Page 1
TO-220
ITO-220
PRODUCT SUMMARY
Block Diagram
Pin
Definition
:
TSM13N50
500V N-Channel Power MOSFET
1. Gate
2. Drain
3. Source
General Description
The TSM13N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half
bridge.
VDS (V) R
500 0.48 @ V
(Ω) ID (A)
DS(on)
=10V 13
GS
Features
● Low R
● Low gate charge typical @ 36nC (Typ.)
● Low Crss typical @ 7.7pF (Typ.)
● Fast Switching
0.38Ω (Typ.)
DS(ON)
Ordering Information
Part No. Package Packing
TSM13N50CZ C0
TSM13N50CI C0 ITO-220 50pcs / Tube
TO-220 50pcs / Tube
N-Channel MOSFET
Absolute Maximum Rating
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 500 V
Gate-Source Voltage VGS ±30 V
Continuous Drain Current(TC=25 )℃ ID 13 A
Pulsed Drain Current * IDM 52 A
Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns
Single Pulse Avalanche Energy (Note 2) EAS 563 mJ
Avalanche Current (Repetitive) (Note 1) IAR 13 A
Repetitive Avalanche Energy (Note 1) EAR 18.3 mJ
Operating Junction Temperature TJ 150 ºC
Storage Temperature Range T
* Limited by maximum junction temperature
(Ta = 25oC unless otherwise noted)
-55 to +150
STG
o
C
Thermal Performance
Parameter Symbol Limit Unit
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient TO-220 / ITO-220
Notes: Surface mounted on FR4 board t ≤ 10sec
1/10
TO-220
RӨJC
RӨJA 62.5
0.63
o
C/W ITO-220 2.4
Version: C12
Page 2
Electrical Specifications
500V N-Channel Power MOSFET
(Ta = 25oC unless otherwise noted)
TSM13N50
Parameter Conditions Symbol
Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V
Drain-Source On-State Resistance V
Gate Threshold Voltage V
Zero Gate Voltage Drain Current V
Gate Body Leakage VGS = ±30V, VDS = 0V I
Forward Transconductance V
= 0V, ID = 250uA BV
GS
= 10V, ID = 6.5A R
GS
= VGS, ID = 250uA V
DS
= 500V, VGS = 0V I
DS
= 30V, ID = 6.5A gfs -- 14 -- S
DS
500 -- -- V
DSS
-- 0.38 0.48 Ω
DS(ON)
2.0 -- 4.0 V
GS(TH)
-- -- 1 uA
DSS
-- -- ±100 nA
GSS
Diode Forward Voltage IS = 13A, VGS = 0V VSD -- -- 1.5 V
Dynamic
Total Gate Charge
V
= 400V, ID = 13A,
Gate-Source Charge Qgs -- 8.5 -Gate-Drain Charge Qgd -- 8.7 --
V
DS
= 10V
GS
Input Capacitance
V
= 25V, VGS = 0V,
Output Capacitance C
DS
f = 1.0MHz
Reverse Transfer Capacitance C
Qg -- 36 --
C
-- 1918 --
iss
-- 187 --
oss
-- 7.7 --
rss
Switching
Turn-On Delay Time
Turn-On Rise Time tr -- 45 -Turn-Off Delay Time t
V
= 250V, ID = 13A,
DD
RG = 25Ω
t
-- 53 --
d(on)
-- 156 --
d(off)
Turn-Off Fall Time tf -- 59 -Reverse Recovery Time
Reverse Recovery Charge Qfr -- 3.3 -- uC
V
= 0V, IS = 13A,
GS
dIF/dt = 100A/us
tfr -- 325 -- nS
Notes:
1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2. VDD = 50V, IAS=13A, L=6mH, RG=25Ω, Starting TJ=25℃
3. I
≤13A, di/dt ≤ 200A/uS, Vdd ≤ BVDS, Starting TJ=25℃
SD
4. Pulse test: pulse width ≤300uS, duty cycle ≤2%
5. b For design reference only, not subject to production testing.
6. c Switching time is essentially independent of operating temperature.
nC
pF
nS
2/10
Version: C12
Page 3
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveform
TSM13N50
500V N-Channel Power MOSFET
EAS Test Circuit & Waveform
3/10
Version: C12
Page 4
500V N-Channel Power MOSFET
Diode Reverse Recovery Time Test Circuit & Waveform
TSM13N50
4/10
Version: C12
Page 5
TSM13N50
500V N-Channel Power MOSFET
Electrical Characteristics Curve
Output Characteristics
On-Resistance vs. Drain Current
(Tc = 25oC, unless otherwise noted)
Transfer Characteristics
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
5/10
Version: C12
Page 6
Electrical Characteristics Curve
500V N-Channel Power MOSFET
(Ta = 25oC, unless otherwise noted)
TSM13N50
Drain Current vs. Case Temperature
Maximum Safe Operating Area
BV
vs. Junction Temperature
DSS
Capacitance vs. Drain-Source Voltage
Maximum Safe Operating Area (ITO-220)
6/10
Version: C12
Page 7
Electrical Characteristics Curve
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Ambient(ITO-220)
500V N-Channel Power MOSFET
(Ta = 25oC, unless otherwise noted)
TSM13N50
7/10
Version: C12
Page 8
TSM13N50
500V N-Channel Power MOSFET
TO-220 Mechanical Drawing
TO-220 DIMENSION
DIM
A 10.00 10.50 0.394 0.413
B 3.74 3.91 0.147 0.154
C 2.44 2.94 0.096 0.116
D -- 6.35 -- 0.250
E 0.38 1.10 0.015 0.043
F 2.34 2.71 0.092 0.107
G 4.69 5.43 0.185 0.214
H 12.70 14.73 0.500 0.580
I 8.38 9.38 0.330 0.369
J 14.22 16.51 0.560 0.650
K 3.55 4.82 0.140 0.190
L 1.16 1.40 0.046 0.055
M 27.70 29.62 1.091 1.166
N 2.03 2.92 0.080 0.115
O 0.25 0.61 0.010 0.024
P 5.84 6.85 0.230 0.270
MILLIMETERS INCHES
MIN MAX MIN MAX
8/10
Version: C12
Page 9
TSM13N50
500V N-Channel Power MOSFET
ITO-220 Mechanical Drawing
ITO-220 DIMENSION
DIM
A 10.04 10.07 0.395 0.396
B 6.20 (typ.) 0.244 (typ.)
C 2.20 (typ.) 0.087 (typ.)
D ∮1.40 (typ.) ∮0.055 (typ.)
E 15.0 15.20 0.591 0.598
F 0.52 0.54 0.020 0.021
G 2.35 2.73 0.093 0.107
H 13.50 13.55 0.531 0.533
I 1.11 1.49 0.044 0.058
J 2.60 2.80 0.102 0.110
K 4.49 4.50 0.176 0.177
L 1.15 (typ.) 0.045 (typ.)
M 3.03 3.05 0.119 0.120
N 2.60 2.80 0.102 0.110
O 6.55 6.65 0.258 0.262
MILLIMETERS INCHES
MIN MAX MIN MAX
9/10
Version: C12
Page 10
TSM13N50
500V N-Channel Power MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
10/10
Version: C12
Loading...