ROHM 2SA1952 User Manual
High-speed Switching Transistor (-60V, -5A)
2SA1952
Features Dimensions (Unit : mm)
1) High speed switching. (tf : Typ. 0.15 s at I
2) Low V
CE(sat). (Typ. -0.2V at IC/IB= -3/-0.15A)
3) Wide SOA. (safe operating area)
4) Complements the 2SC5103.
Absolute maximum ratings (Ta = 25C)
Parameter Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
V
V
Tstg
CBO
CEO
EBO
I
P
Tj
Limits
−100
−60
−5
C
C
−5
−10
1
10
150
−55~+150
Packaging specifications and h
Type 2SA1952
Package
h
FE
Code
Basic ordering unit (pieces)
CPT3
TL
2500
Q
FE
Electrical characteristics (Ta = 25C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
Parameter
transfer ratio
Symbol
BV
BV
BV
V
V
Min.
CBO
−100
CEO
−60 −
EBO
−5
I
CBO
I
CE(sat)
BE(sat)
h
h
Cob
ton −−0.3 μsI
tstg −−1.5 μsI
−
EBO
−
−
−−
−−
−−
120
FE
1
40 −− −
FE
2
f
T
−
−
tf −−0.3 μsV
A(Pulse)
W(Tc=25°C)
Typ.
−
−
−
−
−
−
80
130
C = -3A)
Unit
V
V
V
A
W
°C
°C
Max.
−
−
−
−10
−10
−0.3
−0.5
−1.2
−1.5
270
−
−
Unit
V
VI
V
μA
μA
V
VI
VI
VIC/I
−
MHz
pF
C
=
I
C
=
E
=
I
CB
V
V
EB
C/IB
I
C/IB
C/IB
V
CE
V
CE
CE
V
V
CB
C
=
B1
CC
−50μA
−1mA
−50μA
=
−100V
=
−5V
=
−3A/ −0.15A
=
−4A/ −0.2A
=
−3A/ −0.15A
B
=
−4A /−0.2A
=
−2V , I
=
−2V , I
=
−10V , I
=
−10V , I
−3A , R
=
−I
B2
−30V
=
C
C
L
=
−0.15A
Conditions
=
−1A
=
−3A
E
=
0.5A , f = 30MHz
E
=
0A , f = 1MHz
10Ω
2SA1952
)
1
(
)
2
(
)
3
(
1.0
ROHM : CPT3
EIAJ : SC-63
0.5
2.3
2.3
0.8Min.
0.75
0.9
0.9
0.65
1.5
2.5
9.5
1.55.5
6.5
5.1
C0.5
0.5
2.3
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
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○
2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.A
cs
A
A
F
cs
DC CURRENT GAIN : h
nt
1000
0
)
)
nt
TRANSITION FREQUENCY: f
(MHz)
nt
1000
1
COLLECTOR OUTPUT CAPACITANCE : C
(pF)
0
TURN ON TIME : t
10
0
Electrical characteristics curves
−90m
−5
(A)
C
−4
−3
−2
−1
COLLECTOR CURRENT : I
0
COLLECTOR TO EMITTER VOLTAGE : V
Fig.1 Ground emitter output characteristi
(V
(V
−10
CE(sat)
BE(sat)
−5
: V
−2
−1
−0.5
−0.2
−0.1
−0.05
−0.02
−0.01
COLLECTOR SATURATION VOLTAGE : V
BASE SATURATION VOLTAGE
−0.01
Fig.4
f(μs)
stg(μs)
on(μs)
: t
: t
0.5
0.2
0.1
STRAGE TIME
FALL TIME
0.05
0.02
0.01
−0.05 −0.2−0.1 −0.5 −1 −2 −5 −10 −20 −5
−80m
−100mA
Ta
= −25°C
25°C
100°C
V
CE(sat)
−0.02 −0.05
COLLECTOR CURRENT : I
Collector-emitter saturation voltage
Base-emitter saturation voltage
5
t
stg
2
t
on
1
t
f
COLLECTOR CURRENT : I
Tc =25
−70mA
−60mA
−50mA
−40mA
−30mA
−20mA
−10mA
B
I
I
C/IB
Pulsed
V
BE(sat)
Ta
25°C
−25°C
−0.5 −5
C (A)
vs. collector curre
IE=20
IB1= −20
C
=0A
CE
=20
=100°C
(A)
Fig.7 Switching characteristics
°C
−5−4−3−2−10
(V)
−10−2−1−0.2−0.1
I
B2
Data Sheet 2SA1952
−10
−5
Ta=100
°C
25
−2
−1
−0.5
−0.2
−0.1
−0.05
COLLECTOR CURRENT : IC (A)
−0.02
−0.01
ig.2
Ground emitter propagation characteristi
500
200
T
100
50
20
10
5
2
1
0.001 0.002 0.01 0.02 0.05 0.1 0.2 0.5
°C
−
25
°C
BASE TO EMITTER VOLTAGE : VBE
0.005
EMITTER CURRENT : I
Fig.5 Resistance ratio vs. emitter curre
V
CE
=
Pulsed
Ta=25
VCE= −10
E
(A)
−2V
(V)
V
CE
=
−2V
500
200
EF
100
50
20
10
5
2
−1.8−1.6−1.4−1.2−1.0−0.8−0.6−0.4−0.20
1
−0.01 −0.02 −0.05
=100°C
Ta
25°C
−25°C
COLLECTOR CURRENT : I
Fig.3 DC current gain vs. collector curre
10000
°C
A
ob
5000
2000
1000
500
200
100
50
20
10
−0.1 −0.2 −0.5 −1 −2 −5 −10 −20 −50 −10
COLLECTOR TO BASE VOLTAGE : V
Pulsed
−2−1−0.2−0.1
−0.5 −5
C
(A)
Ta=25
f
=1MHz
IE=0
A
−1
°C
CB
(V)
Fig.6 Collector output capacitance
vs. collector-base voltage
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○
2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.A
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