Rainbow Electronics SIR-56ST3F User Manual

SIR-56ST3F

Sensors

Infrared light emitting diode, top view type

SIR-56ST3F
The SIR-56ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 950nm spectrum suitable for silicon detectors. Low cost make it an ideal light source for household remote control devices.
!!!!Applications
Optical control equipment Light source for remote control devices
!!!!Features
1) High efficiency, high output P
O=8.0mW (IF=50mA).
2) Emission spectrum well suited to silicon detectors.
3) Good current-optical output linearity.
4) Long life, high reliability.
!!!!Absolute maximum ratings (Ta = 25°C)
Parameter Symbol Forward current Reverse voltage Power dissipation Pulse forward current Operating temperature Storage temperature
Pulse width=0.1msec, duty ratio 1%
I
F
V P
I
FP
Topr Tstg
R
D
!!!!External dimensions (Units : mm)
φ5.0±0.2
8.7±0.3
1
20.6
(2.5)
2
Max.1
Min.24
2.5±1
φ6±0.3
Limits
100
5
160
1.0
25~+85
40~+85
20.5
1
Unit
mA
V
mW
A
°C °C
Notes:
1. Unspecified tolerance
shall be ±0.2.
2. Dimension in parenthesis are show for reference.
1
Anode
2
Cathode
1/3
SIR-56ST3F
Sensors
!!!!Electrical and optical characteristics (Ta = 25°C)
Parameter Optical output Emitting strength Forward voltage Reverse current Peak light emitting wavelength Spectral line half width Half-viewing angle Pesponse time Cut-off frequency
Symbol
O
P
I
E
V
F
I
R
P
λ
∆λ
θ
1 / 2
tr·tf
f
C
!!!!Electrical and optical characteristic curves
100
100
(mA)
F
80
60
40
20
FORWARD CURRENT : I
0
20 0 40 60 8020 100 AMBIENT TEMPERATURE : Ta (°C)
Fig.1 Forward current falloff
)
mA
(
F
80
60
40
20
FORWARD CURRENT : I
0
012
Fig.2 Forward current vs. forward voltage
20
(mW/sr)
E
(%)
E
200
100
Typ.
Min.
8.0
5.6
FORWARD VOLTAGE : VF (V)
1.3
950
40
±15
1.0
1.0
Max.
1.6 10
Unit mW
mW/sr
deg
MHz
25°C 0°C
25°C 50°C 75°C
I
F
=50mA
I
F
=50mA
V
F
=100mA
I V
R
µA nm nm
µs
=3V
I
F
=50mA
I
F
=50mA
F
=50mA
I
F
=50mA
I I
F
=50mA
100
(%)
O
80
60
40
20
RELATIVE OPTICAL OUTPUT : P
0 900 920 940 960 980 1000
Conditions
OPTICAL WAVELENGTH : λ (nm)
Fig.3 Wavelength
10
EMITTING STRENGTH : I
0
0 2040608010010 30 50 70 90
FORWARD CURRENT : I
Fig.4 Emitting strength vs.
forward current
F
(mA)
50
20
10
RELATIVE EMITTING STRENGTH : I
0−25 25 10050 75
AMBIENT TEMPERATURE : Ta (°C)
Fig.5 Relative emitting strength vs.
ambient temperature
2/3
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