RPM-075PT
Sensors
Phototransistor, surface mount type
RPM-075PT
Quite new phototransistor which peak sensitivity is designed as same level as human eye. Best sensor to detect
illuminance. (Peak sensitivity is 600nm.) Small and light weight package which can be used for reflow soldering and Pd
free soldering.
!!!!Application
Control of lighting cellular phones, LCD displays, etc.
Control of strobe. (DSC, camcorder, etc.)
!!!!Features
1) Best sensor to detect illuminance.
(Peak sensitivity is 600nm.)
2) Small (2125) and light weight package (3mg) which
can be used for reflow soldering and Pd free
soldering.
3) Linear against wide range of illuminance from a few
Lx to 10000Lx over.
4) Use Si good for an environ ment. (not CdS)
!!!!Absolute maximum ratings (Ta=25°C)
Parameter Symbol
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
CEO
V
V
ECO
I
C
P
Topr
Tstg
C
Limits
−30∼+85
−40∼+100
20
10
50
!!!!External dimensions (Units : mm)
Unspecified tolerance
shall be ±0.1
(0.15)
Unit
V
5
V
mA
mW
˚C
˚C
Emitter mark
1.25
1.4
+0.2
2.0
−0
0.8
0.25
1.2
12
1
Emitter Collector
2
!!!!
Electrical and optical characteristics
Parameter Symbol
Light current
Dark current
Peak sensitivity wavelength
Collector-emitter saturation voltage
Half-angle
Response time
C
I
I
CEO
λ
P
V
CE
(sat)
θ
1/2
tr·tf
(Ta=25°C)
Min.
0.25
−
−
−
−
−
Typ.
0.4
−
600
−
±60
10
Max.
0.6
0.5
−
0.4
−
−
Unit
mA
µA
nm
V
deg
µs
Conditions
V
CE
=
5V, E=500Lx
V
CE
=
10V (Black box)
I
C
=
0.1mA, E=500Lx
V
CC
=
C
=
I
5V,
−
−
1mA,
L
=
R
100Ω
1/2
Sensors
!!!!Electrical and optical characteristic curves
RPM-075PT
1.6
1.4
(mA)
1.2
C
1
0.8
0.6
0.4
0.2
COLLECTOR CURRENT : I
0
250 5000 750 1000 1250
ILLUMINANCE : E
VCE=5V
(Lx)
Fig.1 Collector current-Illuminance
10000
1000
(nA)
100
CEO
10
1
DARK CURRENT : I
0.1
0.01
−25−50 0 25 50 75 100
AMBIENT TEMPERATURE : Ta (°C)
VCE=10V
VCE=20V
VCE=30V
Fig.4 Dark current-Ambient temperature
1
(mA)
C
0.5
COLLECTOR CURRENT : I
0
120345
COLLECTOR-EMITTER VOLTAGE : VCE
Fig.2 Output characteristics
120
100
(%)
C
80
60
40
20
RELATIVE SENSITIVITYT : I
0
500 600 700400 800 900 1000 1100
OPTICAL WAVELENGTH : λ
Fig.7 Spectral sensitivity characteristics
E=1000Lx
E=750Lx
E=500Lx
E=250Lx
(nm)
1000
(%)
C
100
10
1
RELATIVE COLLECTOR CURRENT : I
−25−50 0 25 50 75 100
(V)
AMBIENT TEMPERATURE : Ta
Fig.3 Relative output-Ambient temperature
120
100
(mW)
C
80
60
40
20
COLLECTOR DISSIPATION : P
0
025−25 50 75 100
AMBIENT TEMPERATURE : Ta (°C)
Fig.6 Collector dissipation
-Ambient temperature
(°C)
1000
1000
RESPONSE TIME : tr (µs)
100
RL=100kΩ
RL=50kΩ
RL=20kΩ
0.01 0.1 10.001 10 100
COLLECTOR CURRENT : IC (mA)
Fig.7 Response time-Collector current
Ta=25C
CC=5V
V
RL=1kΩ
100
90
(%)
80
70
60
50
40
30
20
10
RELATIVE EMITTING STRENGTH
0
−60 −30 0−90 30 60 90
ANGULAR DISPLACEMENT : θ
Fig.8 Directional pattern
(deg)
100
90
(%)
80
70
60
50
40
30
20
10
RELATIVE EMITTING STRENGTH
0
−60 −30 0−90 30 60 90
ANGULAR DISPLACEMENT : θ
Fig.9 Directional pattern
(deg)
2/2