SIR-56ST3F
Sensors
Infrared light emitting diode, top view type
SIR-56ST3F
The SIR-56ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous
efficiency and a 950nm spectrum suitable for silicon detectors. Low cost make it an ideal light source for household
remote control devices.
!!!!Applications
Optical control equipment
Light source for remote control devices
!!!!Features
1) High efficiency, high output P
O=8.0mW (IF=50mA).
2) Emission spectrum well suited to silicon detectors.
3) Good current-optical output linearity.
4) Long life, high reliability.
!!!!Absolute maximum ratings (Ta = 25°C)
Parameter Symbol
Forward current
Reverse voltage
Power dissipation
Pulse forward current
Operating temperature
Storage temperature
∗ Pulse width=0.1msec, duty ratio 1%
I
F
V
P
I
FP
Topr
Tstg
R
D
∗
!!!!External dimensions (Units : mm)
φ5.0±0.2
8.7±0.3
1
2−0.6
(2.5)
2
Max.1
Min.24
2.5±1
φ6±0.3
Limits
100
5
160
1.0
−25~+85
−40~+85
2− 0.5
1
Unit
mA
V
mW
A
°C
°C
Notes:
1. Unspecified tolerance
shall be ±0.2.
2. Dimension in parenthesis are
show for reference.
1
Anode
2
Cathode
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SIR-56ST3F
Sensors
!!!!Electrical and optical characteristics (Ta = 25°C)
Parameter
Optical output
Emitting strength
Forward voltage
Reverse current
Peak light emitting wavelength
Spectral line half width
Half-viewing angle
Pesponse time
Cut-off frequency
Symbol
O
P
I
E
V
F
I
R
P
λ
∆λ
θ
1 / 2
tr·tf
f
C
!!!!Electrical and optical characteristic curves
100
100
(mA)
F
80
60
40
20
FORWARD CURRENT : I
0
−20 0 40 60 8020 100
AMBIENT TEMPERATURE : Ta (°C)
Fig.1 Forward current falloff
)
mA
(
F
80
60
40
20
FORWARD CURRENT : I
0
012
Fig.2 Forward current vs. forward voltage
20
(mW/sr)
E
(%)
E
200
100
Typ.
Min.
8.0
−
5.6
FORWARD VOLTAGE : VF (V)
−
1.3
−
−
−
950
−
40
−
±15
−
1.0
−
1.0
−
Max.
−
−
1.6
10
−
−
−
−
−
Unit
mW
mW/sr
deg
MHz
−25°C
0°C
25°C
50°C
75°C
I
F
=50mA
I
F
=50mA
V
F
=100mA
I
V
R
µA
nm
nm
µs
=3V
I
F
=50mA
I
F
=50mA
F
=50mA
I
F
=50mA
I
I
F
=50mA
100
(%)
O
80
60
40
20
RELATIVE OPTICAL OUTPUT : P
0
900 920 940 960 980 1000
Conditions
OPTICAL WAVELENGTH : λ (nm)
Fig.3 Wavelength
10
EMITTING STRENGTH : I
0
0 2040608010010 30 50 70 90
FORWARD CURRENT : I
Fig.4 Emitting strength vs.
forward current
F
(mA)
50
20
10
RELATIVE EMITTING STRENGTH : I
0−25 25 10050 75
AMBIENT TEMPERATURE : Ta (°C)
Fig.5 Relative emitting strength vs.
ambient temperature
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