
RPM-012PB
Sensors
High Sensitivity Chip Sensor, Side veiw 
type
RPM-012PB
The RPM-012PB is ultra small si ze and high sen sitivity chip sens or. Original technology, original structu re and original 
optical design enable to use Automatic mounting machine, Reflow, ultra small size, high sensitivity.
External dimensions 
Application
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Optical control equipment 
Receiver for sen sors
Features
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1) High sensitivity by φ2 lenze.
2) Ultra-compact surface mount package. 
  (3mm x 3mm x 2mm)
3) It is possibl e to do Ref low.
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(Units : mm)
Note)
0.25
2-0.4
12
R1
0.8
2
3
3
2
1.Unspecified tolerance shall be 
2.Dimension in parenthesis are show for
+
0.2.
− 
reference.
Absolute maximum ratings 
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(T a=25°C)
Parameter Symbol 
Collector-emitter voltage 
Emitter-collector voltage
V
V 
Collector current 
Collector power dissipation 
Operating temperature 
Storage temperature
Electrical and optical characteristics 
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Parameter Symbol 
Light current 
Dark current 
Peak sensitivity wavelength 
Collector-emitter saturation voltage 
Half-angle 
Response time
Topr 
Tstg
P
CEO
ECO
I
C
V
C
I
CE
I
CEO
λ
θ
tr·tf
(T a=25°C)
C
P
(sat)
1/2
−40∼+100
Min.
0.56
−
−
−
−
−
Limits
32
5 
20 
75
−30∼+85
Typ.
1.6
−
800
−
±12
10
Max.
2.8
0.5
−
0.4
−
−
Unit
V 
V
mA
mW
˚C 
˚C
Unit
mA
µA
nm
V
deg
µs
Conditions
VCE=
5V, E=500Lx
VCE=
10V (Black box)
IC=
0.1mA, E=500Lx
VCC=
C
=
I
5V, 
−
−
1mA, 
L
=
R
100Ω
Internal connection diagram
1
2
1/2
 

Sensors
Electrical and optical characteristic curves
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RPM-012PB
4
 (mA)
3
C
2
1
COLLECTOR CURRENT : I
0
250 5000 750 1000 1250
ILLUMINANCE : E
VCE=5V
 (Lx)
Fig.1 Collector current−llluminance
10000
1000
 (nA)
100
CEO
10
1
DARK CURRENT : I
0.1
0.01
−25−50 0 25 50 75 100
AMBIENT TEMPERATURE : Ta
VCE=10V 
VCE=20V
VCE=30V
Fig.4 Dark current−Ambient temperature
 (°C)
4
 (mA)
C
3
2
1
COLLECTOR CURRENT : I
0
10 20030
COLLECTOR-EMITTER VOLTAGE : VCE 
Fig.2 Output characteristics
100
80
 (%)
C
60
40
20
RELATIVE SENSITIVITYT : I
0
500 600 700400 800 900 1000 1100 1200
OPTICAL WAVELENGTH : λ
Fig.5 Spectral sensitivity characteristics
E=1000Lx
E=750Lx
E=500Lx
E=250Lx
 (nm)
1000
 (%)
C
100
10
1
RELATIVE COLLECTOR CURRENT : I
(V)
−25−50 0 25 50 75 100
AMBIENT TEMPERATURE : Ta
Fig.3 Relative output−Ambient temperature
1000
 (µs)
100
10
RESPONSE TIME : tr
1
0.1 1 10 100 
COLLECTOR CURRENT : I
Fig.6 Response time-Collector current
RL=1kΩ
RL=500Ω
RL=100Ω
C
 (°C)
Ta=25 C
CC
V
 (mA)
=10V
100
90
(%)
80 
70
60 
50 
40 
30 
20 
10
RELATIVE EMITTING STRENGTH 
0
−90 0 90
−60 −30 30 60
ANGULAR DISPLACEMENT : θ 
−+
(deg)
Fig.7 Directional pattern(1)
0
90
(%)
80 
70
60 
50 
40 
30 
20 
10
RELATIVE EMITTING STRENGTH 
0
−90 0 90
−60 −30 30 60
ANGULAR DISPLACEMENT : θ 
0
−+
(deg)
100
Fig.8 Directional pattern(2)
2/2