Rainbow Electronics RPT-34PB3F User Manual

Sensors

Phototransistor, top view type

RPT-34PB3F

The RPT-34PB3F is a silicon planar phototransistor.
It is particularly suited for use with a ROHM SIR-34ST3F infrared light emitting diode.

RPT-34PB3F

!!!!Applications

Optical control equipment

!!!!

Features

High sensitivity.

!!!!Absolute maximum ratings (Ta = 25°C)

Parameter Symbol
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature

V

CEO

V

ECO

C

I

P
Topr
Tstg

!!!!

External dimensions

2−0.6
2−0.5

Limits

32

5

30

C

150

−25~+85

−30~+100

Unit

V
V

mA

mW

°C
°C

(Units : mm)

φ3.8±0.3

φ3.5
φ

3.1±0.2

1

(2.5)

Notes :

1. Unspecfied tolerance
shall be ±0.2.

2. Dimension in parenthesis
are show for reference.

1.11.0

5.2±0.3

Max.

24.0Min.

2.5±1.0

2

Internal connection diagram

1

Emitter Collector

2

!!!!Electrical and optical characteristics (Ta = 25°C)

Parameter Symbol
Light current
Dark current
Peak sensitivity wavelength
Collector-emitter saturation voltage
Half-angle
Response time

V

I

CE(sat)

θ

I

CEO

λ

1 / 2

tr·t

Min.

C

2.0

−

P

−

−

−

f

−

Typ.

−

−

800

−

±36

10

Max.

−

0.5

−

0.4

−

−

Unit

CE

mA V

µA

VCE=10V(Black box)

nm

C

=1mA, E=500L

V

I

deg

CC

V

µs

Conditions

=5V, E=500L

X

−

X

−

=5V, IC=1mA, RL=100Ω

1/2

Sensors

!!!!Electrical and optical characteristic curves

1000

)

(%

1000

nA)

(

100

CEO

10

1

DARK CURRENT : I

0.1

AMBIENT TEMPERATURE : Ta (°C)

Fig.1 Dark current

vs. ambient temperature

10

mA)
(

C

8

6

4

2

COLLECTOR CURRENT : I

0

COLLECTOR−EMITTER VOLTAGE : V

Fig.4 Output characteristics

VCE=10V
V
V

E=1000Lux

750Lux

500Lux

250Lux

CE
CE

=20V
=30V

CE

(V)

C

500

200

100

50

20

10

RELATIVE COLLECTOR CURRENT : I

100−25 0 25 50 75

100

80

(%)

C

60

40

20

RELATIVE SENSITIVITY : I

1602468101214

0
400 500 600 700 800 900 1000 1100

−25 75 10050250
AMBIENT TEMPERATURE : Ta (°C)

Fig.2 Relative output

vs. ambient temperature

OPTICAL WAVELENGTH : λ (

Fig.5 Spectral sensitivity

nm)

RPT-34PB3F

8

VCE=5V

(mA)

C

6

4

2

COLLECTOR CURRENT : I

0 250 500 750 12501000

ILLUMINANCE : E (

Fig.3 Light current vs. irradiance

mW)

(

160

C

120

80

40

COLLECTOR DISSIPATION : P

0

−25 0 25 50 75 100
AMBIENT TEMPERATURE : Ta (°C)

Fig.6 Collector dissipation vs.

ambient temperature

Lx)

1000

s)

(µ

r

100

10

RESPONSE TIME : t

1

0.1 110
COLLECTOR CURRENT : IC (

Fig.7 Response time vs.

collector current

Ta=25°C
VCE=5V

RL=1kΩ

RL=500Ω

RL=100Ω

mA)

90°

80°

70°

60°

50°

40°

10°

20°

30°

Fig.8 Directional pattern

0°

10° 20° 30° 40° 50° 60° 70° 80° 90°

0

ANGULAR DISPLACEMENT : θ (

100

80

60

40

20

RELATIVE LUMINOUS INTENSITY: (%)

deg

)RELATIVE LUMINOUS INTENSITY : (%)

2/2