2SA1900
Transistors
Medium power transistor (−50V, −1A)
2SA1900
zFeatures
1) Low saturation voltage, typically V
IB =
−500mA / −50mA
2) P
=2W (on 40×40×0.7mm ceramic board)
C
CE(sat)
3) Complements the 2SC5053
z Absolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter- base voltage
Collector current
Collector power dissipation
Collector power dissipation
Storage temperature
∗1 Pw=20ms, Duty=1/2
∗2 When mounted on a 40 40 0.7mm seramic board.
+
Symbol Limits
V
CBO
V
CEO
V
EBO
I
C
P
C
t
j
t
stg
+
zElectrical characteristics (T a=25°C)
Parameter Symbol Min. Typ. Max. Unit Conditions
BV
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance Cob
BV
BV
V
CBO
CEO
EBO
I
CBO
I
EBO
CE(sat)
h
FE
f
T
zPackaging specifications and hFE
Type
Package
h
FE
Marking AL
Basic ordering unit (pleces)
∗ Denotes
Code
h
FE
2SA1900
MPT3
Q
∗
T100
1000
=
−0.15V at IC /
−60
−50
−5
−1
−2
0.5
2
150
−55 to +150
−60
−50
−5
−
−
−
120
−
−
zDimensions (Unit : mm)
MPT3
(1)Base
(2)Collector
(3)Emitter
Unit
V
V
V
A
A (Pulse)
∗1
W
W
∗2
°C
°C
−
−
V
−
V
−
V
µA
µA
V
−
−
MHz
−
pF
150
20
−
−
−
−0.1
−
−0.1
−
−0.4
−
270
C
=
−50µA
I
I
C
=
−1mA
E
=
−50µA
I
CB
=
−40V
V
EB
=
−4V
V
C/IB
=
−500mA/−50mA
I
V
CE/IC
=
−3V/−0.5A
V
CE
=
−5V , IE =
V
CB
=
−10V , IE =
50mA , f=100MHz
0A , f=1MHz
Rev.C 1/2
Transistors
zElectric characteristics curves
−1.0
−0.8
(A)
C
−0.6
−0.4
−0.2
COLLECTOR CURRENT : I
8mA
−
−
9mA
−
10mA
0
−
1
0
−
−2−3−4−
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Grounded emitter output characteristics
1000
500
(MHz)
T
200
100
50
20
10
5
TRANSITION FREQUENCY : f
2
1
EMITTER CURRENT : I
Fig.4 Gain bandwith product
vs. emitter current
7mA
−
6mA
Ta=25°C
5mA
−
Ta=25°C
V
E
(A)
−
−3mA
B
I
CE
4mA
−2mA
=−1mA
=
−5V
5
10.1 0.2 0.510m 20m 50m1m 2m 5m
1000
500
FE
200
100
50
20
10
5
DC CURRENT GAIN : h
2
1
−0.01 −0.1−0.001 −1 −2
Ta=25°C
VCE=−3V
COLLECTOR CURRENT : IC (A)
Fig.2 DC current gain
vs. collector current
1000
(pF)
500
ob(
200
100
50
20
10
5
2
1
COLLECTOR OUTPUT CAPACITANCE : C
−0.1 −1 −100−10
COLLECTOR TO BASE VOLTAGE : VCB (V)
Ta=25°C
f=1MHz
IE=0A
Fig.5 Collector output capacitance
vs. collector-base voltage
2SA1900
−1000
Ta=25°C
I
C/IB
=10
(mV)
−500
CE(sat)
−200
−100
−50
−20
−10
−5
−2
−1
COLLECTOR SATURATION VOLTAGE : V
COLLECTOR CURRENT : IC (A)
Fig.3 Collector-emitter saturation voltage
vs.collector current
−10
−5
I
C Max.
(A)
C
−0.5
−0.2
−0.1
−0.05
COLLECTOR CURRENT : I
−0.02
−0.01
(Pulse∗)
−2
−1
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.6 Safe operating area
−100m−1m −10m −1 −2
Ta=25°C
∗Single
nonrepeatitive pulse
Pw
100ms
=
10ms
∗
∗
DC
−1 −10−0.1 −100
Rev.C 2/2
Appendix
Notes
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Appendix1-Rev2.0
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