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Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
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Renesas Electronics website: http://www.renesas.com
April 1
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
st
, 2010
Send any inquiries to http://www.renesas.com/inquiry
.
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2SK3000
Silicon N Channel MOS FET
Low Frequency Power Switching
Features
• Low on-resistance
R
= 0.16 Ω typ. (V
DS(on)
• 4 V gate drive devices.
• Small package (MPAK)
• Expansive drain to source surge power capability
Outline
= 10 V, ID = 450 mA)
GS
REJ03G0379-0300Z
(Previous ADE-208-585A (Z))
Rev.3.00
Jun.15.2004
MPAK
G
2
D
3
3
1
1
S
2
1. Source
2. Gate
3. Drain
Note: Marking is “ZY–”.
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Reverse drain current I
Channel dissipation Pch
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. When using the glass epoxy board (10 mm x 10 mm x 1 mm
D(pulse)
DSS
GSS
D
DR
Note2
Note1
t
)
40 V
±10 V
1.0 A
4.0 A
1.0 A
400 mW
Rev.3.00, Jun.16.2004, page 1 of 6
2SK3000
Electrical Characteristics
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
Drain to source voltage V
Gate to source breakdown voltage V
Zero gate voltage drain current I
Gate to source leak current I
Gate to source cutoff voltage V
(BR)DSS
DS(SUS)
(BR)GSS
DSS
GSS
GS(off)
Forward transfer admittance |yfs|0.51.2— SI
Static drain to source on state
resistance
R
R
DS(on)
DS(on)
Input capacitance Ciss — 14.0 — pF
Output capacitance Coss — 68 — pF
Reverse transfer capacitance Crss — 3.0 — pF
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
d(on)
r
d(off)
f
Notes: 3. Pulse test
40 — 60 V ID = 100 µA, VGS = 0
40 — — V L = 100 µH, ID = 3 A
±10 — — V IG = ±100 µA, VDS = 0
——1.0µAVDS = 40 V, VGS = 0
——±5 µAVGS = ±6.5V, VDS = 0
1.1 — 2.1 V ID = 10 µA, VDS = 5 V
= 450 mA, VDS = 10 V
D
— 0.24 0.5 Ω ID = 450 mA, VGS = 4V
— 0.16 0.3 Ω ID = 450 mA, VGS = 10 V
VDS = 10 V
= 0
V
GS
f = 1 MHz
—0.12— µs
—0.6—µs
VGS = 4 V, ID = 450 mA
= 22 Ω
R
L
—1.7—µs
—1.4—µs
(Ta = 25°C)
Note3
Note3
Note3
Rev.3.00, Jun.16.2004, page 2 of 6
2SK3000
Main Characteristics
Power vs. Temperature Derating
0.8
0.6
0.4
0.2
Channel Dissipation Pch (W)
0
50 100 150 200
Ambient Temperature Ta (°C)
5.0
4.0
D
Typical Output Characteristics
10 V
6 V
5 V
4 V
4.5 V
3.0
3.5 V
2.0
Pulse Test
Maximum Safe Operation Area
5
0.1 ms
2
1
D
0.5
0.2
0.1
0.05
Operation in
Drain Current I (A)
this area is
0.02
limited by R
0.01
Ta = 25°C
0.05
0.2 0.5 2 5 20
PW = 100 ms (1 shot)
DC Operation
DS(on)
11050
1 ms
10 ms
Note4
Drain to Source Voltage V (V)
Note4 : When using the glass epoxy board
(10mm x 10mm x 1mm )
Typical Transfer Characteristics
10
1
D
100m
125°C
25°C
Tc = –25°C
10m
50 µs
100 200
DS
t
Drain Current I (A)
1.0
V = 2.5 V
0
246810
3 V
GS
Drain to Source Voltage V (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
1.0
0.8
DS(on)
V (V)
0.6
0.4
0.2
Drain to Source Saturation Voltage
0
48
12
Drain Current I (A)
1m
100µ
0
DS
Gate to Source Voltage V
Static Drain to Source on State Resistance
Pulse Test
10
Pulse Test
3
1
DS(on)
R ( )Ω
0.3
I = 2 A
D
1 A
0.45 A
16 20 0.01 10.1
0.1
0.03
Drain to Source On State Resistance
0.01
0.03 0.3 3
V = 5 V
DS
Pulse Test
12345
(V)
GS
vs. Drain Current
V = 4 V
GS
10 V
10
Rev.3.00, Jun.16.2004, page 3 of 6
2SK3000
Static Drain to Source on State Resistance
0.5
0.4
DS(on)
R (Ω)
0.3
V
0.2
0.1
0
–40 0 40 80 120 160
Static Drain to Source on State Resistance
vs. Temperature
= 4 V
GS
10 V
ID = 0.45 A
0.45 A
Pulse Test
Case Temperature Tc (°C)
Typical Capacitance vs.
Drain to Source Voltage
500
200
100
V = 0
f = 1 MHz
Coss
GS
50
20
Ciss
10
Capacitance C (pF)
5
Crss
2
1
048121620
Drain to Source Voltage V (V)
DS
Forward Transfer Admittance vs.
Drain Current
10
fs
5
Tc = –25°C
2
1
25°C
75°C
0.5
0.2
Forward Transfer Admittance |y | (S)
0.1
V = 10 V
DS
Pulse Test
0.1 0.2 0.5 1 2 10
Drain Current I (A)
D
Switching Characteristics
5000
t
2000
1000
d(off)
t
f
t
r
500
200
Switching Time t (ns)
100
50
0.05
t
d(on)
V = 4 V, V = 10 V
GS
DD
PW = 5 µs, duty < 1 %
0.50.20.1
1
Drain Current I (A)
D
5
52
Drain to Source DiodeReverse Surge
Destruction Characteristics
500
200
100
50
20
Applied Power Ps (W)
10
5
0.05 1
0.50.20.1
Surge Pulse Width PW (mS)
Ta = 25°C
1 shot
10525020
Reverse Drain Current vs.
Source to Drain Voltage
5
10 V
5 V
V = 0
4
DR
3
2
1
Reverse Drain Current I (A)
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V (V)
GS
Pulse Test
SD
Rev.3.00, Jun.16.2004, page 4 of 6
2SK3000
Transient Thermal Resistance
1000
300
100
θ j–a (°C/W)
30
10
Thermal Resistance
3
1
1 m
Switching Time Test Circuit Switching Time Waveforms
Vin Monitor
Vin
50Ω
4 V
Condition :
Ta = 25°C
When using the glass epoxy board
(10mm x 10mm x 1mm )
t
10 m 100 m 1 10 100 1000
Pulse Width PW (S)
Vout
D.U.T.
R
L
V
DD
= 10 V
Monitor
Vin
Vout
td(on)
10%
10%
90%
tr
td(off)
90%
10%
90%
t
f
Rev.3.00, Jun.16.2004, page 5 of 6
2SK3000
Package Dimensions
As of January, 2003
Unit: mm
0.4
+ 0.10
– 0.05
0.95
1.9 ± 0.2
0.95
0.65
+ 0.2
– 0.6
2.8
1.5 ± 0.15
0.65
+ 0.10
0.16
– 0.06
0 – 0.1
2.95 ± 0.2
0.3
+ 0.2
– 0.1
1.1
Package Code
JEDEC
JEITA
(reference value)
Mass
MPAK(T)
—
Conforms
0.011 g
Ordering Information
Part Name Quantity Shipping Container
2SK3000 3000 pcs φ178 mm Reel Taping (T L)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.3.00, Jun.16.2004, page 6 of 6
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
m
C
.0
Keep safety first in your circuit designs!
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