ITO-220
PRODUCT SUMMARY
Block Diagram
Pin
Definition
:
TSM12N65
650V N-Channel Power MOSFET
1. Gate
2. Drain
3. Source
VDS (V) R
650 0.8 @ V
General Description
The TSM12N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation mode.
(Ω) ID (A)
DS(on)
=10V 6
GS
Features
● Low R
● Low gate charge typical @ 41nC (Typ.)
● Low Crss typical @ 14.6pF (Typ.)
● Fast Switching
0.68Ω (Typ.)
DS(ON)
Ordering Information
Part No. Package Packing
TSM12N65CI C0
ITO-220 50pcs / Tube
N-Channel MOSFET
Absolute Maximum Rating
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 650 V
Gate-Source Voltage VGS ±30 V
Continuous Drain Current
Pulsed Drain Current * IDM 48 A
Single Pulse Avalanche Energy (Note 2) EAS 273 mJ
Avalanche Current (Repetitive) (Note 2 IAS 12 A
Single Pulse Avalanche Energy (Note 1) EAR 7.6 mJ
Avalanche Current (Repetitive) (Note 1) IAR 12 A
Total Power Dissipation @ TC = 25oC P
Operating Junction Temperature TJ 150 ºC
Storage Temperature Range T
Note: Limited by maximum junction temperature
(Ta = 25oC unless otherwise noted)
Tc = 25ºC
Tc = 100ºC 4.5 A
ID
45 W
TOT
-55 to +150
STG
12 A
o
C
Thermal Performance
Parameter Symbol Limit Unit
Thermal Resistance - Junction to Case RӨJC 2.7
Thermal Resistance - Junction to Ambient RӨJA 62.5
Notes: Surface mounted on FR4 board t ≤ 10sec
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o
C/W
o
C/W
Version: A10
c
TSM12N65
650V N-Channel Power MOSFET
Electrical Specifications
Parameter Conditions Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V
Drain-Source On-State Resistance V
Gate Threshold Voltage V
Zero Gate Voltage Drain Current V
Gate Body Leakage VGS = ±30V, VDS = 0V I
Forward Transfer Conductance V
Dynamic b
Total Gate Charge
Gate-Source Charge Qgs -- 13 -Gate-Drain Charge Qgd -- 10.5 -Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Switching
Turn-On Delay Time
Turn-On Rise Time tr -- 85 -Turn-Off Delay Time t
Turn-Off Fall Time tf -- 90 --
Source-Drain Diode Ratings and Characteristic
Source Current Integral reverse diode in
Source Current (Pulse) ISM -- -- 48 A
Diode Forward Voltage IS = 12A, VGS = 0V VSD -- -- 1.4 V
Reverse Recovery Time
Reverse Recovery Charge Qfr -- 4.3 -- uC
Note 1: Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
Note 2: VDD = 50V, IAS=12A, L=3.5mH, RG =25Ω, Starting TJ=25ºC
Note 3: Pulse test: pulse width ≤300uS, duty cycle ≤2%
Note 4: Essentially Independent of Operating Temperature
(Ta = 25oC unless otherwise noted)
= 0V, ID = 250uA BV
GS
= 10V, ID = 6A R
GS
= VGS, ID = 250uA V
DS
= 650V, VGS = 0V I
DS
= 10V, ID = 6A gfs -- 10 -- S
DS
V
= 480V, ID = 12A,
DS
V
= 10V
GS
V
= 25V, VGS = 0V,
DS
f = 1.0MHz
V
= 10V, ID = 12A,
GS
V
= 300V, RG =25Ω
DD
the MOSFET
V
= 0V, IS =12A,
GS
dIF/dt = 100A/us
650 -- -- V
DSS
-- 0.68 0.8 Ω
DS(ON)
2.0 -- 4.0 V
GS(TH)
-- -- 1 uA
DSS
-- -- ±100 nA
GSS
Qg -- 41 --
C
-- 2162 --
iss
-- 183 --
oss
-- 14.6 --
rss
t
-- 30 --
d(on)
-- 140 --
d(off)
IS -- -- 12 A
tfr -- 510 -- nS
nC
pF
nS
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Version: A10
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveform
TSM12N65
650V N-Channel Power MOSFET
EAS Test Circuit & Waveform
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Version: A10
650V N-Channel Power MOSFET
Diode Reverse Recovery Time Test Circuit & Waveform
TSM12N65
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Version: A10
Electrical Characteristics Curve
650V N-Channel Power MOSFET
(Ta = 25oC, unless otherwise noted)
TSM12N65
Output Characteristics
On-Resistance vs. Drain Current
Transfer Characteristics
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
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Version: A10
Electrical Characteristics Curve
650V N-Channel Power MOSFET
(Ta = 25oC, unless otherwise noted)
TSM12N65
BVDS vs. Junction Temperature
Capacitance
Drain Current vs., Case Temperature
Maximum Safe Operating Area
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Version: A10
= Year Code
= Month Code
= Lot Code
TSM12N65
650V N-Channel Power MOSFET
ITO-220 Mechanical Drawing
ITO-220 DIMENSION
DIM
A 10.04 10.07 0.395 0.396
B 6.20 (typ.) 0.244 (typ.)
C 2.20 (typ.) 0.087 (typ.)
D ∮1.40 (typ.) ∮0.055 (typ.)
E 15.0 15.20 0.591 0.598
F 0.52 0.54 0.020 0.021
G 2.35 2.73 0.093 0.107
H 13.50 13.55 0.531 0.533
I 1.11 1.49 0.044 0.058
J 2.60 2.80 0.102 0.110
K 4.49 4.50 0.176 0.177
L 1.15 (typ.) 0.045 (typ.)
M 3.03 3.05 0.119 0.120
N 2.60 2.80 0.102 0.110
O 6.55 6.65 0.258 0.262
MILLIMETERS INCHES
MIN MAX MIN MAX
Marking Diagram
Y
M
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
L
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Version: A10
TSM12N65
650V N-Channel Power MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
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Version: A10
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