SIM-012ST
Sensors
High power chip sensor, side view type
SIM-012ST
The SIM-012ST is ultra small size and high power ohip sensor. Original technology, original structure and original
Optical design enable to use Automatic moantinig machine, Reflow, ultra smallsize, High power.
zApplica tions
Optical control equipment
Light source for remote control devices
zFeatures
1) High power by φ2 lenze.
2) Emitting pore can have 7time high power then
substruk type with parabola structure.
3) Ultra-compact surface mount p ackage.
(3mmx3mmx2mm)
4) It is possible to do Refliw .
zAbsolute maximum ratings (Ta = 25°C)
Parameter Symbol
I
Forward current
Reverse voltage
power dissipation
Pulse forward current
Operating temperature
Storage temperature
∗ Pulse width=0.1msec, duty ratio 1%
F
V
P
I
FP
Topr
Tstg
R
D
∗
zExternal dimensions (Units : mm)
2-0.4
12
R1
Limits
40
5
60
0.5
−30~+85
−40~+100
Unit
mA
V
mW
A
°C
°C
0.25
0.8
Note)
1.Unspecified tolerance shall be
2.Dimension in parenthesis are show for
2
3
3
2
Internal connection diagram
2
1
+
0.2.
−
reference.
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SIM-012ST
Sensors
zElectrical and optical characteristics (Ta = 25°C)
Parameter Symbol
P
∆λ
θ
tr·tf
V
λ
I
I
1 / 2
f
O
E
F
R
P
C
Optical output
Emitting strength
Forward voltage
Reverse current
peak light emitting wavelength
Spectral line half width
Half-viewing angle
Pesponse time
Cut-off frrequency
zElectrical and optical characteristic curves
50
(mA)
F
40
30
20
10
FORWARD CURRENT : I
0
−20 0 40 60 8020 100
AMBIENT TEMPERATURE : Ta (°C)
50
(mA)
F
40
30
20
10
FORWARD CURRENT : I
0
Fig.1Forward current faloff
1000
(%)
E
(%)
O
100
80
Typ.
Min.
3.5
−
0.9
0
−
1.2
−
−
−
950
−
40
−
±12
−
1.0
−
1.0
−
FORWARD VOLTAGE : VF (V)
1
Fig.2Forwardcurrentvs.
forwardvoltage
Max.
−
7.1
1.5
10
−
−
−
−
−
−25
0
25
50
75
Unit
mW
mW/sr
V
µA
nm
nm
deg
µs
MHz
°C
°C
°C
°C
°C
I
F
=20mA
I
F
=20mA
F
=20mA
I
V
R
=3V
F
=20mA
I
F
=20mA
I
F
=20mA
I
F
=20mA
I
I
F
=20mA
8
6
(mW/sr)
E
4
2
EMITTING STRENGTH : I
2
0
Conditions
100203040
FORWARD CURRENT : I
Fig.3 Emitting strength vs.
forward currnt
F
(mA)
100
RELATIVE EMITTING STRENGTH : I
10
−25−50
0
25 10050 75
AMBIENT TEMPERATURE : Ta (°C)
Fig.4 Relative emitting strength
vs.ambient temperature
60
40
20
RELATIVE OPTICAL OUTPUT : P
0
900 920 940 960 980 1000
OPTICAL WAVELENGTH : λ (nm)
Fig.5 Wavelength
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