Rainbow Electronics TSM20N50 User Manual

TO-220

ITO-220

PRODUCT SUMMARY

Pin Definition:

TSM20N50

500V N-Channel Power MOSFET

1. Gate

2. Drain

3. Source

General Description

The TSM20N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS
technology. This advanced technology has been especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half
bridge.

VDS (V) R

500 0.3 @ V

(Ω) ID (A)

DS(on)

=10V 18

GS

Features

● Low R

● Low gate charge typical @ 54nC (Typ.)

● Improve dv/dt capability

DS(ON)

0.3Ω (Max.)

Block Diagram

Ordering Information

Part No. Package Packing

TSM20N50CZ C0 TO-220 50pcs / Tube
TSM20N50CI C0 ITO-220 50pcs / Tube

N-Channel MOSFET

Absolute Maximum Rating

(Ta = 25oC unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage VDS 500 V
Gate-Source Voltage VGS ±30 V
Continuous Drain Current(TC=25 )℃ ID 18 A
Pulsed Drain Current * IDM 72 A
Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns
Single Pulse Avalanche Energy (Note 2) EAS 954 mJ
Avalanche Current (Repetitive) (Note 1) IAR 18 A
Repetitive Avalanche Energy (Note 1) EAR 29 mJ
Operating Junction Temperature TJ 150 ºC
Storage Temperature Range T

* Limited by maximum junction temperature

1/10

-55 to +150

STG

o

C

Version: A12

c

TSM20N50

500V N-Channel Power MOSFET

Thermal Performance

Parameter Symbol TO-220 ITO-220 Unit

Thermal Resistance - Junction to Case RӨJC 0.43 2.6

o

C/W

Thermal Resistance - Junction to Ambient RӨJA 62.5

Notes: Surface mounted on FR4 board t ≤ 10sec

Electrical Specifications

(Tc = 25oC unless otherwise noted)

Parameter Conditions Symbol Min Typ Max Unit

Static

Drain-Source Breakdown Voltage V
Drain-Source On-State Resistance V
Gate Threshold Voltage V
Zero Gate Voltage Drain Current V
Gate Body Leakage VGS = ±30V, VDS = 0V I
Forward Transconductance V
Diode Forward Voltage IS = 18A, VGS = 0V VSD -- -- 1.5 V

Dynamic b

Total Gate Charge
Gate-Source Charge Qgs -- 15 -­Gate-Drain Charge Qgd -- 12.5 -­Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C

Switching

Turn-On Delay Time
Turn-On Rise Time tr -- 72 -­Turn-Off Delay Time t
Turn-Off Fall Time tf -- 68 -­Reverse Recovery Time
Reverse Recovery Charge Qfr -- 6 -- uC

Notes:

1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature

2. VDD = 50V, IAS=18A, L=5.3mH, RG=25Ω, Starting TJ=25℃

3. I

≤18A, di/dt ≤ 200A/uS, VDD ≤ BVDS, Starting TJ=25℃

SD

4. Pulse test: pulse width ≤300uS, duty cycle ≤2%

5. b For design reference only, not subject to production testing.

6. c Switching time is essentially independent of operating temperature.

= 0V, ID = 250uA BV

GS

= 10V, ID = 9.0A R

GS

= VGS, ID = 250uA V

DS

= 500V, VGS = 0V I

DS

= 30V, ID = 9.0A gfs -- 11 -- S

DS

500 -- -- V

DSS

-- 0.25 0.3 Ω

DS(ON)

2.0 -- 4.0 V

GS(TH)

-- -- 1 uA

DSS

-- -- ±100

GSS

Qg -- 54 --

V

= 400V, ID = 18A,

DS

V

= 10V

GS

C

V

= 25V, VGS = 0V,

DS

f = 1.0MHz

V

= 250V, ID = 18A,

DD

RG = 25Ω

V

= 0V, IS = 18A,

GS

-- 3094

iss

-- 296 --

oss

-- 9.2 --

rss

t

-- 78 --

d(on)

-- 184 --

d(off)

tfr -- 426 -- nS

--

dIF/dt = 100A/us

nA

nC

pF

nS

2/10

Version: A12

500V N-Channel Power MOSFET

TSM20N50

Electrical Characteristics Curve

Output Characteristics

On-Resistance vs. Drain Current

(Tc = 25oC, unless otherwise noted)

Transfer Characteristics

Gate Charge

On-Resistance vs. Junction Temperature

Source-Drain Diode Forward Voltage

3/10

Version: A12