
60V P-Channel MOSFET
(DPAK)
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Application
● Load Switch
● PA Switch
Ordering Information
Part No. Package
TSM10P06CP ROG TO-252 2.5Kpcs / 13” Reel
Note: “G” denote for Halogen Free Product
1. Gate
2. Drain
3. Source
Packing
VDS (V) R
170 @ VGS = -10V -5
-60
220 @ VGS = -4.5V -2
(mΩ) ID (A)
DSON
P-Channel MOSFET
TSM10P06
Absolute Maximum Rating
(TA = 25oC unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage VDS -60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current ID -10 A
Pulsed Drain Current IDM -20 A
Continuous Source Current (Diode Conduction)
Single Pulse Avalanche Energy (Note 2) EAS 5 mJ
Avalanche Current IAS -10 A
Total Power Dissipation @ TC=25C P
Operating Junction Temperature TJ +150
Operating Junction and Storage Temperature Range TJ, T
a,b
IS -10 A
37 W
DTOT
- 55 to +150
STG
o
C
o
C
Thermal Performance
Parameter Symbol Limit Unit
Junction to Case Thermal Resistance RӨJC 4
Junction to Ambient Thermal Resistance (PCB mounted) RӨJA 70
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 10 sec.
o
C/W
o
C/W
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Version: B13

60V P-Channel MOSFET
Electrical Specifications
Parameter Conditions Symbol
Static
(Ta = 25oC unless otherwise noted)
Min Typ Max Unit
TSM10P06
Drain-Source Breakdown Voltage V
Gate Threshold Voltage V
Gate Body Leakage VGS = ±20V, VDS = 0V I
Zero Gate Voltage Drain Current V
On-State Drain Currenta V
Drain-Source On-State Resistance
Forward Transconductance V
= 0V, ID = 250uA BV
GS
= VGS, ID = 250µA V
DS
= -60V, VGS = 0V I
DS
= -5V, V
DS
V
= -10V, ID = -5A
GS
V
= -4.5V, ID = -2A -- 170 220
GS
= -15V, ID = -3.5A gfs -- 6 --
DS
= -10V I
GS
-60 -- --
DSS
-1 -- --
GS(TH)
-- -- ±100
GSS
-- -- -1
DSS
-10 -- --
D(ON)
-- 130 170
R
DS(ON)
V
V
nA
µA
A
mΩ
S
Diode Forward Voltage IS = -2.5A, VGS = 0V VSD -- -1.25 -1.5 V
Dynamic
Total Gate Charge
V
= -15V, ID = -3.5A,
Gate-Source Charge Qgs -- 1.7 -Gate-Drain Charge Qgd -- 1.5 --
DS
V
GS
= -10V
Input Capacitance
V
= -30V, VGS = 0V,
Output Capacitance C
DS
f = 1.0MHz
Reverse Transfer Capacitance C
Qg -- 6 --
C
-- 540 --
iss
-- 60 --
oss
-- 30 --
rss
nC
pF
Switching
Turn-On Delay Time
V
= -15V, RL = 15Ω,
Turn-On Rise Time tr -- 9 -Turn-Off Delay Time t
DD
ID = -1A, V
RG = 6Ω
GEN
= -10V,
t
--
d(on)
-- 19 --
d(off)
7
Turn-Off Fall Time tf -- 4 --
Notes 1: Pulse test: PW ≤300µS, duty cycle ≤2%
Notes 2: L=0.1mH,
Notes 3: For DESIGN AID ONLY, not subject to production testing.
Notes 4: Switching time is essentially independent of operating temperature.
--
nS
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Version: B13

60V P-Channel MOSFET
TO-252 Mechanical Drawing
TO-252 DIMENSION
DIM
A 2.30 BSC 0.090 BSC
B 10.20 10.80
C 5.30 5.70
D 6.30 6.70
E 2.10 2.50
G 4.80 5.20
G1
H 0.40 0.60
H1
K 0.50 1.10
M 1.30 1.70
MILLIMETERS INCHES
MIN MAX MIN MAX
F 0.00 0.20
0.40 0.80
0.35 0.65
J 3.35 3.65
L 0.90 1.50
TSM10P06
0.402 0.425
0.209 0.224
0.248 0.264
0.083 0.098
0.000 0.008
0.189 0.205
0.016 0.031
0.016 0.024
0.014 0.026
0.132 0.144
0.020 0.043
0.035 0.059
0.051 0.067
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Version: B13

TSM10P06
60V P-Channel MOSFET
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
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Version: B13