Page 1
Transistor
2.5V Drive Nch MOS FET
2SK3018
zStructure
Silicon N-channel
MOSFET
zApplica tions
Interfacing, switching (30V, 100mA)
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Low voltage drive ( 2.5V) makes this device ideal for
portable equipment.
4) Drive circuits can be simple.
5) Parallel use is easy.
zPackaging specifications
Type
2SK3018
Package
Code
Basic ordering unit
(pieces)
Taping
T106
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature
1 Pw≤10µs, Duty cycle≤1%
∗
2 With each pin mounted on the recommended lands.
∗
Continuous
Pulsed
Symbol Limits Unit
DSS
V
VGSS
D
1
∗
IDP
2
∗
PD
Tch
Tstg °C−55 to +150
30 V
±20
±100I
200
150
zThermal resistance
Parameter
Channel to ambient
∗ With each pin mounted on the recommended lands.
Symbol Limits Unit
Rth(ch-a)
∗
zExternal dimensions (Unit : mm)
UMT3
(1) Source
(2) Gate
(3) Drain
V
mA
mA±400
mW
°C
625
°C / W
2SK3018
2.0
0.3
(3)
(1)
(2)
0.65
0.65
1.3
Abbreviated symbol : KN
zEquivalent circuit
Gate
A protection diode is included between the gate
∗
and the source terminals to protect the diode
against static electricity when the product is in use.
Use a protection circuit when the fixed voltages
are exceeded.
0.9
0.7
0.2
2.1
1.25
0.15
0.1Min.
Each lead has same dimensions
Gate
∗
Protection
Diode
Drain
Source
Rev.B 1/3
Page 2
Transistor
zElectrical characteristics (Ta=25°C)
Parameter Symbol
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain curren
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
zElectrical characteristic curves
GSS
I
V
(BR)DSS
I
DSS
t
V
GS(th)
R
DS(on)
R
DS(on)
|Y
fs
C
iss
oss
C
C
rss
t
d(on)
r
t
d(off)
t
f
t
Typ. Max. Unit Conditions
Min.
−
−
30
0.8
−
−
−
−
5
−
− 713
|
20
−
13
−
9
−
4
−
− 15 − ID = 10mA, VDD 5Vns
− 35 − VGS = 5Vns
− 80 − RL = 500Ωns
− 80 − RG = 10Ωns
±1
1.5
−
1
8
−
−
−
−
GS
µAV
V
I
D
= 10µA, VGS = 0V
µA
V
DS
V
DS
V
Ω
I
D
= 10mA, VGS = 4V
Ω
I
D
= 1mA, VGS = 2.5V
mS
DS
V
pF
V
DS
pF
GS
V
pF
f = 1MHz
2SK3018
= ±20V, VDS = 0V
= 30V, VGS = 0V
= 3V, ID = 100µA
= 3V, ID = 10mA
= 5V
= 0V
0.15
(A)
D
0.1
0.05
DRAIN CURRENT : I
4V
0
012345
DRAIN-SOURCE VOLTAGE : VDS (V)
3.5V
3V
2.5V
2V
VGS=1.5V
Ta=25°C
Pulsed
Fig.1 Typical output characteristics
50
Ta=125
20
(on) (Ω)
DS
10
5
2
1
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0.5
0.001
Fig.4 Static drain-source on-state
resistance vs. drain current ( Ι )
°C
75
°C
25
°C
−25
°C
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5
DRAIN CURRENT : ID (A)
V
Pulsed
200m
VDS
=3V
100m
Pulsed
50m
(A)
D
20m
10m
5m
2m
1m
0.5m
DRAIN CURRENT : I
0.2m
0.1m
04
1
GATE-SOURCE VOLTAGE : VGS (V)
Fig.2 Typical transfer characteristics
50
GS
=4V
(Ω)
(on)
DS
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
Fig.5 Static drain-source on-state
Ta=125°C
20
10
5
2
1
0.5
0.001
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5
DRAIN CURRENT : ID (A)
resistance vs. drain current (ΙΙ)
75°C
25°C
−25°C
Ta=125°C
75°C
25°C
−25°C
2
3
V
GS
Pulsed
=2.5V
2
(V)
GS(th)
1.5
1
0.5
GATE THRESHOLD VOLTAGE : V
0
−25 25 50 75 100 125 150
−50 0
CHANNEL TEMPERATURE : Tch (°C)
Fig.3 Gate threshold voltage vs.
channel temperature
15
(on) (Ω)
DS
10
5
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0
0 5 10 15 20
GATE-SOURCE VOLTAGE : VGS (V)
Fig.6 Static drain-source
on-state resistance vs.
gate-source voltage
ID=0.1A
ID=0.05A
VDS
D
=0.1mA
I
Pulsed
Ta=25°C
Pulsed
=3V
Rev.B 2/3
Page 3
Transistor
9
8
(Ω)
7
(on)
DS
6
5
4
3
2
1
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
0
Fig.7 Static drain-source on-state
ID=100mA
−50 0 25 150
−25 50 75 100 125
CHANNEL TEMPERATURE : Tch (°C)
resistance vs. channel
temperature
ID=50mA
VGS=4V
Pulsed
200m
(A)
100m
DR
50m
20m
10m
V
GS
=4V
5m
2m
1m
0.5m
REVERSE DRAIN CURRENT : I
0.2m
0.1m
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.10 Reverse drain current vs.
source-drain voltage ( ΙΙ )
0V
Ta=25
°C
Pulsed
10.50
1.5
zSwitching characteristics measurement circuit
0.5
0.2
0.1
0.05
0.02
0.01
0.005
FORWARD TRANSFER
ADMITTANCE : |Yfs| (S)
0.002
0.001
0.0002 0.0005 0.001 0.002 0.005 0.01 0.02 0.05
0.0001
Fig.8 Forward transfer
50
20
10
5
2
CAPACITANCE : C (pF)
1
0.5
0.1
0.2 0.5 1 2 5 10 20 50
DRAIN-SOURCE VOLTAGE : V
Fig.11 Typical capacitance vs.
V
DS
Pulsed
Ta=−25
°C
25
°C
75
°C
125
°C
DRAIN CURRENT : ID (A)
0.1 0.2 0.5
admittance vs. drain current
Ta
=25
f=1MH
VGS=0V
Ciss
Coss
Crss
DS
(V)
drain-source voltage
Pulse width
200m
=3V
(A)
100m
DR
50m
20m
10m
5m
2m
1m
0.5m
REVERSE DRAIN CURRENT : I
0.2m
0.1m
Fig.9 Reverse drain current vs.
1000
°C
Z
500
200
100
50
20
t
10
SWITCHING TIME : t (ns)
5
2
0.1
Fig.12 Switching characteristics
2SK3018
V
Pulsed
Ta=125°C
75°C
25°C
−25°C
10.50
SOURCE-DRAIN VOLTAGE : VSD (V)
source-drain voltage ( Ι )
t
f
t
d(off)
t
r
d(on)
0.2 0.5 1 2 5 10 20 50
DRAIN CURRENT : ID (mA)
(See Figures 13 and 14 for
the measurement circuit
and resultant waveforms)
Ta
V
V
R
Pulsed
GS
=25°C
DD
GS
G
=10Ω
=0V
=5V
=5V
1.5
100
90%
t
d(off)
50%
10%
90%
t
f
t
off
V
GS
R
G
D.U.T.
D
I
V
DS
R
L
V
DD
Fig.13 Switching time measurement circuit
V
V
50%
GS
10%
DS
10%
90%
t
r
t
d(on)
t
on
Fig.14 Switching time waveforms
Rev.B 3/3
Page 4
Appendix
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Notes
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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