Datasheet 2SA1952 Datasheet (ROHM)

High-speed Switching Transistor (-60V, -5A)

2SA1952

Features Dimensions (Unit : mm)

1) High speed switching. (tf : Typ. 0.15 s at I

2) Low V

CE(sat). (Typ. -0.2V at IC/IB= -3/-0.15A)

3) Wide SOA. (safe operating area)

4) Complements the 2SC5103.

Absolute maximum ratings (Ta = 25C)

Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage

Collector current

Collector power dissipation
Junction temperature

Storage temperature

V
V
V

Tstg

CBO
CEO
EBO

I

P

Tj

Limits

−100

−60

−5

C

C

−5

−10

1

10

150

−55~+150

Packaging specifications and h

Type 2SA1952

Package

h

FE

Code

Basic ordering unit (pieces)

CPT3

TL

2500

Q

FE

Electrical characteristics (Ta = 25C)

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current

Collector-emitter saturation voltage

Base-emitter saturation voltage

DC current

Transition frequency

Output capacitance
Turn-on time
Storage time
Fall time

Parameter

transfer ratio

Symbol
BV

BV
BV

V

V

Min.

CBO

−100

CEO

−60 −

EBO

−5

I

CBO

I

CE(sat)

BE(sat)

h
h

Cob

ton −−0.3 μsI

tstg −−1.5 μsI

−

EBO

−

−

−−

−−

−−

120

FE

1

40 −− −

FE

2

f

T

−

−

tf −−0.3 μsV

A(Pulse)

W(Tc=25°C)

Typ.

−

−

−

−

−

−

80

130

C = -3A)

Unit

V
V
V
A

W

°C
°C

Max.

−

−

−

−10

−10

−0.3

−0.5

−1.2

−1.5

270

−

−

Unit

V
VI
V

μA
μA

V
VI
VI
VIC/I

−

MHz

pF

C

=

I

C

=

E

=

I

CB

V
V

EB

C/IB

I

C/IB
C/IB

V

CE

V

CE
CE

V
V

CB

C

=

B1

CC

−50μA

−1mA

−50μA

=

−100V

=

−5V

=

−3A/ −0.15A

=

−4A/ −0.2A

=

−3A/ −0.15A

B

=

−4A /−0.2A

=

−2V , I

=

−2V , I

=

−10V , I

=

−10V , I

−3A , R

=

−I

B2

−30V

=

C
C

L

=

−0.15A

Conditions

=

−1A

=

−3A

E

=

0.5A , f = 30MHz

E

=

0A , f = 1MHz

10Ω

2SA1952

)

1

(
)

2

(
)

3

(

1.0

ROHM : CPT3
EIAJ : SC-63

0.5

2.3

2.3

0.8Min.

0.75

0.9

0.9

0.65

1.5

2.5

9.5

1.55.5

6.5

5.1

C0.5

0.5

2.3

(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)

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2009.12 - Rev.A

cs

A

A

F

cs

DC CURRENT GAIN : h

nt

1000

0

)

)

nt

TRANSITION FREQUENCY: f

(MHz)

nt

1000

1

COLLECTOR OUTPUT CAPACITANCE : C

(pF)

0

TURN ON TIME : t

10

0

Electrical characteristics curves

−90m

−5

(A)

C

−4

−3

−2

−1

COLLECTOR CURRENT : I

0

COLLECTOR TO EMITTER VOLTAGE : V

Fig.1 Ground emitter output characteristi

(V

(V

−10

CE(sat)

BE(sat)

−5

: V

−2

−1

−0.5

−0.2

−0.1

−0.05

−0.02

−0.01

COLLECTOR SATURATION VOLTAGE : V

BASE SATURATION VOLTAGE

−0.01

Fig.4

f(μs)

stg(μs)

on(μs)

: t

: t

0.5

0.2

0.1

STRAGE TIME

FALL TIME

0.05

0.02

0.01

−0.05 −0.2−0.1 −0.5 −1 −2 −5 −10 −20 −5

−80m

−100mA

Ta

= −25°C

25°C

100°C

V

CE(sat)

−0.02 −0.05
COLLECTOR CURRENT : I

Collector-emitter saturation voltage
Base-emitter saturation voltage

5

t

stg

2

t

on

1

t

f

COLLECTOR CURRENT : I

Tc =25

−70mA

−60mA

−50mA

−40mA

−30mA

−20mA

−10mA

B

I

I

C/IB

Pulsed

V

BE(sat)

Ta

25°C

−25°C

−0.5 −5

C (A)

vs. collector curre

IE=20

IB1= −20

C

=0A

CE

=20

=100°C

(A)

Fig.7 Switching characteristics

°C

−5−4−3−2−10

(V)

−10−2−1−0.2−0.1

I

B2

Data Sheet 2SA1952

−10

−5

Ta=100

°C

25

−2

−1

−0.5

−0.2

−0.1

−0.05

COLLECTOR CURRENT : IC (A)

−0.02

−0.01

ig.2

Ground emitter propagation characteristi

500

200

T

100

50

20
10

5

2
1

0.001 0.002 0.01 0.02 0.05 0.1 0.2 0.5

°C

−

25

°C

BASE TO EMITTER VOLTAGE : VBE

0.005

EMITTER CURRENT : I

Fig.5 Resistance ratio vs. emitter curre

V

CE

=

Pulsed

Ta=25

VCE= −10

E

(A)

−2V

(V)

V

CE

=

−2V

500

200

EF

100

50

20
10

5

2

−1.8−1.6−1.4−1.2−1.0−0.8−0.6−0.4−0.20

1

−0.01 −0.02 −0.05

=100°C

Ta

25°C

−25°C

COLLECTOR CURRENT : I

Fig.3 DC current gain vs. collector curre

10000

°C

A

ob

5000

2000
1000

500

200
100

50

20
10

−0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −10
COLLECTOR TO BASE VOLTAGE : V

Pulsed

−2−1−0.2−0.1

−0.5 −5

C

(A)

Ta=25

f

=1MHz

IE=0

A

−1

°C

CB

(V)

Fig.6 Collector output capacitance
vs. collector-base voltage

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2009.12 - Rev.A

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