RPT-38PB3F
Sensors
Phototransistor, top view type
RPT-38PB3F
The RPT-38PB3F is a silicon planar phototransistor. Since it is molded in plastic with a visible light filter, there is almost no
effect from stray light. It is particularly suited for use with a ROHM SIR-34ST3F infrared light emitting diode.
!!!!Application
Optical control equipment
Receiver for sensors
!!!!Features
1) High sensitivity.
2) Almost no effect from stray light.
!!!!Absolute maximum ratings (Ta = 25°C)
Parameter Symbol
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
V
CEO
V
ECO
I
C
P
Topr
Tstg
C
!!!!Electrical and optical characteristics (Ta = 25°C)
Parameter Symbol
Light current
Dark current
Peak sensitivity wavelength
Collector-emitter saturation voltage
Half-angle
Response time
V
I
CE(sat)
θ
I
CEO
λ
1 / 2
tr·t
Min.
C
2.0
−
P
−
−
−
f
−
!!!!External dimensions (Units : mm)
φ3.4
φ3.1±0.2
4−0.6
2− 0.5
2
1
(2.5)
Limits
32
5
30
150
−25~+85
−30~+100
Typ.
−
−
800
−
±36
10
Max.
0.5
0.4
Unit
V
V
mA
mW
°C
°C
Unit
−
mA V
µA
nm
−
V
deg
−
µs
−
CE
=5V, E=500L
VCE=10V(Black box)
C
=1mA, E=500L
I
CC
=5V, IC=1mA, RL=100Ω
V
Notes:
1. Unspecified tolerance
+0.1
−0.3
1.1Max.1
2.5±1
shall be ±0.2 .
2. Dimension in parenthesis are
show for reference.
0.3
±
5.2
Min.24
Internal connection diagram
1
Emitter Collector
Conditions
X
−
X
−
2
1/2
RPT-38PB3F
Sensors
!!!!Electrical and optical characteristic curves
1000
(nA)
100
CEO
10
1
DARK CURRENT : I
0.1
AMBIENT TEMPERATURE : Ta
Fig.1 Dark current
vs. ambient temperature
10
8
(mA)
C
6
4
LIGHT CURRENT : I
2
0
COLLECTOR−EMITTER VOLTAGE : V
E=1000Lux
Fig.4 Output characteristics
1000
(µs)
r
100
10
RESPONSE TIME : t
1
0.1 110
COLLECTOR CURRENT : I
Fig.7 Response time vs.
collector current
750Lux
500Lux
250Lux
VCE=10V
CE
=20V
V
CE
=30V
V
(°C)
CE
Ta=25°C
VCE=5V
RL=1kΩ
RL=500Ω
RL=100Ω
C
(mA)
(V)
1000
500
(%)
C
200
100
50
20
RELATIVE LIGHT CURRENT : I
10
100−25 0 25 50 75
−25 75 10050250
AMBIENT TEMPERATURE : Ta
Fig.2 Relative output
100
(%)
C
75
50
25
RELATIVE SENSITIVITY : I
1602468101214
0
OPTICAL WAVELENGTH : λ (nm)
Fig.5 Spectral sensitivity
60°
70°
80°
90°
100 80 60 40 20
RELATIVE LUMINOUS INTENSITY (%)
(°C)
vs. ambient temperature
600400 800 1000 1200 1600
10°
20°
30°
40°
50°
Fig.8 Directional pattern
0
8
VCE=5V
6
(mA)
C
4
2
LIGHT CURRENT : I
0 250 500 750 12501000
ILLUMINANCE : E (Lx)
Fig.3 Light current vs. irradiance
(mW)
160
C
120
80
40
COLLECTOR DISSIPATION : P
0
−25 0 25 50 75 100
AMBIENT TEMPERATURE : Ta (°C)
Fig.6 Collector dissipation vs.
ambient temperature
10°0°20° 30° 40° 50° 60° 70° 80° 90°
ANGULAR DISPLACEMENT (deg)
100
80
60
40
20
RELATIVE LUMINOUS INTENSITY (%)
2/2