Rainbow Electronics TSM10P06 User Manual

TO-252

PRODUCT SUMMARY

Block Diagram

Pin

Definition

:

60V P-Channel MOSFET

(DPAK)

Features

● Advance Trench Process Technology

● High Density Cell Design for Ultra Low On-resistance

Application

● Load Switch

● PA Switch

Ordering Information

Part No. Package

TSM10P06CP ROG TO-252 2.5Kpcs / 13” Reel

Note: “G” denote for Halogen Free Product

1. Gate

2. Drain

3. Source

Packing

VDS (V) R

170 @ VGS = -10V -5

-60
220 @ VGS = -4.5V -2

(mΩ) ID (A)

DSON

P-Channel MOSFET

TSM10P06

Absolute Maximum Rating

(TA = 25oC unless otherwise noted)

Parameter Symbol Limit Unit

Drain-Source Voltage VDS -60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current ID -10 A
Pulsed Drain Current IDM -20 A
Continuous Source Current (Diode Conduction)
Single Pulse Avalanche Energy (Note 2) EAS 5 mJ
Avalanche Current IAS -10 A
Total Power Dissipation @ TC=25C P
Operating Junction Temperature TJ +150
Operating Junction and Storage Temperature Range TJ, T

a,b

IS -10 A

37 W

DTOT

- 55 to +150

STG

o

C

o

C

Thermal Performance

Parameter Symbol Limit Unit

Junction to Case Thermal Resistance RӨJC 4
Junction to Ambient Thermal Resistance (PCB mounted) RӨJA 70

Notes:

a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 10 sec.

o

C/W

o

C/W

1/4

Version: B13

60V P-Channel MOSFET

Electrical Specifications

Parameter Conditions Symbol

Static

(Ta = 25oC unless otherwise noted)

Min Typ Max Unit

TSM10P06

Drain-Source Breakdown Voltage V
Gate Threshold Voltage V
Gate Body Leakage VGS = ±20V, VDS = 0V I
Zero Gate Voltage Drain Current V
On-State Drain Currenta V

Drain-Source On-State Resistance

Forward Transconductance V

= 0V, ID = 250uA BV

GS

= VGS, ID = 250µA V

DS

= -60V, VGS = 0V I

DS

= -5V, V

DS

V

= -10V, ID = -5A

GS

V

= -4.5V, ID = -2A -- 170 220

GS

= -15V, ID = -3.5A gfs -- 6 --

DS

= -10V I

GS

-60 -- --

DSS

-1 -- --

GS(TH)

-- -- ±100

GSS

-- -- -1

DSS

-10 -- --

D(ON)

-- 130 170

R

DS(ON)

V

V
nA
µA

A

mΩ

S

Diode Forward Voltage IS = -2.5A, VGS = 0V VSD -- -1.25 -1.5 V

Dynamic

Total Gate Charge

V

= -15V, ID = -3.5A,

Gate-Source Charge Qgs -- 1.7 -­Gate-Drain Charge Qgd -- 1.5 --

DS

V

GS

= -10V

Input Capacitance

V

= -30V, VGS = 0V,

Output Capacitance C

DS

f = 1.0MHz

Reverse Transfer Capacitance C

Qg -- 6 --

C

-- 540 --

iss

-- 60 --

oss

-- 30 --

rss

nC

pF

Switching

Turn-On Delay Time

V

= -15V, RL = 15Ω,

Turn-On Rise Time tr -- 9 -­Turn-Off Delay Time t

DD

ID = -1A, V
RG = 6Ω

GEN

= -10V,

t

--

d(on)

-- 19 --

d(off)

7

Turn-Off Fall Time tf -- 4 --

Notes 1: Pulse test: PW ≤300µS, duty cycle ≤2%
Notes 2: L=0.1mH,
Notes 3: For DESIGN AID ONLY, not subject to production testing.
Notes 4: Switching time is essentially independent of operating temperature.

--

nS

2/4

Version: B13