Rainbow Electronics TSM15N03PQ33 User Manual
PDFN
33
PRODUCT SUMMARY
Pin
Definition
:
30V N-Channel Power MOSFET
1. Source 8. Drain
2. Source 7. Drain
3. Source 6. Drain
4. Gate 5. Drain
VDS (V) R
30
TSM15N03PQ33
DS(on)
12 @ V
17 @ V
(mΩ) ID (A)
=10V 7.8
GS
=4.5V 7
GS
Features
● Advanced Trench Technology
● Low On-Resistance
● Low gate charge typical @ 3.6nC (Typ.)
● Low Crss typical @ 38pF (Typ.)
Block Diagram
Ordering Information
Part No. Package
TSM15N03PQ33 RGG PDFN33 5Kpcs / 13” Reel
Note: “G” denote for Halogen Free Product
Absolute Maximum Rating
(Ta = 25oC unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current
Drain Current-Pulsed Note 1 IDM 35 A
Avalanche Current, L=0.1mH IAS, IAR 9 A
Avalanche Energy, L=0.1mH EAS, EAR 4 mJ
Maximum Power Dissipation
Storage Temperature Range T
Operating Junction Temperature Range TJ -55 to +150 °C
* Limited by maximum junction temperature
Packing
N-Channel MOSFET
TC=25°C
TC=70°C 14
TA=25°C 9.7
TA=70°C 7.8
TC=25°C
TC=70°C 10
TA=25°C 3.2
TA=70°C 2.1
ID
PD
-55 to +150 °C
STG
14
15.6
A
W
Thermal Performance
Parameter Symbol Limit Unit
Thermal Resistance - Junction to Case RӨJC 8
Thermal Resistance - Junction to Ambient RӨJA 40
Notes: Surface mounted on FR4 board t ≤ 10sec
1/4
o
C/W
o
C/W
Version: A12
30V N-Channel Power MOSFET
Electrical Specifications
(Ta = 25oC unless otherwise noted)
TSM15N03PQ33
Parameter Conditions Symbol
Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V
Drain-Source On-State Resistance
Gate Threshold Voltage V
Zero Gate Voltage Drain Current V
Gate Body Leakage VGS = ±20V, VDS = 0V I
= 0V, ID = 250uA BV
GS
V
= 10V, ID = 7.8A
GS
V
= 4.5V, ID = 7A -- 13 17
GS
= VGS, ID = 250uA V
DS
= 24V, VGS = 0V I
DS
30 -- -- V
DSS
R
DS(ON)
1.2 -- 2.5 V
GS(TH)
-- -- 1 uA
DSS
-- -- ±100
GSS
-- 9 12
Dynamic
Total Gate Charge
V
= 15V, ID = 7.8A,
Gate-Source Charge Qgs -- 1.2 -Gate-Drain Charge Qgd -- 1 --
DS
V
GS
= 4.5V
Input Capacitance
V
= 15V, VGS = 0V,
Output Capacitance C
DS
f = 1.0MHz
Reverse Transfer Capacitance C
Qg -- 3.6 --
C
-- 415 --
iss
-- 90 --
oss
-- 38 --
rss
Switching
Turn-On Delay Time
Turn-On Rise Time tr -- 10 -Turn-Off Delay Time t
V
= 4.5V, V
GS
RG = 1Ω
= 15V,
DS
t
-- 13 --
d(on)
-- 11 --
d(off)
Turn-Off Fall Time tf -- 8 --
Drain-Source Diode Characteristics and Maximum Rating
Drain-Source Diode Forward
Voltage
VGS=0V, IS=6.3A VSD -- 0.8 1.3 V
mΩ
nA
nC
pF
nS
Reverse Recovery Time
Reverse Recovery Charge Qfr -- 7 -- nC
IS = 6.3A, TJ=25 oC
dI/dt = 100A/us
tfr -- 15 -- nS
Notes:
1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
2. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal
reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA
is determined by the user's board design. RθJA shown below for single device operation on FR-4 in still air
3. The maximum current rating is limited by package.
2/4
Version: A12
Loading...