Rainbow Electronics TSM10N06 User Manual

TO-252

PRODUCT SUMMARY

Block Diagram

Pin

Definition

:

60V N-Channel MOSFET

(DPAK)

1. Gate

2. Drain

3. Source

VDS (V) R

65 @ VGS = 10V 10

(mΩ) ID (A)

DSON

TSM10N06

60

80 @ VGS = 5V 10

110 @ VGS = 4V 9

Features

● Advance Trench Process Technology

● High Density Cell Design for Ultra Low On-resistance

Application

● Load Switch

● PA Switch

Ordering Information

Part No. Package

TSM10N06CP RO

TO-252 2.5Kpcs / 13” Reel

Packing

Absolute Maximum Rating

Parameter Symbol Limit Unit

Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current ID 10 A
Pulsed Drain Current IDM 50 A
Continuous Source Current (Diode Conduction)
Total Power Dissipation @ TC=25C P
Operating Junction Temperature TJ +150
Operating Junction and Storage Temperature Range TJ, T

(TA = 25oC unless otherwise noted)

a,b

IS 10 A

N-Channel MOSFET

45 W

DTOT

- 55 to +150

STG

o

C

o

C

Thermal Performance

Parameter Symbol Limit Unit

Junction to Case Thermal Resistance RӨJC 2.78
Junction to Ambient Thermal Resistance (PCB mounted) RӨJA 50

Notes:

a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 10 sec.

1/6

o

C/W

o

C/W

Version: A10

TSM10N06

60V N-Channel MOSFET

Electrical Specifications

Parameter Conditions Symbol

Static

Drain-Source Breakdown Voltage V
Gate Threshold Voltage V
Gate Body Leakage VGS = ±20V, VDS = 0V I
Zero Gate Voltage Drain Current V

Drain-Source On-State Resistance

Forward Transconductance V
Diode Forward Voltage IS = 2A, VGS = 0V VSD -- 0.9 1.2 V

Dynamic2

Total Gate Charge
Gate-Source Charge Qgs -- 3.5 -­Gate-Drain Charge Qgd -- 4.2 -­Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C

Switching

Turn-On Delay Time
Turn-On Rise Time tr -- 15 25
Turn-Off Delay Time t
Turn-Off Fall Time tf -- 10 15

Notes 1: Pulse test: PW ≤300µS, duty cycle ≤2%
Notes 2: For DESIGN AID ONLY, not subject to production testing.
Notes 3: Switching time is essentially independent of operating temperature.

2,3

(Ta = 25oC unless otherwise noted)

= 0V, ID = 250uA BV

GS

= VGS, ID = 250µA V

DS

= 60V, VGS = 0V I

DS

V

= 10V, ID = 10A

GS

= 5V, ID = 10A -- -- 80

GS

V

= 4V, ID = 9A -- -- 110

GS

= 25V, ID = 6A gfs -- 13 -- S

DS

V

= 30V, ID = 9A,

DS

V

= 4.5V

GS

V

= 30V, VGS = 0V,

DS

f = 1.0MHz

V

= 30V, RL = 5.4Ω,

DD

ID = 9A, V

GEN

= 10V,

RG = 1Ω

Min Typ Max Unit

60 -- -- V

DSS

1 -- 3 V

GS(TH)

-- -- ±100 nA

GSS

-- -- 2 µA

DSS

-- -- 65

R

DS(ON)

Qg -- 10.5 16

C

-- 1100 --

iss

-- 90 --

oss

-- 55 --

rss

t

-- 10 15

d(on)

-- 25 40

d(off)

mΩ V

nC

pF

nS

2/6

Version: A10