Rainbow Electronics TSM15N15 User Manual
TO-252
PRODUCT SUMMARY
Pin
Definition
:
150V N-Channel Power MOSFET
(DPAK)
1. Gate
2. Drain
3. Source
VDS (V) R
150 75 @ V
DS(on)
TSM15N15
(mΩ) ID (A)
=10V 12
GS
Features
● Advanced Trench Technology
● Low R
● Low gate charge typical @ 20.9nC (Typ.)
● Low Crss typical @ 58pF (Typ.)
75mΩ (Max.)
DS(ON)
Block Diagram
Ordering Information
Part No. Package
TSM15N15CP ROG
Note: “G” denote for Halogen Free Product
Absolute Maximum Rating
TO-252 2.5Kpcs / 13” Reel
(Ta = 25oC unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 150 V
Gate-Source Voltage VGS ±30 V
Continuous Drain Current
Drain Current-Pulsed Note 1 IDM 30 A
Avalanche Current, L=0.1mH IAS, IAR 8.2 A
Avalanche Energy, L=0.1mH EAS, EAR 100 mJ
Maximum Power Dissipation
Storage Temperature Range T
Operating Junction Temperature Range TJ -55 to +150 °C
Packing
N-Channel MOSFET
TC=25°C
TC=70°C 9
TA=25°C 4
TA=70°C 3
TC=25°C
TC=70°C 10
TA=25°C 2
TA=70°C 1.3
I
D
P
D
-55 to +150 °C
STG
12
A
15.6
W
* Limited by maximum junction temperature
Thermal Performance
Parameter Symbol Limit Unit
Thermal Resistance - Junction to Case RӨJC 8
Thermal Resistance - Junction to Ambient RӨJA 62
1/4
o
C/W
o
C/W
Version: A12
150V N-Channel Power MOSFET
Electrical Specifications
Parameter Conditions Symbol
Static
(Ta = 25oC unless otherwise noted)
Min Typ Max Unit
TSM15N15
Drain-Source Breakdown Voltage V
Drain-Source On-State Resistance
Gate Threshold Voltage V
Zero Gate Voltage Drain Current V
Gate Body Leakage VGS = ±30V, VDS = 0V I
= 0V, ID = 250uA BV
GS
V
= 10V, ID = 10A R
GS
= VGS, ID = 250uA V
DS
= 120V, VGS = 0V I
DS
150 -- -- V
DSS
-- 62 75 mΩ
DS(ON)
2 3 4 V
GS(TH)
-- -- 1 uA
DSS
-- -- ±100
GSS
Dynamic
Total Gate Charge
V
= 75V, ID = 10A,
Gate-Source Charge Qgs -- 4.4 -Gate-Drain Charge Qgd -- 6.5 --
V
DS
= 10V
GS
Input Capacitance
V
= 30V, VGS = 0V,
Output Capacitance C
DS
f = 1.0MHz
Reverse Transfer Capacitance C
Qg -- 20.9 --
C
-- 980 --
iss
-- 127 --
oss
-- 58 --
rss
Switching
Turn-On Delay Time
Turn-On Rise Time tr -Turn-Off Delay Time t
V
= 10V, V
GS
RG = 3Ω
= 75V,
DS
t
-- 26 --
d(on)
14
-- 73 --
d(off)
--
Turn-Off Fall Time tf -- 18 --
nA
nC
pF
nS
Drain-Source Diode Characteristics and Maximum Rating
Drain-Source Diode Forward
Voltage
Reverse Recovery Time
Reverse Recovery Charge Qfr 151 nC
VGS=0V, IS=10A VSD - 0.8 1.3 V
IS = 10A, TJ=25 oC
tfr 56 nS
dI/dt = 500A/us
Notes:
1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
2. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal
reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA
is determined by the user's board design. RθJA shown below for single device operation on FR-4 in still air
2/4
Version: A12
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