Rainbow Electronics TSM10N60 User Manual

Page 1
ITO-220
PRODUCT SUMMARY
Block Diagram
Pin
Definition
:
600V N-Channel MOSFET
1. Gate
2. Drain
3. Source
Features
VDS (V) R
600 0.75 @ V
DS(on)
TSM10N60
()(max)
=10V 10
GS
ID (A)
Advanced high dense cell design.
High Power and Current handing capability.
Application
Power Supply.
Lighting.
Ordering Information
Part No. Package Packing
TSM10N60CZ C0 TO-220 50pcs / Tube TSM10N60CI C0 ITO-220 50pcs / Tube
Absolute Maximum Rating
(TC = 25oC unless otherwise noted)
Parameter Symbol
Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V
Continuous Drain Current
TC = 25 oC
TC = 100 oC Pulsed Drain Current b I Total Power Dissipation @ TC=25C P Single Pulsed Avalanche Energy c EAS 41 mJ Operating Junction and Storage Temperature Range TJ, T
a
I
D
a
40 A
DM
166 50 W
DTOT
- 55 to +150
STG
N-Channel MOSFET
Limit
TO-220 ITO-220
10
6
Unit
A
o
C
Thermal Performance
Parameter Symbol Limit Unit
Junction to Case Thermal Resistance RӨJC 0.75 2.5 Junction to Ambient Thermal Resistance RӨJA 63
Notes a: Current limited by package Notes b: Pulse width limited by the Maximum junction temperature Notes c: L=0.75mH, IAS=10A, VDD=50V, RG=25, Starting Tj=25
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o
C/W
o
C/W
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600V N-Channel MOSFET
Specifications
Parameter Conditions Symbol
Statica
(Ta = 25oC unless otherwise noted)
TSM10N60
Min Typ Max Unit
Drain-Source Breakdown Voltage V Gate Threshold Voltage V Gate Body Leakage VGS = ±30V, VDS = 0V I Zero Gate Voltage Drain Current V
Drain-Source On-State Resistance
= 0V, ID = 250uA BV
GS
= VGS, ID = 250µA V
DS
= 600V, VGS = 0V I
DS
V
= 10V, ID = 5A
GS
600 -- --
DSS
2 3.1 4
GS(TH)
-- -- ±100
GSS
-- -- 20
DSS
R
DS(ON)
-- 0.61 0.75
Dynamicb
Total Gate Charge
V
= 300V, ID = 10A,
Gate-Source Charge Qgs -- 11.5 -­Gate-Drain Charge Qgd -- 16 --
DS
V
GS
= 10V
Input Capacitance
V
= 25V, VGS = 0V,
Output Capacitance C
DS
f = 1.0MHz
Reverse Transfer Capacitance C
Qg -- 45.8 --
C
-- 1738 --
iss
-- 195 --
oss
-- 26.3 --
rss
Switchingb
Turn-On Delay Time Turn-On Rise Time tr -- 7.4 -­Turn-Off Delay Time t
V
= 300V, RG = 10,
DD
ID = 10A, V
= 10V,
GS
t
-- 33.6 --
d(on)
-- 68 --
d(off)
Turn-Off Fall Time tf -- 15.2 --
V V
nA
µA
nC
pF
nS
Source-Drain Diodea
Forward On Voltage
IS=10A, VGS=0V VSD
Notes a: Pulse test: PW ≤300µS, duty cycle ≤2% Notes b: For DESIGN AID ONLY, not subject to production testing. Notes c: Switching time is essentially independent of operating temperature.
-- 0.8 1.5 V
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Page 3
600V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveform
TSM10N60
EAS Test Circuit & Waveform
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Page 4
600V N-Channel MOSFET
Diode Reverse Recovery Time Test Circuit & Waveform
TSM10N60
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Page 5
600V N-Channel MOSFET
Electrical Characteristics Curve
(Ta = 25oC, unless otherwise noted)
TSM10N60
Output Characteristics
Threshold Voltage
Transfer Characteristics
Gate Charge
On-Resistance vs. Junction Temperature
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Source-Drain Diode Forward Voltage
Version: C13
Page 6
600V N-Channel MOSFET
Electrical Characteristics Curve
(Ta = 25oC, unless otherwise noted)
TSM10N60
Capacitance Characteristics
Normalized Thermal Transient Impedance, Junction-to-Ambient
Maximum Safe Operating Area - ITO-220
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Page 7
600V N-Channel MOSFET
TO-220 Mechanical Drawing
TSM10N60
Unit: Millimeters
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Page 8
600V N-Channel MOSFET
ITO-220 Mechanical Drawing
TSM10N60
Unit: Millimeters
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Page 9
TSM10N60
600V N-Channel MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.
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