ROHM 2SA1900 Schematic [ru]

2SA1900

Transistors

Medium power transistor (−50V, −1A)

2SA1900

zFeatures

1) Low saturation voltage, typically V
IB =

−500mA / −50mA

2) P

=2W (on 40×40×0.7mm ceramic board)

C

CE(sat)

3) Complements the 2SC5053

z Absolute maximum ratings (Ta=25°C)

Parameter
Collector-base voltage
Collector-emitter voltage
Emitter- base voltage

Collector current

Collector power dissipation
Collector power dissipation

Storage temperature

∗1 Pw=20ms, Duty=1/2
∗2 When mounted on a 40 40 0.7mm seramic board.

+

Symbol Limits

V

CBO

V

CEO

V

EBO

I

C

P

C

t

j

t

stg

+

zElectrical characteristics (T a=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

BV

Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance Cob

BV
BV

V

CBO
CEO

EBO

I

CBO

I

EBO

CE(sat)

h

FE

f

T

zPackaging specifications and hFE

Type

Package

h

FE

Marking AL

Basic ordering unit (pleces)

∗ Denotes

Code

h

FE

2SA1900

MPT3

Q

∗

T100
1000

=

−0.15V at IC /

−60

−50

−5

−1

−2

0.5
2

150

−55 to +150

−60

−50

−5

−

−

−

120

−

−

zDimensions (Unit : mm)

MPT3

(1)Base
(2)Collector
(3)Emitter

Unit

V
V
V
A

A (Pulse)

∗1

W
W

∗2

°C
°C

−

−

V

−

V

−

V

µA
µA

V

−

−

MHz

−

pF

150

20

−

−

−

−0.1

−

−0.1

−

−0.4

−

270

C

=

−50µA

I
I

C

=

−1mA

E

=

−50µA

I

CB

=

−40V

V

EB

=

−4V

V

C/IB

=

−500mA/−50mA

I
V

CE/IC

=

−3V/−0.5A

V

CE

=

−5V , IE =

V

CB

=

−10V , IE =

50mA , f=100MHz

0A , f=1MHz

Rev.C 1/2

Transistors

zElectric characteristics curves

−1.0

−0.8

(A)

C

−0.6

−0.4

−0.2

COLLECTOR CURRENT : I

8mA

−

−

9mA

−

10mA

0

−

1

0

−

−2−3−4−

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.1 Grounded emitter output characteristics

1000

500

(MHz)

T

200
100

50

20
10

5

TRANSITION FREQUENCY : f

2
1

EMITTER CURRENT : I

Fig.4 Gain bandwith product

vs. emitter current

7mA

−

6mA

Ta=25°C

5mA

−

Ta=25°C
V

E

(A)

−

−3mA

B

I

CE

4mA

−2mA

=−1mA

=

−5V

5

10.1 0.2 0.510m 20m 50m1m 2m 5m

1000

500

FE

200
100

50

20
10

5

DC CURRENT GAIN : h

2
1

−0.01 −0.1−0.001 −1 −2

Ta=25°C

VCE=−3V

COLLECTOR CURRENT : IC (A)

Fig.2 DC current gain

vs. collector current

1000

(pF)

500

ob(

200
100

50

20
10

5

2
1

COLLECTOR OUTPUT CAPACITANCE : C

−0.1 −1 −100−10

COLLECTOR TO BASE VOLTAGE : VCB (V)

Ta=25°C
f=1MHz
IE=0A

Fig.5 Collector output capacitance
vs. collector-base voltage

2SA1900

−1000

Ta=25°C
I

C/IB

=10

(mV)

−500

CE(sat)

−200

−100

−50

−20

−10

−5

−2

−1

COLLECTOR SATURATION VOLTAGE : V

COLLECTOR CURRENT : IC (A)

Fig.3 Collector-emitter saturation voltage
vs.collector current

−10

−5

I

C Max.

(A)

C

−0.5

−0.2

−0.1

−0.05

COLLECTOR CURRENT : I

−0.02

−0.01

(Pulse∗)

−2

−1

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.6 Safe operating area

−100m−1m −10m −1 −2

Ta=25°C

∗Single

nonrepeatitive pulse

Pw

100ms

=

10ms

∗

∗

DC

−1 −10−0.1 −100

Rev.C 2/2