● High Density Cell Design for Ultra Low On-resistance
Application
● Load Switch
● PA Switch
Ordering Information
Part No. Package
TSM10N06CP RO
TO-252 2.5Kpcs / 13” Reel
Packing
Absolute Maximum Rating
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current ID 10 A
Pulsed Drain Current IDM 50 A
Continuous Source Current (Diode Conduction)
Total Power Dissipation @ TC=25C P
Operating Junction Temperature TJ +150
Operating Junction and Storage Temperature Range TJ, T
(TA = 25oC unless otherwise noted)
a,b
IS 10 A
N-Channel MOSFET
45 W
DTOT
- 55 to +150
STG
o
C
o
C
Thermal Performance
Parameter Symbol Limit Unit
Junction to Case Thermal Resistance RӨJC 2.78
Junction to Ambient Thermal Resistance (PCB mounted) RӨJA 50
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 10 sec.
1/6
o
C/W
o
C/W
Version: A10
TSM10N06
60V N-Channel MOSFET
Electrical Specifications
Parameter Conditions Symbol
Static
Drain-Source Breakdown Voltage V
Gate Threshold Voltage V
Gate Body Leakage VGS = ±20V, VDS = 0V I
Zero Gate Voltage Drain Current V
Drain-Source On-State Resistance
Forward Transconductance V
Diode Forward Voltage IS = 2A, VGS = 0V VSD -- 0.9 1.2 V
Dynamic2
Total Gate Charge
Gate-Source Charge Qgs -- 3.5 -Gate-Drain Charge Qgd -- 4.2 -Input Capacitance
Output Capacitance C
Reverse Transfer Capacitance C
Switching
Turn-On Delay Time
Turn-On Rise Time tr -- 15 25
Turn-Off Delay Time t
Turn-Off Fall Time tf -- 10 15
Notes 1: Pulse test: PW ≤300µS, duty cycle ≤2%
Notes 2: For DESIGN AID ONLY, not subject to production testing.
Notes 3: Switching time is essentially independent of operating temperature.
2,3
(Ta = 25oC unless otherwise noted)
= 0V, ID = 250uA BV
GS
= VGS, ID = 250µA V
DS
= 60V, VGS = 0V I
DS
V
= 10V, ID = 10A
GS
= 5V, ID = 10A -- -- 80
GS
V
= 4V, ID = 9A -- -- 110
GS
= 25V, ID = 6A gfs -- 13 -- S
DS
V
= 30V, ID = 9A,
DS
V
= 4.5V
GS
V
= 30V, VGS = 0V,
DS
f = 1.0MHz
V
= 30V, RL = 5.4Ω,
DD
ID = 9A, V
GEN
= 10V,
RG = 1Ω
Min Typ Max Unit
60 -- -- V
DSS
1 -- 3 V
GS(TH)
-- -- ±100 nA
GSS
-- -- 2 µA
DSS
-- -- 65
R
DS(ON)
Qg -- 10.5 16
C
-- 1100 --
iss
-- 90 --
oss
-- 55 --
rss
t
-- 10 15
d(on)
-- 25 40
d(off)
mΩ V
nC
pF
nS
2/6
Version: A10
60V N-Channel MOSFET
Electrical Characteristics Curve
(Ta = 25oC, unless otherwise noted)
TSM10N06
Output Characteristics
On-Resistance vs. Drain Current
Transfer Characteristics
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/6
Version: A10
60V N-Channel MOSFET
Electrical Characteristics Curve
(Ta = 25oC, unless otherwise noted)
TSM10N06
On-Resistance vs. Gate-Source Voltage
Maximum Safe Operating Area
Threshold Voltage
4/6
Version: A10
= Year Code
= Month Code
= Lot Code
60V N-Channel MOSFET
TO-252 Mechanical Drawing
TO-252 DIMENSION
DIM
A 2.3BSC 0.09BSC
A1
B 6.80 7.20 0.268 0.283
C 5.40 5.60 0.213 0.220
D 6.40 6.65 0.252 0.262
E 2.20 2.40 0.087 0.094
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
6/6
Version: A10
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