
TSM05N03 
30V N-Channel MOSFET 
1. Gate 
2. Drain 
3. Source 
VDS (V)  R
60 @ V
30 
90 @ V
(mΩ)  ID (A)
=10V  5 
GS 
GS 
=4.5V
3.8 
Features 
● Advance Trench Process Technology 
● High Density Cell Design for Ultra Low On-resistance 
Application 
● Load Switch 
● PA Switch 
Ordering Information 
Part No.  Package
TSM05N03CW RPG SOT-223  2.5Kpcs / 13” Reel 
Note: “G” denotes Halogen Free Product. 
Packing 
N-Channel MOSFET 
Absolute Maximum Rating 
 Parameter  Symbol  Limit  Unit 
 Drain-Source Voltage  VDS  30  V 
 Gate-Source Voltage  VGS  ±20  V 
 Continuous Drain Current  ID  5  A 
(Ta = 25oC unless otherwise noted)
 Pulsed Drain Current  IDM  ±20  A 
 Continuous Source Current (Diode Conduction)
 Maximum Power Dissipation 
 Operating Junction Temperature  TJ  +150 
 Operating Junction and Storage Temperature Range  TJ, T
a,b
  IS  1.7  A 
Ta = 25oC 
Ta = 75oC  1.1 
PD 
  -55 to +150 
STG
3 
W 
o
o
Thermal Performance 
Parameter  Symbol  Limit  Unit 
o
Junction to Case Thermal Resistance  RӨJC  15 
Junction to Ambient Thermal Resistance (PCB mounted)  RӨJA  45 
Notes: 
a. Pulse width limited by the Maximum junction temperature 
b. Surface Mounted on a 1 in2 pad of 2oz Cu, t ≤ 5 sec. 
C/W 
o
C/W 
C 
C 
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Version: A12
 

Electrical Specifications 
(Ta = 25oC unless otherwise noted) 
30V N-Channel MOSFET 
TSM05N03 
Parameter  Conditions  Symbol
Min  Typ  Max  Unit 
Static 
Drain-Source Breakdown Voltage  V 
Gate Threshold Voltage  V 
Gate Body Leakage  VGS = ±20V, VDS = 0V  I 
Zero Gate Voltage Drain Current  V 
On-State Drain Current  V
Drain-Source On-State Resistance 
Forward Transconductance  V
= 0V, ID = 250µA  BV
GS 
= VGS, ID = 250µA  V
DS 
= 30V, VGS = 0V  I
DS 
=5V, V
DS 
V
= 10V, ID = 5A 
GS 
V
= 4.5V, ID = 3.8A  --  70  90 
GS 
= 10V, ID = 5A  gfs  --  5  --  S 
DS 
= 10V  I
GS 
  30  --  --  V 
DSS
  1  --  3  V 
GS(TH)
  --  --  ±100  nA 
GSS
  --  --  1.0  µA 
DSS
  5  --  --  A 
D(ON)
R
DS(ON)
--  46  60 
Diode Forward Voltage  IS = 2.5A, VGS = 0V  VSD  --  --  1.2  V 
Dynamicb 
Total Gate Charge 
V
= 10V, ID = 5A, 
Gate-Source Charge  Qgs  --  1.9  -Gate-Drain Charge  Qgd  --  1.35  -- 
V
DS 
GS 
= 5V 
Input Capacitance 
V
= 15V, VGS = 0V, 
Output Capacitance  C
DS 
f = 1.0MHz 
Reverse Transfer Capacitance  C
Switching
b.c
Turn-On Delay Time 
V
= 10V, RL = 15Ω, 
Turn-On Rise Time  tr  --  19  25 
Turn-Off Delay Time  t
DD 
ID = 1A, V 
RG = 6Ω 
GEN 
= 10V, 
Qg  --  4.2  7   
C
  --  555  --   
iss
  --  120  -- 
oss
  --  60  -- 
rss
t
  --  4.2  5.5 
d(on)
  --  13  17 
d(off)
Turn-Off Fall Time  tf  --  9  12 
Notes:  
a. pulse test: PW ≤300µS, duty cycle ≤2% 
b. For DESIGN AID ONLY, not subject to production testing. 
c. Switching time is essentially independent of operating temperature. 
mΩ 
nC 
pF 
nS 
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Version: A12
 

TSM05N03 
30V N-Channel MOSFET 
SOT-223 Mechanical Drawing 
SOT-223 DIMENSION 
DIM
A  6.350  6.850  0.250  0.270 
B  2.900  3.100  0.114  0.122 
C  3.450  3.750  0.136  0.148 
D  0.595  0.635  0.023  0.025 
E  4.550  4.650  0.179  0.183 
F  2.250  2.350  0.088  0.093 
G  0.835  1.035  0.032  0.041 
H  6.700  7.300  0.263  0.287 
K  1.550  1.800  0.061  0.071 
MILLIMETERS  INCHES 
MIN  MAX  MIN  MAX 
I  0.250  0.355  0.010  0.014 
J  10°  16°  10°  16° 
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Version: A12
 

TSM05N03 
30V N-Channel MOSFET 
Notice 
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assumes no responsibility or liability for any errors or inaccuracies. 
Information contained herein is intended to provide a product description only. No license, express or implied, to 
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Version: A12