
Cob − 20 −
Rev.B 1/2
zExternal dimensions (Unit : mm)
TSMT3
(1) Base
(2) Emitter
(3) Collector
Unit
V
V
V
A
∗1
A
mW
°C
°C
−
V
V
V
nA VCB=30V
nA VEB=6V
− V
MHz
pF
−−
−−
6
−−
−−
−−
− 180
280
−
100
100
370 mV
2.9
0.4
(3)
(2)
(1)
0.950.95
1.9
C
=10µA
I
C
=1mA
I
E
=10µA
I
1.0MAX
0.85
0.7
2.8
1.6
0
~
0.1
0.6
~
0.3
0.16
Each lead has same dimensions
IC=1.5A, IB=75mA
CE
=2V, IC=200mA
∗
VCE=2V, IE=−200mA, f=100MHz
V
CB
=10V, IE=0A, f=1MHz
∗
Transistors
0
F
e
)
)
e
n
0
)
0
zPackaging specifications
Package
Type
2SD2671
zElectrical characteristic curves
1000
FE
100
DC CURRENT GAIN : h
Code
Basic ordering unit (Pieces)
VCE=−2V
Ta=125 C
Ta=25 C
Ta= −25 C
Pulsed
10
(V
CE(sat)
0.1
Taping
3000
IC/IB=20/1
Pulsed
1
TL
Ta= −25 C
Ta=25 C
Ta=125 C
2SD2671
10
(V
BE(sat)
Ta= −25 C
Ta=25 C
1
Ta=125 C
IC/IB=20/1
Pulsed
10
0.001 0.01 0.1 1 1
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain
vs. collector current
10
VCE=−2V
Pulsed
(A)
C
1
0.1
0.01
COLLECTOR CURRENT : I
0.001
0 1.4
0.2
0.6 0.8
0.4
BASE TO EMITTER CURRENT : VBE (V)
Fig.4 Grounded emitter propagatio
characteristics
Ta=125 C
Ta=25 C
Ta= −25 C
1
0.01
0.001 0.01 0.1 1
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : IC (A)
ig.2 Collector-emitter saturation voltag
base-emitter saturation voltage
vs. collector current
1000
100
TRANSITION FREQUENCY : fT (MHz)
1.2
10
0.01 0.1 1 1
EMITTER CURRENT : IE (A)
Fig.5 Gain bandwidth product
vs. emitter current
0.1
BASE SATURATION VOLTAGE : V
0.001 0.01 0.1 1 10
10
COLLECTOR CURRENT : IC (A)
Fig.3 Base-emitter saturation voltag
vs. collector current
Ta=25 C
VCE=−2V
f= 100MHz
1000
Cob
100
Cib
10
0.001 0.01 0.1 1 10 10
EMITTER INPUT CAPACITANCE : Cib (pF)
EMITTER TO BASE VOLTAGE : VEB (V)
COLLECTOR TO BASE VOLTAGE : V
COLLECTOR OUTPUT CAPACITANCE : Cob (pF
Fig.6 Collector output chapacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
IC=0A
f=1MHz
Ta=25 C
CB
(V)
Rev.B 2/2
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