Page 1
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6121
2SK2919
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· On-chip high-speed diode (trr=100ns).
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)esluP(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
D
D
Package Dimensions
unit:mm
2128
[2SK2919]
8.2
7.8
0.4
4.2
2.5
SSD
SSG
PD
Tc=25°C
6.2
0.2
3
8.4
1.2
2
1.0
2.54
6.2
1.0
2.54
1
5.08
10.0
6.0
10.0
0.6
0.7
0.3
0.6
7.8
5.2
1 : Gate
2 : Source
3 : Drain
SANYO : ZP
006V
03±V
2A
8A
53W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatSR
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
I
SSD)RB(
D
V
SSD
V
SSG
V
)ffo(SG
V
)no(SD
V,Am01=
0=006V
SG
V,V084=
SD
SG
SD
SG
SD
SD
SD
0=0.1Am
SG
V,V03±=
0=001±An
SD
I,V01=
Am1=0.20.3V
D
A1=8.05.1S
D
I,V01=
A1=2.33.4
D
zHM1=f,V02=004Fp
zHM1=f,V02=55Fp
zHM1=f,V02=51Fp
nimpytxam
Note ) Be careful in handling the 2SK2919 because it has no protection diode between Gate-to-Source. Continued on next page.
21400TS (KOTO) TA-2283 No.6121–1/4
sgnitaR
tinU
Ω
Page 2
2SK2919
Continued from preceding page.
retemaraPlobmySsnoitidnoC
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egatloVdrawroFedoiDV
emityrevoceresreveRedoiDt
)no(d
r
)ffo(d
f
I
V,A2=
DS
S
rr
0=5.1V
SG
Switching Time Test Circuit
tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS21sn
tiucriCtseTdeificepseeS56sn
tiucriCtseTdeificepseeS04sn
sµA001=td/id,A2=SI001sn
sgnitaR
nimpytxam
tinU
5
4
–A
D
3
10V
0V
P.G
V
GS
PW=1µs
D.C.≤0.5%
V
GS
G
50Ω
ID-
VDD=200V
D
S
V
DS
ID=1A
RL=200Ω
2SK2919
10V
V
OUT
6.0V
5.5V
5.0V
2
Drain Current, I
1
4.5V
4.0V
VGS=3.5V
0
048121620
Drain-to-Source Voltage, VDS–V
y
|
fs
|
-
I
5
3
2
fs|–S
y
25°C
1.0
7
5
3
2
Tc=
-
75°C
D
VDS=10V
25°C
ID-
3.6
VDS=10V
3.2
2.8
2.4
–A
D
2.0
1.6
1.2
Drain Current, I
0.8
0.4
0
02468 141210
V
Gate-to-Source Voltage, VGS–V
-
– Ω
DS(on)
R
6
5
4
3
2
DS(on)
GS
V
GS
Tc=
25°C
-
25°C
75°C
I
D
Tc=25°C
=2A
1A
0.5A
Forward Transfer Admittance, |
0.1
7
5
57
0.1
23
75231075
1.0
Drain Current, ID–A
1
Static Drain-to-Source
On-State Resistance, R
0
02468 141210
Gate-to-Source Voltage, VGS–V
No.6121–2/4
Page 3
– Ω
DS(on)
7
6
5
4
ID=1A
R
DS(on)
2SK2919
ID-
-
Tc
=10V
GS
V
=20V
GS
V
5
4
–A
3
D
Tc
VDS=10V
VGS=10V
3
2
1
Static Drain-to-Source
On-State Resistance, R
0
-60 -40 -20 0 20 80 100 120 140 1606040
Case Temperature, Tc – ˚C Case Temperature, Tc – ˚C
5
4
–V
3
GS(off)
2
1
Cutoff Voltage, V
0
-60 -40 -20 0 20 80 100 120 140 1606040
V
GS(off)
-
Tc
VDS=10V
Case Temperature, Tc – ˚C
5
3
2
1000
7
5
3
2
100
7
5
Ciss, Coss, Crss – pF
3
2
10
7
5
0 4 8 121620242832
Ciss,Coss,Crss
-
V
DS
VGS=0
Drain-to-Source Voltage, VDS–V
I
D
23 57
A S O
100ms
DC operation
10ms
1ms
100µs
23 5723 57
<1µs
10µs
2
I
10
DP
7
5
3
2
–A
D
1.0
,I
7
5
Operation in this area
3
is limited by RDS(on).
2
Drain Current
0.1
7
5
Tc=25°C
3
Single pulse
2
10 100
Drain-to-Source Voltage, VDS–V
ID=1mV
f=1MHz
Ciss
Coss
Crss
1000
2
Drain Current, I
1
0
-60 -40 -20 0 20 80 100 120 140 1606040
IF-
V
2
10
7
5
–A
3
F
2
1.0
7
5
3
2
0.1
7
Diode Forward Current, I
5
3
2
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Tc=75
SD
°C
25°C
25°C
-
Diode Forward Voltage, VSD–V
1000
7
5
3
2
100
7
5
3
2
10
7
Switching Time, SW Time – ns
5
3
2
57 23 57 23 5
0.1 1.0
40
35
–W
D
30
20
10
SW Time
Drain Current, ID–A
P
-
I
D
VDD=200V
VGS=10V
P.W=1µs
D.C≤0.5%
t
d(off)
t
f
t
r
t
d(on)
-
D
Tc
Allowable Power Dissipation, P
0
0 20 40 60 80 120100 140 160
Case Temperature, Tc – ˚C
No.6121–3/4
Page 4
2SK2919
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of February, 2000. Specifications and information herein are subject
to change without notice.
PS No.6121–4/4
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