Rainbow Electronics TSM05N03 User Manual

SOT

-

223

PRODUCT SUMMARY

DS(on)

Block Diagram

Pin

Definition

:

TSM05N03

30V N-Channel MOSFET

1. Gate

2. Drain

3. Source

VDS (V) R

60 @ V

30

90 @ V

(mΩ) ID (A)

=10V 5

GS

GS

=4.5V

3.8

Features

● Advance Trench Process Technology

● High Density Cell Design for Ultra Low On-resistance

Application

● Load Switch

● PA Switch

Ordering Information

Part No. Package

TSM05N03CW RPG SOT-223 2.5Kpcs / 13” Reel

Note: “G” denotes Halogen Free Product.

Packing

N-Channel MOSFET

Absolute Maximum Rating

Parameter Symbol Limit Unit

Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current ID 5 A

(Ta = 25oC unless otherwise noted)

Pulsed Drain Current IDM ±20 A
Continuous Source Current (Diode Conduction)

Maximum Power Dissipation

Operating Junction Temperature TJ +150
Operating Junction and Storage Temperature Range TJ, T

a,b

IS 1.7 A
Ta = 25oC
Ta = 75oC 1.1

PD

-55 to +150

STG

3

W

o

o

Thermal Performance

Parameter Symbol Limit Unit

o

Junction to Case Thermal Resistance RӨJC 15
Junction to Ambient Thermal Resistance (PCB mounted) RӨJA 45

Notes:

a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on a 1 in2 pad of 2oz Cu, t ≤ 5 sec.

C/W

o

C/W

C
C

1/4

Version: A12

Electrical Specifications

(Ta = 25oC unless otherwise noted)

30V N-Channel MOSFET

TSM05N03

Parameter Conditions Symbol

Min Typ Max Unit

Static

Drain-Source Breakdown Voltage V
Gate Threshold Voltage V
Gate Body Leakage VGS = ±20V, VDS = 0V I
Zero Gate Voltage Drain Current V
On-State Drain Current V

Drain-Source On-State Resistance
Forward Transconductance V

= 0V, ID = 250µA BV

GS

= VGS, ID = 250µA V

DS

= 30V, VGS = 0V I

DS

=5V, V

DS

V

= 10V, ID = 5A

GS

V

= 4.5V, ID = 3.8A -- 70 90

GS

= 10V, ID = 5A gfs -- 5 -- S

DS

= 10V I

GS

30 -- -- V

DSS

1 -- 3 V

GS(TH)

-- -- ±100 nA

GSS

-- -- 1.0 µA

DSS

5 -- -- A

D(ON)

R

DS(ON)

-- 46 60

Diode Forward Voltage IS = 2.5A, VGS = 0V VSD -- -- 1.2 V

Dynamicb

Total Gate Charge

V

= 10V, ID = 5A,

Gate-Source Charge Qgs -- 1.9 -­Gate-Drain Charge Qgd -- 1.35 --

V

DS
GS

= 5V

Input Capacitance

V

= 15V, VGS = 0V,

Output Capacitance C

DS

f = 1.0MHz

Reverse Transfer Capacitance C

Switching

b.c

Turn-On Delay Time

V

= 10V, RL = 15Ω,

Turn-On Rise Time tr -- 19 25
Turn-Off Delay Time t

DD

ID = 1A, V
RG = 6Ω

GEN

= 10V,

Qg -- 4.2 7

C

-- 555 --

iss

-- 120 --

oss

-- 60 --

rss

t

-- 4.2 5.5

d(on)

-- 13 17

d(off)

Turn-Off Fall Time tf -- 9 12

Notes:
a. pulse test: PW ≤300µS, duty cycle ≤2%
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.

mΩ

nC

pF

nS

2/4

Version: A12