Rainbow Electronics SIR-34ST3F User Manual
SIR-34ST3F
Sensors
Infrared light emitting diode, top view type
SIR-34ST3F
The SIR-34ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency
and a 950nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation angle, marking
it ideal for compact optical control equipment.
!!!!Applications
Optical control equipment
Light source for remote control devices
!!!!Features
1) Compact (φ3.1mm).
2) High efficiency, high output P
O=8.0mW (IF=50mA).
3) Wide radiation angle θ=27°.
4) Emission spectrum well suited to silicon detectors
(λ
P=950nm).
5) Good current-optical output linearity.
6) Long life, high reliability.
!!!!Absolute maximum ratings (Ta = 25°C)
Parameter Symbol
Forward current
Reverse voltage
Power dissipation
Pulse forward current
Operating temperature
Storage temperature
∗ Pulse width=0.1msec, duty ratio 1%
I
F
V
P
I
FP
Topr
Tstg
R
D
∗
!!!!External dimensions (Units : mm)
φ3.8±0.3
φ3.5
φ3.1±0.2
1.1
4−0.6
Max.1
2− 0.5
2.5±1
2
1
(2.5)
Limits
100
5
160
1.0
−25~+85
−40~+85
Unit
mA
V
mW
A
°C
°C
Notes:
1. Unspecified tolerance
shall be ±0.2.
2. Dimension in parenthesis are
show for reference.
5.2±0.3
Min.24
1
Anode
2
Cathode
1/3
Sensors
!!!!Electrical and optical characteristics (Ta = 25°C)
Parameter
Optical output
Emitting strength
Forward voltage
Reverse current
Peak light emitting wavelength
Spectral line half width
Half-viewing angle
Pesponse time
Cut-off frequency
!!!!
Electrical and optical characteristic curves
100
80
(mA)
F
60
40
Symbol
O
P
I
E
V
F
I
R
P
λ
∆λ
θ
1 / 2
tr·tf
f
C
50
(mA)
F
40
30
20
Min.
−
3.5
−
−
−
−
−
−
−
Typ.
8.0
−
1.3
−
950
40
±27
1.0
1.0
Max.
−
28.0
1.6
10
−
−
−
−
−
−25°C
0°C
25°C
50°C
75°C
Unit
mW
mW/sr
V
µA
nm
nm
deg
µs
MHz
I
F
=50mA
F
=50mA
I
F
=100mA
I
V
R
=3V
F
=50mA
I
I
F
=50mA
F
=50mA
I
F
=50mA
I
I
F
=50mA
100
(%)
O
80
60
40
SIR-34ST3F
Conditions
20
FORWARD CURRENT : I
0
0 20406080100
AMBIENT TEMPERATURE : Ta (°C)
Fig.1 Forward current falloff
50
40
(mW/sr)
E
30
20
10
EMITTING STRENGTH : I
0
200 406080100
FORWARD CURRENT : I
F
(mA)
Fig.4 Emitting strength vs.
forward current
10
FORWARD CURRENT : I
0
012
FORWARD VOLTAGE : V
Fig.2 Forward current vs. forward voltage
(%)
E
200
100
50
20
RELATIVE EMITTING STRENGTH : I
10
0−20 20 8040 60
AMBIENT TEMPERATURE : Ta (°C)
F
(V)
Fig.5 Relative emitting strength
vs.ambient temperature
20
RELATIVE OPTICAL OUTPUT : P
0
900 920 940 960 980 1000
OPTICAL WAVELENGTH : λ (nm)
Fig.3 Wavelength
2/3
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