TO-92 SOT
-
223
A
R
A
R
STG
Pin
Definition
:
TSM1N45
450V N-Channel Power MOSFET
1. Gate
2. Drain
3. Source
General Description
The TSM1N45 is N-Channel enhancement mode power field effect transistors are produced using planar DMOS
technology process. This advanced technology has been especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand higher energy pulse in the avalanche and commutation
mode. There devices are well suited for electronic ballasts base and half bridge configuration.
PRODUCT SUMMARY
VDS (V) R
450 4.25 @ V
DS(on)
GS
(Ω) ID (A)
=10V 0.25
Features
● Low gate charge @ typical 6.5nC
● Low Crss @ typical 6.5pF
● Avalanche energy specified
● Improved dv/dt capability
● Gate-Source Voltage ±30V guaranteed
Block Diagram
Ordering Information
Part No. Package Packing
TSM1N45CT B0 TO-92 1Kpcs / Bulk
TSM1N45CT A3 TO-92 2Kpcs / Ammo
TSM1N45CW RP SOT-223 2.5Kpcs / 13” Reel
Absolute Maximum Rating
(Ta=25oC unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
Single Pulse Drain to Source Avalanche Energy (Note 2) EAS 108 mJ
Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
Total Power Dissipation @TC =25ºC
Operating Junction and Storage Temperature Range
*Surface Mounted on 1”x1” FR4 board
TO-92
SOT-223
N-Channel MOSFET
VDS 450 V
VGS ±30 V
ID 0.5 A
IDM 4 A
I
0.5 A
E
0.25 mJ
dv/dt 5.5 V/ns
P
DTOT
TJ, T
-55 to +150
2
15
W
o
C
Thermal Performance
Parameter Symbol Limit Unit
Thermal Resistance - Junction to Lead TO-92 RӨJL 50
Thermal Resistance - Junction to Case SOT-223 RӨJC 8.5
Thermal Resistance - Junction to Ambient *
*When mounted on the minimum pad size recommended (PCB mount)
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TO-92
SOT-223 60
RӨJA
140
o
C/W
o
C/W
Version: C09
GS
DSS
GS
DS(ON)
DS
DS
DS
DSS
GSS
DS
iss
oss
rss
d(on)
d(off)
S
M
GS
S
TSM1N45
450V N-Channel Power MOSFET
Electrical Specifications
Parameter Conditions Symbol
Static
Drain-Source Breakdown Voltage V
Drain-Source On-State Resistance V
Gate Threshold Voltage
Zero Gate Voltage Drain Current V
Gate Body Leakage VGS = ±30V, VDS = 0V I
Forward Transconductance V
Dynamic
Total Gate Charge
Gate-Source Charge Qgs -- 1.3 -Gate-Drain Charge Qgd -- 3.2 -Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Switching
Turn-On Delay Time
Turn-On Rise Time tr -- 32.8 -Turn-Off Delay Time t
Turn-Off Fall Time tf -- 23.7 --
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current IS -- -- 0.5 A
Maximum Pulsed Drain-Source Diode Forward Current I
Drain-Source Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge Qrr -- 0.35 -- µC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=75mH, IAS=1.6A, VDD=50V, RG=25Ω, Starting TJ=25ºC
3. ISD ≤ 0.5A, di/dt ≤ 300A/µS, VDD ≤ BV
4. Pulse test: pulse width ≤ 300uS.
5. Essentially independent of operating temperature
6. a) Reference point of the is the drain RӨ
b) When mounted on 3”x4.5” FR-4 PCB without any pad copper in a still air environment
(RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistance. RӨ
user’s board design)
(Ta=25oC, unless otherwise noted)
= 0V, ID = 250uA BV
= 10V, ID = 0.25A R
V
= VGS, ID = 250uA
V
= VGS, ID = 250mA 3.2 4.0 4.8
= 450V, VGS = 0V I
= 50V, ID = 0.25A gfs -- 0.7 -- S
V
= 360V, ID = 0.5A,
DS
V
= 10V
GS
(Note 4,5)
V
= 25V, VGS = 0V,
DS
f = 1.0MHz
V
= 25V, ID = 0.5A,
GS
V
= 225V, RG = 25Ω
DS
(Note 4,5)
= 0V, I
V
= 0V, IS = 1A
GS
= 0.5A VSD -- -- 1.4 V
dIF/dt = 100A/µS
(Note 4)
, Starting TJ=25ºC
DSS
lead
JL
Min Typ Max Unit
450 -- -- V
-- 3.7 4.25 Ω
V
GS(TH)
-- -- 10 uA
-- -- ±100 nA
Qg -- 6.5 10
C
-- 235 --
-- 29 --
-- 6.5 --
t
-- 14.7 --
-- 25.2 --
-- -- 4.0 A
trr -- 110 -- nS
2.3 3.0 3.7
CA
is determined by the
V
nC
pF
nS
2/9
Version: C09
Electrical Characteristics Curve
450V N-Channel Power MOSFET
(Ta = 25oC, unless otherwise noted)
TSM1N45
Output Characteristics
On-Resistance vs. Drain Current
Transfer Characteristics
Gate Charge
On-Resistance vs. Junction Temperature
3/9
Source-Drain Diode Forward Voltage
Version: C09
Electrical Characteristics Curve
450V N-Channel Power MOSFET
(Ta = 25oC, unless otherwise noted)
TSM1N45
On-Resistance vs. Gate-Source Voltage
Maximum Safe Operating Area
Threshold Voltage
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/9
Version: C09
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveform
TSM1N45
450V N-Channel Power MOSFET
EAS Test Circuit & Waveform
5/9
Version: C09
450V N-Channel Power MOSFET
Diode Reverse Recovery Time Test Circuit & Waveform
TSM1N45
6/9
Version: C09
= Year Code
= Month Code
= Lot Code
TSM1N45
450V N-Channel Power MOSFET
TO-92 Mechanical Drawing
TO-92 DIMENSION
DIM
A 4.30 4.70 0.169 0.185
B 4.30 4.70 0.169 0.185
C 13.53 (typ) 0.532 (typ)
D 0.39 0.49 0.015 0.019
E 1.18 1.28 0.046 0.050
F 3.30 3.70 0.130 0.146
G 1.27 1.31 0.050 0.051
H 0.33 0.43 0.013 0.017
MILLIMETERS INCHES
MIN MAX MIN MAX
Marking Diagram
Y
M
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep,
J=Oct, K=Nov, L=Dec)
L
7/9
Version: C09
= Year Code
= Month Code
= Lot Code
TSM1N45
450V N-Channel Power MOSFET
SOT-223 Mechanical Drawing
SOT-223 DIMENSION
DIM
A 6.350 6.850 0.250 0.270
B 2.900 3.100 0.114 0.122
C 3.450 3.750 0.136 0.148
D 0.595 0.635 0.023 0.025
E 4.550 4.650 0.179 0.183
F 2.250 2.350 0.088 0.093
G 0.835 1.035 0.032 0.041
H 6.700 7.300 0.263 0.287
I 0.250 0.355 0.010 0.014
J 10° 16° 10° 16°
K 1.550 1.800 0.061 0.071
MILLIMETERS INCHES
MIN MAX MIN MAX
Marking Diagram
Y
M
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep,
J=Oct, K=Nov, L=Dec)
L
8/9
Version: C09
TSM1N45
450V N-Channel Power MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
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Version: C09
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