Rainbow Electronics TSM160N10 User Manual
TO-220
PRODUCT SUMMARY
Pin
Definition
:
100V N-Channel Power MOSFET
1. Gate
2. Drain
3. Source
VDS (V) R
100 5.5 @ V
DS(on)
TSM160N10
(mΩ) ID (A)
=10V 160
GS
Features
● Advanced Trench Technology
● Low R
● Low gate charge typical @ 154nC (Typ.)
● Low Crss typical @ 300pF (Typ.)
5.5mΩ (Max.)
DS(ON)
Block Diagram
Ordering Information
Part No. Package Packing
TSM160N10CZ C0 TO-220 50pcs / Tube
N-Channel MOSFET
Absolute Maximum Rating
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current
Drain Current-Pulsed Note 1 IDM 620 A
Avalanche Current, L=0.5mH IAS, IAR 40 A
Avalanche Energy, L=0.5mH EAS, EAR 400 mJ
Maximum Power Dissipation
Storage Temperature Range T
Operating Junction Temperature Range TJ -55 to +175 °C
* Limited by maximum junction temperature
(Ta = 25oC unless otherwise noted)
TC=25°C
TC=70°C 127
TA=25°C 14.2
TA=70°C 11.4
TC=25°C
TC=70°C 210
TA=25°C 2.4
TA=70°C 1.68
160
ID
300
PD
-55 to +175 °C
STG
A
W
Thermal Performance
Parameter Symbol Limit Unit
Thermal Resistance - Junction to Case RӨJC 0.5
Thermal Resistance - Junction to Ambient RӨJA 62.5
Notes: Surface mounted on FR4 board t ≤ 10sec
1/6
o
C/W
o
C/W
Version: B13
100V N-Channel Power MOSFET
Electrical Specifications
(Ta = 25oC unless otherwise noted)
TSM160N10
Parameter Conditions Symbol
Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V
Drain-Source On-State Resistance V
Gate Threshold Voltage V
Zero Gate Voltage Drain Current V
Gate Body Leakage VGS = ±20V, VDS = 0V I
= 0V, ID = 250uA BV
GS
= 10V, ID = 30A R
GS
= VGS, ID = 250uA V
DS
= 80V, VGS = 0V I
DS
100 -- -- V
DSS
-- 4.5 5.5 mΩ
DS(ON)
2 3 4 V
GS(TH)
-- -- 1 uA
DSS
-- -- ±100
GSS
Dynamic
Total Gate Charge
V
= 30V, ID = 30A,
Gate-Source Charge Qgs -- 35 -Gate-Drain Charge Qgd -- 40 --
V
DS
= 10V
GS
Input Capacitance
V
= 30V, VGS = 0V,
Output Capacitance C
DS
f = 1.0MHz
Reverse Transfer Capacitance C
Qg -- 154 --
C
-- 8600 --
iss
-- 780 --
oss
-- 300 --
rss
Switching
Turn-On Delay Time
Turn-On Rise Time tr -- 40 -Turn-Off Delay Time t
V
= 10V, V
GS
RG = 3.3Ω
= 30V,
DS
t
-- 25 --
d(on)
-- 85 --
d(off)
Turn-Off Fall Time tf -- 45 --
Drain-Source Diode Characteristics and Maximum Rating
Drain-Source Diode Forward
Voltage
VGS=0V, IS=30A VSD -- 0.8 1.3 V
nA
nC
pF
nS
Reverse Recovery Time
Reverse Recovery Charge Qfr -- 160 -- nC
IS = 30A, TJ=25 oC
dI/dt = 100A/us
tfr -- 120 -- nS
Notes:
1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
2. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal
reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA
is determined by the user's board design. RθJA shown below for single device operation on FR-4 in still air
2/6
Version: B13
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