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TO-220
ITO-220
PRODUCT SUMMARY
Pin
Definition
:
TSM10N80
800V N-Channel Power MOSFET
1. Gate
2. Drain
3. Source
General Description
The TSM10N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS
technology. This advanced technology has been especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic
lamp ballast based on half bridge.
VDS (V) R
800 1.05 @ V
(Ω) ID (A)
DS(on)
=10V 9.5
GS
Features
● Low R
● Low gate charge typical @ 53nC (Typ.)
● Improve dv/dt capability
DS(ON)
1.05Ω (Max.)
Block Diagram
Ordering Information
Part No. Package Packing
TSM10N80CZ C0 TO-220 50pcs / Tube
TSM10N80CI C0 ITO-220 50pc / Tube
N-Channel MOSFET
Absolute Maximum Rating
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 800 V
Gate-Source Voltage VGS ±30 V
Continuous Drain Current ID 9.5 A
Pulsed Drain Current * IDM 38 A
(Ta = 25oC unless otherwise noted)
Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V
Single Pulse Avalanche Energy (Note 2) EAS 917 mJ
Avalanche Current (Repetitive) (Note 1) IAR 9.5 A
Repetitive Avalanche Energy (Note 1) EAR 29 mJ
Operating Junction Temperature TJ 150 ºC
Storage Temperature Range T
* Limited by maximum junction temperature
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-55 to +150
STG
o
C
Version: A12
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c
TSM10N80
800V N-Channel Power MOSFET
Thermal Performance
Parameter Symbol Limit Unit
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient TO-220 / ITO-220
Notes: Surface mounted on FR4 board t ≤ 10sec
TO-220
RӨJC
0.43
o
C/W ITO-220 2.6
RӨJA 62.5
Electrical Specifications
(Tc = 25oC unless otherwise noted)
Parameter Conditions Symbol Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V
Drain-Source On-State Resistance V
Gate Threshold Voltage V
Zero Gate Voltage Drain Current V
Gate Body Leakage VGS = ±30V, VDS = 0V I
Forward Transconductance V
Diode Forward Voltage IS = 9.5A, VGS = 0V VSD -- -- 1.5 V
Dynamic b
Total Gate Charge
Gate-Source Charge Qgs -- 10 -Gate-Drain Charge Qgd -- 23 -Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Switching
Turn-On Delay Time
Turn-On Rise Time tr -- 62 -Turn-Off Delay Time t
Turn-Off Fall Time tf -- 72 -Reverse Recovery Time
Reverse Recovery Charge Qfr -- 5.3 -- uC
Notes:
1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2. VDD = 50V, IAS=9.5A, L=17.2mH, RG=25Ω
3. I
≤9.5A, di/dt ≤ 200A/uS, Vdd ≤ BV
SD
4. Pulse test: pulse width ≤300uS, duty cycle ≤2%
5. b For design reference only, not subject to production testing.
6. c Switching time is essentially independent of operating temperature.
= 0V, ID = 250uA BV
GS
= 10V, ID = 4.75A R
GS
= VGS, ID = 250uA V
DS
= 800V, VGS = 0V I
DS
= 30V, ID = 4.75A gfs -- 6.3 -- S
DS
800 -- -- V
DSS
-- 0.9 1.05 Ω
DS(ON)
2.0 -- 4.0 V
GS(TH)
-- -- 10 uA
DSS
-- -- ±100
GSS
Qg -- 53 --
V
= 640V, ID = 9.5A,
DS
V
= 10V
GS
C
V
= 25V, VGS = 0V,
DS
f = 1.0MHz
V
= 10V, ID = 9.5A,
GS
V
= 400V, RG = 25Ω
DD
V
= 0V, IS = 9.5A,
GS
-- 2336
iss
-- 214 --
oss
-- 29 --
rss
t
-- 63 --
d(on)
-- 256 --
d(off)
tfr -- 450 -- nS
--
dIF/dt = 100A/us
nA
nC
pF
nS
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800V N-Channel Power MOSFET
Electrical Characteristics Curve
(Tc = 25oC, unless otherwise noted)
TSM10N80
Output Characteristics
On-Resistance vs. Drain Current
Transfer Characteristics
Gate Charge
On-Resistance vs. Junction Temperature
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Source-Drain Diode Forward Voltage
Version: A12
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800V N-Channel Power MOSFET
Electrical Characteristics Curve
(Ta = 25oC, unless otherwise noted)
TSM10N80
Drain Current vs. Case Temperature
Maximum Safe Operating Area
BV
vs. Junction Temperature
DSS
Capacitance vs. Drain-Source Voltage
Maximum Safe Operating Area (ITO-220)
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800V N-Channel Power MOSFET
Electrical Characteristics Curve
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Ambient(ITO-220)
(Ta = 25oC, unless otherwise noted)
TSM10N80
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800V N-Channel Power MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveform
TSM10N80
EAS Test Circuit & Waveform
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800V N-Channel Power MOSFET
Diode Reverse Recovery Time Test Circuit & Waveform
TSM10N80
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800V N-Channel Power MOSFET
TO-220 Mechanical Drawing
TO-220 DIMENSION
DIM
A 10.00 10.50 0.394 0.413
B 3.74 3.91 0.147 0.154
C 2.44 2.94 0.096 0.116
D -- 6.35 -- 0.250
E 0.38 1.10 0.015 0.043
F 2.34 2.71 0.092 0.107
G 4.69 5.43 0.185 0.214
H 12.70 14.73 0.500 0.580
I 8.38 9.38 0.330 0.369
J 14.22 16.51 0.560 0.650
K 3.55 4.82 0.140 0.190
L 1.16 1.40 0.046 0.055
M 27.70 29.62 1.091 1.166
N 2.03 2.92 0.080 0.115
O 0.25 0.61 0.010 0.024
P 5.84 6.85 0.230 0.270
MILLIMETERS INCHES
MIN MAX MIN MAX
TSM10N80
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800V N-Channel Power MOSFET
ITO-220 Mechanical Drawing
ITO-220 DIMENSION
DIM
A 10.04 10.07 0.395 0.396
B 6.20 (typ.) 0.244 (typ.)
C 2.20 (typ.) 0.087 (typ.)
D ∮1.40 (typ.) ∮0.055 (typ.)
E 15.0 15.20 0.591 0.598
F 0.52 0.54 0.020 0.021
G 2.35 2.73 0.093 0.107
H 13.50 13.55 0.531 0.533
I 1.11 1.49 0.044 0.058
J 2.60 2.80 0.102 0.110
K 4.49 4.50 0.176 0.177
L 1.15 (typ.) 0.045 (typ.)
M 3.03 3.05 0.119 0.120
N 2.60 2.80 0.102 0.110
O 6.55 6.65 0.258 0.262
MILLIMETERS INCHES
MIN MAX MIN MAX
TSM10N80
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TSM10N80
800V N-Channel Power MOSFET
Notice
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assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
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sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
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