Rainbow Electronics TSM10N60 User Manual

TO-220

ITO-220

PRODUCT SUMMARY

Block Diagram

Definition

:

600V N-Channel MOSFET

1. Gate

2. Drain

3. Source

Features

VDS (V) R

600 0.75 @ V

DS(on)

TSM10N60

(Ω)(max)

=10V 10

GS

ID (A)

● Advanced high dense cell design.

● High Power and Current handing capability.

Application

● Power Supply.

● Lighting.

Ordering Information

Part No. Package Packing

TSM10N60CZ C0 TO-220 50pcs / Tube TSM10N60CI C0 ITO-220 50pcs / Tube

Absolute Maximum Rating

(TC = 25oC unless otherwise noted)

Parameter Symbol

Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V

Continuous Drain Current

TC = 25 oC

TC = 100 oC Pulsed Drain Current b I Total Power Dissipation @ TC=25C P Single Pulsed Avalanche Energy c EAS 41 mJ Operating Junction and Storage Temperature Range TJ, T

a

I

D

a

40 A

DM

166 50 W

DTOT

- 55 to +150

STG

N-Channel MOSFET

Limit

TO-220 ITO-220

10

6

Unit

A

o

C

Thermal Performance

Parameter Symbol Limit Unit

Junction to Case Thermal Resistance RӨJC 0.75 2.5 Junction to Ambient Thermal Resistance RӨJA 63

Notes a: Current limited by package Notes b: Pulse width limited by the Maximum junction temperature Notes c: L=0.75mH, IAS=10A, VDD=50V, RG=25Ω, Starting Tj=25℃

1/9

o

C/W

o

C/W

Version: C13

600V N-Channel MOSFET

Specifications

Parameter Conditions Symbol

Statica

(Ta = 25oC unless otherwise noted)

TSM10N60

Min Typ Max Unit

Drain-Source Breakdown Voltage V Gate Threshold Voltage V Gate Body Leakage VGS = ±30V, VDS = 0V I Zero Gate Voltage Drain Current V

Drain-Source On-State Resistance

= 0V, ID = 250uA BV

GS

= VGS, ID = 250µA V

DS

= 600V, VGS = 0V I

DS

V

= 10V, ID = 5A

GS

600 -- --

DSS

2 3.1 4

GS(TH)

-- -- ±100

GSS

-- -- 20

DSS

R

DS(ON)

-- 0.61 0.75

Dynamicb

Total Gate Charge

V

= 300V, ID = 10A,

Gate-Source Charge Qgs -- 11.5 -Gate-Drain Charge Qgd -- 16 --

DS

V

GS

= 10V

Input Capacitance

V

= 25V, VGS = 0V,

Output Capacitance C

DS

f = 1.0MHz

Reverse Transfer Capacitance C

Qg -- 45.8 --

C

-- 1738 --

iss

-- 195 --

oss

-- 26.3 --

rss

Switchingb

Turn-On Delay Time Turn-On Rise Time tr -- 7.4 -Turn-Off Delay Time t

V

= 300V, RG = 10Ω,

DD

ID = 10A, V

= 10V,

GS

t

-- 33.6 --

d(on)

-- 68 --

d(off)

Turn-Off Fall Time tf -- 15.2 --

V V

nA

µA

Ω

nC

pF

nS

Source-Drain Diodea

Forward On Voltage

IS=10A, VGS=0V VSD

Notes a: Pulse test: PW ≤300µS, duty cycle ≤2% Notes b: For DESIGN AID ONLY, not subject to production testing. Notes c: Switching time is essentially independent of operating temperature.

-- 0.8 1.5 V

2/9

Version: C13

600V N-Channel MOSFET

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveform

TSM10N60

EAS Test Circuit & Waveform

3/9

Version: C13