Rainbow Electronics TSM19N20 User Manual
TO-252
PRODUCT SUMMARY
Pin
Definition
:
200V N-Channel Power MOSFET
(DPAK)
1. Gate
2. Drain
3. Source
VDS (V) R
200 92 @ V
DS(on)
TSM19N20
(mΩ) ID (A)
=10V 18
GS
Features
● Advanced Trench Technology
● Low R
● Low gate charge typical @ 55nC (Typ.)
● Low Crss typical @ 73pF (Typ.)
92mΩ (Max.)
DS(ON)
Block Diagram
Ordering Information
Part No. Package
TSM19N20CP ROG
Note: “G” denote for Halogen Free Product
Absolute Maximum Rating
TO-252 2.5Kpcs / 13” Reel
(Ta = 25oC unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 200 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current @ TC=25°C ID 18 A
Drain Current Pulsed (Note 1) IDM 72 A
Packing
N-Channel MOSFET
Avalanche Current IAS 8 A
Avalanche Energy, L=10mH EAS 320 mJ
Maximum Power Dissipation @ TC=25°C PD 48 W
Storage Temperature Range T
Operating Junction Temperature Range TJ -55 to +150 °C
* Limited by maximum junction temperature
Thermal Performance
-55 to +150 °C
STG
Parameter Symbol Limit Unit
Thermal Resistance - Junction to Case RӨJC 2.6
Thermal Resistance - Junction to Ambient RӨJA 50
Notes: Surface mounted on FR4 board t ≤ 10sec
o
C/W
o
C/W
1/4
Version: A12
200V N-Channel Power MOSFET
Electrical Specifications
(Ta = 25oC unless otherwise noted)
TSM19N20
Parameter Conditions Symbol
Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V
Drain-Source On-State Resistance V
Gate Threshold Voltage V
Zero Gate Voltage Drain Current V
Gate Body Leakage VGS = ±30V, VDS = 0V I
= 0V, ID = 250uA BV
GS
= 10V, ID = 10A R
GS
= VGS, ID = 250uA V
DS
= 160V, VGS = 0V I
DS
200 -- -- V
DSS
-- 80 92 mΩ
DS(ON)
2 -- 4 V
GS(TH)
-- -- 1 uA
DSS
-- -- ±100
GSS
Dynamic
Total Gate Charge
V
= 100V, ID = 10A,
Gate-Source Charge Qgs -- 18 -Gate-Drain Charge Qgd -- 17 --
V
DS
= 10V
GS
Input Capacitance
V
= 30V, VGS = 0V,
Output Capacitance C
DS
f = 1.0MHz
Reverse Transfer Capacitance C
Qg -- 55 --
C
-- 2300 --
iss
-- 145 --
oss
-- 73 --
rss
Switching
Turn-On Delay Time
Turn-On Rise Time tr -- 12 -Turn-Off Delay Time t
V
= 10V, V
GS
RG = 3Ω
= 100V,
DS
t
-- 17 --
d(on)
-- 28 --
d(off)
Turn-Off Fall Time tf -- 10 --
Drain-Source Diode Characteristics and Maximum Rating
Drain-Source Diode Forward
Voltage
VGS=0V, IS=10A VSD -- -- 1.3 V
nA
nC
pF
nS
Reverse Recovery Time
Reverse Recovery Charge Qfr -- 276 -- nC
IS = 10A, TJ=25 oC
dI/dt = 100A/us
tfr -- 82 -- nS
Notes:
1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
2. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal
reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA
is determined by the user's board design. RθJA shown below for single device operation on FR-4 in still air
2/4
Version: A12
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