Datasheet 2SK3065 Datasheet (ROHM)

Transistors

Small switching (60V, 2A)

2SK3065

Features

!

1) Low on resistance.

2) High-speed switching.

3) Optimum for a pocket resource etc. because of undervoltage actuation (2.5V actuation).

4) Driving circuit is easy.

5) Easy to use parallel.

6) It is strong to an electrostatic discharge.

Structure

!

Silicon N-channel MOS FET transistor

Absolute maximum ratings

!

Parameter Drain-source voltage Gate-source voltage

Drain current

Reverse drain current

Total power dissipation(Tc=25°C) Channel temperature Storage temperature

∗1 Pw ≤ 10µs, Duty cycle ≤ 1% ∗2 When mounted on a 40 × 40 × 0.7 mm alumina board.

Continuous Pulsed Continuous Pulsed

(Ta = 25°C)

Symbol Limits Unit

1

∗

1

60 V

±20

2I

2 8

0.5

∗

2

150

DSS

V V

GSS

D

∗

I

DP

I

DR

I

DRP

P

D

Tch

Tstg °C−55∼+150

External dimensions

!

ROHM EIAJ : SC-62

: MPT3

Internal equivalent circuit

!

(Units : mm)

0.5±0.1

−0.1

+0.2

+0.5

−0.3

2.5

4.0

0.4±0.1

1.5±0.1

1.0±0.3

Abbreviated symbol : KE

4.5

1.6±0.1

0.5±0.1

3.0±0.2

+0.2

−0.1

1.5±0.1

(3)(2)(1)

0.4±0.1

1.5±0.1

Drain

+0.1

0.4

−0.05

(1) Gate (2) Drain (3) Source

V A A8 A

Gate

A

W

°C

∗ A protection diode has been built in between the

gate and the source to protect against static electricity when the product is in use. Use the protection circuit when rated voltages are exceeded.

∗Gate Protection Diode

Source

Electrical characteristics

!

Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state

resistance Forward transfer admittance

Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time

Pw ≤ 300µs, Duty cycle ≤ 1%

∗

(Ta = 25°C)

Symbol

GSS

I

V

(BR)DSS

I

DSS

V

GS(th)

R

DS(on)

R

DS(on)

Yfs

∗

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Min.

−

60

−

0.8

−

1.5

−

Typ.

Max.

±10

−

−−

−

10

−

1.5

0.25

0.32

0.45 I

0.35

−

160

85

−

25

−

20

−

50

−

120

−

70

−

Unit

µA

Ω Ω

S pF pF pF

ns

V

GS

= ±20V, V

V

D

= 1mA, V

I V

DS

= 60V, V

V

DS

= 10V, ID = 1mA

I

D

= 1A, V

D

= 1A, V

I

D

= 1A, V

V

DS

= 10V

V

GS

= 0V

= 1MHz

f I

D

= 1A, V

V

GS

= 4V

R

L

= 30Ω

R

G

= 10Ω

Test Conditions

DS

= 0V

GS

= 0V

GS

= 0V

GS

= 4V

GS

= 2.5V

DS

= 10V

DD

30V

Transistors

Packaging specifications

!

2SK3065

Package Code

Type

Basic ordering unit (pieces)

2SK3065

Electrical characteristic curves

!

3

(W)

D

When mounted on a 40 x 40 x 0.7 mm aluminum-ceramic board.

2

1

TOTAL POWER DISSIPATION : P

0

0 25 50 75 100 125 150 175

AMBIENT TEMPERATURE : Ta(°C)

Fig.1 Total Power Dissipation vs.

Case Temperature

Taping

T100 1000

10

Operating in this area is limited by

DS(on)

R

1

(A)

D

0.1

0.01

DRAIN CURRENT : I

Ta=25°C Single Pulsed

0.001

0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS(V)

Pw=10ms

DC OPERATION

Fig.2 Maximum Safe Operating Area

100µs

1ms

2

4V

3.5V 3V

2.5V

1

DRAIN CURRENT : ID(A)

0

0510

DRAIN-SOURCE VOLTAGE : VDS(V)

2V

VGS=1.5V

Ta=25°C Pulsed

Fig.3 Typical Output Characteristics

10

(A)

D

1

DRAIN CURRENT : I

0.1 054

GATE THRESHOLD VOLTAGE : VGS(th)(V)

Ta=−25°C

25°C 75°C

125°C

321

VDS=10V Pulsed

Fig.4 Typical Transfer Characteristics

4

(th)(V)

GS

3

2

1

GATE THRESHOLD VOLTAGE : V

0

−50 150100

−25

CHANNEL TEMPERATURE : Tch(°C)

Fig.5 Gate Threshold Voltage vs.

Channel Temperature

10mA

ID=1mA

50250

VDS=10V

75

125

10

Ω)

(on)(

DS

1

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

0.1

0.01 10

Fig.6 Static Drain-Source On-

0.1

DRAIN CURRENT : I

State Resistance vs. Drain Current(Ι

Ta=125°C

−25°C

1

)

75°C 25°C

D

(

A)

V

GS

Pulsed

=4V

Transistors

2SK3065

10

(on)(Ω)

DS

Ta=125°C

1

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

0.1

0.01 10

Fig.7 Static Drain-Source On-

10

1

0.1

DRAIN CURRENT : I

State Resistance vs. Drain Current(ΙΙ)

Ta=−25°C

25°C

−25°C

1

125°C

75°C

V

Pulsed

75°C 25°C

D

(A)

V

DS

Pulsed

GS

=10V

=2.5V

1

0.75

DS(on)(Ω)

0.5

0.25

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

0

020

10

(A)

DR

1

0.1

Ta=25°C Pulsed

2A

ID=1A

5

GATE-SOURCE VOLTAGE : VGS(V)

Fig.8 Static Drain-Source On-

10 15

State Resistance vs. Gate-Source Voltage

Ta=125°C

75°C 25°C

−25°C

V

GS

Pulsed

=4V

1

(on)(Ω)

DS

0.5

STATIC DRAIN-SOURCE

ON-STATE RESISTANCE : R

0

−50 150100

CHANNEL TEMPERATURE : Tch(°C)

Fig.9 Static Drain-Source On-

10

(A)

DR

1

0.1

−25

State Resistance vs. Channel Temperature

50250

4V

VGS=0V

V

GS

=4V

Pulsed

2A

ID=1A

75

125

Ta=25°C Pulsed

FORWARD TRANSFER ADMITTANCE : | Yfs |(S)

0.1

0.01 10

Fig.10 Forward Trasfer Admitance vs.

1000

100

10

CAPACITANCE : C(pF)

1

0 100

Fig.13 Typical Capacitance vs.

0.1

DRAIN CURRENT : I

Drain Current

DRAIN-SOURCE VOLTAGE : VSD(V)

Drain-Source Voltage

1

D

(A)

VGS=0V f=1MH

Ta=25

C

iss

C

oss

C

rss

10

REVERSE DRAIN CURRENT : I

0.01 0 1.6

0.4

SOURCE-DRAIN VOLTAGE : V

Fig.11 Reverse Drain Current vs.

1000

Z

°C

100

tf

SWITCHING TIME : t(ns)

10

0.1 10

DRAIN CURRENT : I

Fig.14 Switching Characteristics

(a measurement circuit diagram Fig.17 , it refers 18 times)

0.8

Source-Drain Voltage(Ι)

td(off)

tr

td(on)

1

V V

RG=10Ω Ta=25 Pulsed

D

(A)

1.2

DD GS

SD

=4V

(V)

30V

°C

REVERSE DRAIN CURRENT : I

0.01 0 1.6

0.4

SOURCE-DRAIN VOLTAGE : V

Fig.12 Reverse Drain Current vs.

1000

100

REVERSE RECOVERY TIME : trr(ns)

10

0.1 10

REVERSE DRAIN CURRENT : I

Fig.15 Reverse Recovery Time vs.

Reverse Drain Current

0.8

Source-Drain Voltage(ΙΙ)

1

1.2

SD

(V)

di/dt=50A/µs

VGS=0V

Ta=25°C Pulsed

DR

(A)

Transistors

10

D=1

1

0.5

0.2

0.1

0.05

0.02

0.01

NORMALIZED TRANSIENT

THERMAL RESISTANCE : r(t)

0.001

0.01 Single pulse

100µ 100m

10m

PULSE WIDTH : PW(s)

Fig.16 Normarized Transient Thermal Resistance vs. Pulse Width

Switching characteristics measurement circuit

!

When mounted on a 40 x 40 x 0.7 mm

aluminum-ceramic board.

Ta=25°C

θ θ

th (ch-c) th (ch-c)

PW

(t)

= r

(t) •

=62.5°C/W

T

101 1001m

D=

θ

th (ch-c)

PW

T

2SK3065

Pulse width

VGS

RG

D.U.T.

D

I

RL

VDD

Fig.17 Switching Time Test Circuit

VDS

V

50%

GS

10%

td(on)

10%

90%

tr

ton

DS

Fig.18 Switching Time Waveforms

90%

td(off)

50%

10%

90%

tf

toff