Rainbow Electronics SIR-341ST3F User Manual
SIR-341ST3F
Sensors
Infrared light emitting diode, top view type
SIR-341ST3F
The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous
efficiency and a 940nm peak wavelength suitable for silicon detectors. It is small and at the same time has a wide
radiation angle, marking it ideal for compact optical control equipment.
!!!!Applications
Optical control equipment
Light source for remote control devices
!!!!Features
1) Compact (φ3.1mm).
2) High efficiency, high output P
O=8.4mW (IF=50mA).
3) Wide radiation angle θ 1/2=±16deg.
4) Peak wavelength well suited to silicon detectors
(λ
P=940nm).
5) Good current-optical output linearity.
6) Long life, high reliability.
!!!!Absolute maximum ratings (Ta = 25°C)
Parameter Symbol
Forward current
Reverse voltage
Power dissipation
Pulse forward current
Operating temperature
Storage temperature
∗ Pulse width=0.1msec, duty ratio 1%
I
F
V
P
I
FP
Topr
Tstg
R
D
!!!!External dimensions (Units : mm)
φ3.8±0.3
φ3.5
φ3.1±0.2
4−0.6
2− 0.5
2
1
(2.5)
Limits
75
5
100
∗
1.0
−25~+85
−40~+85
Unit
mA
V
mW
A
°C
°C
Notes:
1. Unspecified tolerance
2. Dimension in parenthesis are
1.1
5.2±0.3
Max.1
Min.24
2.5±1
1
shall be ±0.2.
show for reference.
Anode
2
Cathode
1/3
Sensors
!!!!Electrical and optical characteristics (Ta = 25°C)
Parameter
Optical output
Emitting strength
Forward voltage
Reverse current
Peak light emitting wavelength
Spectral line half width
Half-viewing angle
Pesponse time
Cut-off frequency
!!!!
Electrical and optical characteristic curves
100
80
(mA)
F
60
40
Symbol
O
P
I
E
V
F
I
R
P
λ
∆λ
θ
1 / 2
tr·tf
f
C
50
(mA)
F
40
30
20
Min.
−
5.6
−
−
−
−
−
−
−
Typ.
8.4
18.1
1.3
−
940
40
±16
1.0
1.0
Max.
−
−
1.5
10
−
−
−
−
−
−25°C
0°C
25°C
50°C
75°C
Unit
mW
mW/sr
V
µA
nm
nm
deg
µs
MHz
I
F
=50mA
F
=50mA
I
F
=50mA
I
V
R
=3V
F
=50mA
I
I
F
=50mA
F
=50mA
I
F
=50mA
I
I
F
=50mA
100
(%)
O
SIR-341ST3F
Conditions
80
60
40
20
FORWARD CURRENT : I
0
0 20406080100
AMBIENT TEMPERATURE : Ta (°C)
Fig.1 Forward current falloff
50
40
(mW/sr)
E
30
20
10
EMITTING STRENGTH : I
0
200 406080100
FORWARD CURRENT : I
F
(mA)
Fig.4 Emitting strength vs.
forward current
10
FORWARD CURRENT : I
0
012
FORWARD VOLTAGE : V
Fig.2 Forward current vs. forward voltage
(%)
E
200
100
50
20
RELATIVE EMITTING STRENGTH : I
10
0−20 20 8040 60
AMBIENT TEMPERATURE : Ta (°C)
Fig.5 Relative emitting strength
vs.ambient temperature
F
(V)
20
RELATIVE OPTICAL OUTPUT : P
0
900 920 940 960 980
OPTICAL WAVELENGTH : λ (nm)
Fig.3 Wavelength
2/3
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