Rainbow Electronics TSM12N65 User Manual
ITO-220
PRODUCT SUMMARY
Block Diagram
Pin
Definition
:
TSM12N65
650V N-Channel Power MOSFET
1. Gate
2. Drain
3. Source
VDS (V) R
650 0.8 @ V
General Description
The TSM12N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and commutation mode.
(Ω) ID (A)
DS(on)
=10V 6
GS
Features
● Low R
● Low gate charge typical @ 41nC (Typ.)
● Low Crss typical @ 14.6pF (Typ.)
● Fast Switching
0.68Ω (Typ.)
DS(ON)
Ordering Information
Part No. Package Packing
TSM12N65CI C0
ITO-220 50pcs / Tube
N-Channel MOSFET
Absolute Maximum Rating
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 650 V
Gate-Source Voltage VGS ±30 V
Continuous Drain Current
Pulsed Drain Current * IDM 48 A
Single Pulse Avalanche Energy (Note 2) EAS 273 mJ
Avalanche Current (Repetitive) (Note 2 IAS 12 A
Single Pulse Avalanche Energy (Note 1) EAR 7.6 mJ
Avalanche Current (Repetitive) (Note 1) IAR 12 A
Total Power Dissipation @ TC = 25oC P
Operating Junction Temperature TJ 150 ºC
Storage Temperature Range T
Note: Limited by maximum junction temperature
(Ta = 25oC unless otherwise noted)
Tc = 25ºC
Tc = 100ºC 4.5 A
ID
45 W
TOT
-55 to +150
STG
12 A
o
C
Thermal Performance
Parameter Symbol Limit Unit
Thermal Resistance - Junction to Case RӨJC 2.7
Thermal Resistance - Junction to Ambient RӨJA 62.5
Notes: Surface mounted on FR4 board t ≤ 10sec
1/8
o
C/W
o
C/W
Version: A10
c
TSM12N65
650V N-Channel Power MOSFET
Electrical Specifications
Parameter Conditions Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V
Drain-Source On-State Resistance V
Gate Threshold Voltage V
Zero Gate Voltage Drain Current V
Gate Body Leakage VGS = ±30V, VDS = 0V I
Forward Transfer Conductance V
Dynamic b
Total Gate Charge
Gate-Source Charge Qgs -- 13 -Gate-Drain Charge Qgd -- 10.5 -Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Switching
Turn-On Delay Time
Turn-On Rise Time tr -- 85 -Turn-Off Delay Time t
Turn-Off Fall Time tf -- 90 --
Source-Drain Diode Ratings and Characteristic
Source Current Integral reverse diode in
Source Current (Pulse) ISM -- -- 48 A
Diode Forward Voltage IS = 12A, VGS = 0V VSD -- -- 1.4 V
Reverse Recovery Time
Reverse Recovery Charge Qfr -- 4.3 -- uC
Note 1: Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
Note 2: VDD = 50V, IAS=12A, L=3.5mH, RG =25Ω, Starting TJ=25ºC
Note 3: Pulse test: pulse width ≤300uS, duty cycle ≤2%
Note 4: Essentially Independent of Operating Temperature
(Ta = 25oC unless otherwise noted)
= 0V, ID = 250uA BV
GS
= 10V, ID = 6A R
GS
= VGS, ID = 250uA V
DS
= 650V, VGS = 0V I
DS
= 10V, ID = 6A gfs -- 10 -- S
DS
V
= 480V, ID = 12A,
DS
V
= 10V
GS
V
= 25V, VGS = 0V,
DS
f = 1.0MHz
V
= 10V, ID = 12A,
GS
V
= 300V, RG =25Ω
DD
the MOSFET
V
= 0V, IS =12A,
GS
dIF/dt = 100A/us
650 -- -- V
DSS
-- 0.68 0.8 Ω
DS(ON)
2.0 -- 4.0 V
GS(TH)
-- -- 1 uA
DSS
-- -- ±100 nA
GSS
Qg -- 41 --
C
-- 2162 --
iss
-- 183 --
oss
-- 14.6 --
rss
t
-- 30 --
d(on)
-- 140 --
d(off)
IS -- -- 12 A
tfr -- 510 -- nS
nC
pF
nS
2/8
Version: A10
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveform
TSM12N65
650V N-Channel Power MOSFET
EAS Test Circuit & Waveform
3/8
Version: A10
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