Rainbow Electronics TSM1N45 User Manual

TO-92 SOT

-

223

A

R

A

R

STG

Pin

Definition

:

TSM1N45

450V N-Channel Power MOSFET

1. Gate

2. Drain

3. Source

General Description

The TSM1N45 is N-Channel enhancement mode power field effect transistors are produced using planar DMOS
technology process. This advanced technology has been especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand higher energy pulse in the avalanche and commutation
mode. There devices are well suited for electronic ballasts base and half bridge configuration.

PRODUCT SUMMARY

VDS (V) R

450 4.25 @ V

DS(on)

GS

(Ω) ID (A)

=10V 0.25

Features

● Low gate charge @ typical 6.5nC

● Low Crss @ typical 6.5pF

● Avalanche energy specified

● Improved dv/dt capability

● Gate-Source Voltage ±30V guaranteed

Block Diagram

Ordering Information

Part No. Package Packing

TSM1N45CT B0 TO-92 1Kpcs / Bulk
TSM1N45CT A3 TO-92 2Kpcs / Ammo
TSM1N45CW RP SOT-223 2.5Kpcs / 13” Reel

Absolute Maximum Rating

(Ta=25oC unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
Single Pulse Drain to Source Avalanche Energy (Note 2) EAS 108 mJ
Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)

Total Power Dissipation @TC =25ºC
Operating Junction and Storage Temperature Range

*Surface Mounted on 1”x1” FR4 board

TO-92
SOT-223

N-Channel MOSFET

VDS 450 V
VGS ±30 V

ID 0.5 A

IDM 4 A

I

0.5 A

E

0.25 mJ

dv/dt 5.5 V/ns

P

DTOT

TJ, T

-55 to +150

2

15

W

o

C

Thermal Performance

Parameter Symbol Limit Unit

Thermal Resistance - Junction to Lead TO-92 RӨJL 50
Thermal Resistance - Junction to Case SOT-223 RӨJC 8.5

Thermal Resistance - Junction to Ambient *

*When mounted on the minimum pad size recommended (PCB mount)

1/9

TO-92
SOT-223 60

RӨJA

140

o

C/W

o

C/W

Version: C09

GS

DSS

GS

DS(ON)

DS

DS

DS

DSS

GSS

DS

iss

oss

rss

d(on)

d(off)

S

M

GS

S

TSM1N45

450V N-Channel Power MOSFET

Electrical Specifications

Parameter Conditions Symbol

Static

Drain-Source Breakdown Voltage V
Drain-Source On-State Resistance V

Gate Threshold Voltage
Zero Gate Voltage Drain Current V

Gate Body Leakage VGS = ±30V, VDS = 0V I
Forward Transconductance V

Dynamic

Total Gate Charge
Gate-Source Charge Qgs -- 1.3 -­Gate-Drain Charge Qgd -- 3.2 -­Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C

Switching

Turn-On Delay Time
Turn-On Rise Time tr -- 32.8 -­Turn-Off Delay Time t
Turn-Off Fall Time tf -- 23.7 --

Drain-Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain-Source Diode Forward Current IS -- -- 0.5 A
Maximum Pulsed Drain-Source Diode Forward Current I
Drain-Source Diode Forward Voltage V

Reverse Recovery Time
Reverse Recovery Charge Qrr -- 0.35 -- µC

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. L=75mH, IAS=1.6A, VDD=50V, RG=25Ω, Starting TJ=25ºC

3. ISD ≤ 0.5A, di/dt ≤ 300A/µS, VDD ≤ BV

4. Pulse test: pulse width ≤ 300uS.

5. Essentially independent of operating temperature

6. a) Reference point of the is the drain RӨ
b) When mounted on 3”x4.5” FR-4 PCB without any pad copper in a still air environment

(RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistance. RӨ

user’s board design)

(Ta=25oC, unless otherwise noted)

= 0V, ID = 250uA BV
= 10V, ID = 0.25A R

V

= VGS, ID = 250uA

V

= VGS, ID = 250mA 3.2 4.0 4.8
= 450V, VGS = 0V I

= 50V, ID = 0.25A gfs -- 0.7 -- S

V

= 360V, ID = 0.5A,

DS

V

= 10V

GS

(Note 4,5)
V

= 25V, VGS = 0V,

DS

f = 1.0MHz

V

= 25V, ID = 0.5A,

GS

V

= 225V, RG = 25Ω

DS

(Note 4,5)

= 0V, I

V

= 0V, IS = 1A

GS

= 0.5A VSD -- -- 1.4 V

dIF/dt = 100A/µS
(Note 4)

, Starting TJ=25ºC

DSS

lead

JL

Min Typ Max Unit

450 -- -- V

-- 3.7 4.25 Ω

V

GS(TH)

-- -- 10 uA

-- -- ±100 nA

Qg -- 6.5 10

C

-- 235 --

-- 29 --

-- 6.5 --

t

-- 14.7 --

-- 25.2 --

-- -- 4.0 A

trr -- 110 -- nS

2.3 3.0 3.7

CA

is determined by the

V

nC

pF

nS

2/9

Version: C09

Electrical Characteristics Curve

450V N-Channel Power MOSFET

(Ta = 25oC, unless otherwise noted)

TSM1N45

Output Characteristics

On-Resistance vs. Drain Current

Transfer Characteristics

Gate Charge

On-Resistance vs. Junction Temperature

3/9

Source-Drain Diode Forward Voltage

Version: C09