Rainbow Electronics TSM10N80 User Manual

TO-220

ITO-220

PRODUCT SUMMARY

Pin

Definition

:

TSM10N80

800V N-Channel Power MOSFET

1. Gate

2. Drain

3. Source

General Description

The TSM10N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS
technology. This advanced technology has been especially tailored to minimize on-state resistance, provide
superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic
lamp ballast based on half bridge.

VDS (V) R

800 1.05 @ V

(Ω) ID (A)

DS(on)

=10V 9.5

GS

Features

● Low R

● Low gate charge typical @ 53nC (Typ.)

● Improve dv/dt capability

DS(ON)

1.05Ω (Max.)

Block Diagram

Ordering Information

Part No. Package Packing

TSM10N80CZ C0 TO-220 50pcs / Tube
TSM10N80CI C0 ITO-220 50pc / Tube

N-Channel MOSFET

Absolute Maximum Rating

Parameter Symbol Limit Unit

Drain-Source Voltage VDS 800 V
Gate-Source Voltage VGS ±30 V
Continuous Drain Current ID 9.5 A
Pulsed Drain Current * IDM 38 A

(Ta = 25oC unless otherwise noted)

Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V
Single Pulse Avalanche Energy (Note 2) EAS 917 mJ
Avalanche Current (Repetitive) (Note 1) IAR 9.5 A
Repetitive Avalanche Energy (Note 1) EAR 29 mJ
Operating Junction Temperature TJ 150 ºC
Storage Temperature Range T

* Limited by maximum junction temperature

1/10

-55 to +150

STG

o

C

Version: A12

c

TSM10N80

800V N-Channel Power MOSFET

Thermal Performance

Parameter Symbol Limit Unit

Thermal Resistance - Junction to Case

Thermal Resistance - Junction to Ambient TO-220 / ITO-220

Notes: Surface mounted on FR4 board t ≤ 10sec

TO-220

RӨJC

0.43

o

C/W ITO-220 2.6

RӨJA 62.5

Electrical Specifications

(Tc = 25oC unless otherwise noted)

Parameter Conditions Symbol Min Typ Max Unit

Static

Drain-Source Breakdown Voltage V
Drain-Source On-State Resistance V
Gate Threshold Voltage V
Zero Gate Voltage Drain Current V
Gate Body Leakage VGS = ±30V, VDS = 0V I
Forward Transconductance V
Diode Forward Voltage IS = 9.5A, VGS = 0V VSD -- -- 1.5 V

Dynamic b

Total Gate Charge
Gate-Source Charge Qgs -- 10 -­Gate-Drain Charge Qgd -- 23 -­Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C

Switching

Turn-On Delay Time
Turn-On Rise Time tr -- 62 -­Turn-Off Delay Time t
Turn-Off Fall Time tf -- 72 -­Reverse Recovery Time
Reverse Recovery Charge Qfr -- 5.3 -- uC

Notes:

1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature

2. VDD = 50V, IAS=9.5A, L=17.2mH, RG=25Ω

3. I

≤9.5A, di/dt ≤ 200A/uS, Vdd ≤ BV

SD

4. Pulse test: pulse width ≤300uS, duty cycle ≤2%

5. b For design reference only, not subject to production testing.

6. c Switching time is essentially independent of operating temperature.

= 0V, ID = 250uA BV

GS

= 10V, ID = 4.75A R

GS

= VGS, ID = 250uA V

DS

= 800V, VGS = 0V I

DS

= 30V, ID = 4.75A gfs -- 6.3 -- S

DS

800 -- -- V

DSS

-- 0.9 1.05 Ω

DS(ON)

2.0 -- 4.0 V

GS(TH)

-- -- 10 uA

DSS

-- -- ±100

GSS

Qg -- 53 --

V

= 640V, ID = 9.5A,

DS

V

= 10V

GS

C

V

= 25V, VGS = 0V,

DS

f = 1.0MHz

V

= 10V, ID = 9.5A,

GS

V

= 400V, RG = 25Ω

DD

V

= 0V, IS = 9.5A,

GS

-- 2336

iss

-- 214 --

oss

-- 29 --

rss

t

-- 63 --

d(on)

-- 256 --

d(off)

tfr -- 450 -- nS

--

dIF/dt = 100A/us

nA

nC

pF

nS

2/10

Version: A12

800V N-Channel Power MOSFET

Electrical Characteristics Curve

(Tc = 25oC, unless otherwise noted)

TSM10N80

Output Characteristics

On-Resistance vs. Drain Current

Transfer Characteristics

Gate Charge

On-Resistance vs. Junction Temperature

3/10

Source-Drain Diode Forward Voltage

Version: A12