SOT
-
223
PRODUCT SUMMARY
DS(on)
Block Diagram
Pin
Definition
:
TSM05N03
30V N-Channel MOSFET
1. Gate
2. Drain
3. Source
VDS (V) R
60 @ V
30
90 @ V
(mΩ) ID (A)
=10V 5
GS
GS
=4.5V
3.8
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Application
● Load Switch
● PA Switch
Ordering Information
Part No. Package
TSM05N03CW RPG SOT-223 2.5Kpcs / 13” Reel
Note: “G” denotes Halogen Free Product.
Packing
N-Channel MOSFET
Absolute Maximum Rating
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current ID 5 A
(Ta = 25oC unless otherwise noted)
Pulsed Drain Current IDM ±20 A
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction Temperature TJ +150
Operating Junction and Storage Temperature Range TJ, T
a,b
IS 1.7 A
Ta = 25oC
Ta = 75oC 1.1
PD
-55 to +150
STG
3
W
o
o
Thermal Performance
Parameter Symbol Limit Unit
o
Junction to Case Thermal Resistance RӨJC 15
Junction to Ambient Thermal Resistance (PCB mounted) RӨJA 45
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on a 1 in2 pad of 2oz Cu, t ≤ 5 sec.
C/W
o
C/W
C
C
1/4
Version: A12
Electrical Specifications
(Ta = 25oC unless otherwise noted)
30V N-Channel MOSFET
TSM05N03
Parameter Conditions Symbol
Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V
Gate Threshold Voltage V
Gate Body Leakage VGS = ±20V, VDS = 0V I
Zero Gate Voltage Drain Current V
On-State Drain Current V
Drain-Source On-State Resistance
Forward Transconductance V
= 0V, ID = 250µA BV
GS
= VGS, ID = 250µA V
DS
= 30V, VGS = 0V I
DS
=5V, V
DS
V
= 10V, ID = 5A
GS
V
= 4.5V, ID = 3.8A -- 70 90
GS
= 10V, ID = 5A gfs -- 5 -- S
DS
= 10V I
GS
30 -- -- V
DSS
1 -- 3 V
GS(TH)
-- -- ±100 nA
GSS
-- -- 1.0 µA
DSS
5 -- -- A
D(ON)
R
DS(ON)
-- 46 60
Diode Forward Voltage IS = 2.5A, VGS = 0V VSD -- -- 1.2 V
Dynamicb
Total Gate Charge
V
= 10V, ID = 5A,
Gate-Source Charge Qgs -- 1.9 -Gate-Drain Charge Qgd -- 1.35 --
V
DS
GS
= 5V
Input Capacitance
V
= 15V, VGS = 0V,
Output Capacitance C
DS
f = 1.0MHz
Reverse Transfer Capacitance C
Switching
b.c
Turn-On Delay Time
V
= 10V, RL = 15Ω,
Turn-On Rise Time tr -- 19 25
Turn-Off Delay Time t
DD
ID = 1A, V
RG = 6Ω
GEN
= 10V,
Qg -- 4.2 7
C
-- 555 --
iss
-- 120 --
oss
-- 60 --
rss
t
-- 4.2 5.5
d(on)
-- 13 17
d(off)
Turn-Off Fall Time tf -- 9 12
Notes:
a. pulse test: PW ≤300µS, duty cycle ≤2%
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
mΩ
nC
pF
nS
2/4
Version: A12
TSM05N03
30V N-Channel MOSFET
SOT-223 Mechanical Drawing
SOT-223 DIMENSION
DIM
A 6.350 6.850 0.250 0.270
B 2.900 3.100 0.114 0.122
C 3.450 3.750 0.136 0.148
D 0.595 0.635 0.023 0.025
E 4.550 4.650 0.179 0.183
F 2.250 2.350 0.088 0.093
G 0.835 1.035 0.032 0.041
H 6.700 7.300 0.263 0.287
K 1.550 1.800 0.061 0.071
MILLIMETERS INCHES
MIN MAX MIN MAX
I 0.250 0.355 0.010 0.014
J 10° 16° 10° 16°
3/4
Version: A12
TSM05N03
30V N-Channel MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
4/4
Version: A12
Loading...