Rainbow Electronics SIM-012ST User Manual

SIM-012ST
Sensors
High power chip sensor, side view type
SIM-012ST
The SIM-012ST is ultra small size and high power ohip sensor. Original technology, original structure and original Optical design enable to use Automatic moantinig machine, Reflow, ultra smallsize, High power.
Optical control equipment Light source for remote control devices
zFeatures
1) High power by φ2 lenze.
2) Emitting pore can have 7time high power then substruk type with parabola structure.
3) Ultra-compact surface mount p ackage. (3mmx3mmx2mm)
4) It is possible to do Refliw .
zAbsolute maximum ratings (Ta = 25°C)
Parameter Symbol
I
Forward current Reverse voltage power dissipation Pulse forward current Operating temperature Storage temperature
Pulse width=0.1msec, duty ratio 1%
F
V P
I
FP
Topr Tstg
R
D
zExternal dimensions (Units : mm)
2-0.4
12
R1
Limits
40
5
60
0.5
30~+85
40~+100
Unit
mA
V
mW
A
°C °C
0.25
0.8
Note)
1.Unspecified tolerance shall be
2.Dimension in parenthesis are show for
2
3
3
2
Internal connection diagram
2
1
+
0.2.
reference.
1/3
SIM-012ST
Sensors
zElectrical and optical characteristics (Ta = 25°C)
Parameter Symbol
P
∆λ
θ
tr·tf
V
λ
I
I
1 / 2
f
O
E
F
R
P
C
Optical output Emitting strength Forward voltage Reverse current peak light emitting wavelength Spectral line half width Half-viewing angle Pesponse time Cut-off frrequency
zElectrical and optical characteristic curves
50
(mA)
F
40
30
20
10
FORWARD CURRENT : I
0
20 0 40 60 8020 100 AMBIENT TEMPERATURE : Ta (°C)
50
(mA)
F
40
30
20
10
FORWARD CURRENT : I
0
Fig.1Forward current faloff
1000
(%)
E
(%)
O
100
80
Typ.
Min.
3.5
0.9
0
1.2
950
40
− ±12
1.0
1.0
FORWARD VOLTAGE : VF (V)
1
Fig.2Forwardcurrentvs.
forwardvoltage
Max.
7.1
1.5 10
25
0
25 50 75
Unit mW
mW/sr
V µA nm nm
deg
µs
MHz
°C
°C
°C °C °C
I
F
=20mA
I
F
=20mA
F
=20mA
I V
R
=3V
F
=20mA
I
F
=20mA
I
F
=20mA
I
F
=20mA
I I
F
=20mA
8
6
(mW/sr)
E
4
2
EMITTING STRENGTH : I
2
0
Conditions
100203040
FORWARD CURRENT : I
Fig.3 Emitting strength vs.
forward currnt
F
(mA)
100
RELATIVE EMITTING STRENGTH : I
10
25−50
0
25 10050 75
AMBIENT TEMPERATURE : Ta (°C)
Fig.4 Relative emitting strength vs.ambient temperature
60
40
20
RELATIVE OPTICAL OUTPUT : P
0 900 920 940 960 980 1000
OPTICAL WAVELENGTH : λ (nm)
Fig.5 Wavelength
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