RPI-441C1
Sensors
Photointerrupter, double-layer mold type
RPI-441C1
The RPI-441C1 is a compact, double-layer mold photointerrupter.
While the gap has a width of 4mm, the body has the compact dimensions of 8mm(w) × 5.2mm(h) × 4.2mm(d).
z
zApplications
zz
Optical control equipment
Facsimiles
Printers
z
zFeatures
zz
1) Compact with a 4mm gap.
2) High precision po sition detect ion(sli t widt h of 0.5m m).
3) Minimal influence from stray light.
4) Low col l e ctor-emitter vol ta g e.
z
zAbsolute maximum ratings (T a = 2 5°C)
zz
)
LED
(
Input
Output
photo-
Operating temperature
Storage temperature
Parameter Symbol
Forward current
Reverse voltage
Power dissipation
Collector-emitter voltage
)
Emitter-collector voltage
Collector current
transistor
(
Collector power dissipation
I
F
V
P
V
CEO
V
ECO
C
I
P
Topr
Tstg
R
D
C
zzzz
External dimensions
4.2
0.5
4.2
5.2
3.6±0.5
4−0.2
Limits
50
5
80
30
4.5
30
80
−25~+85
−30~+85
8±0.5
4±0.5
(6.7)
3.25±0.1
Unit
mA
V
mW
V
V
mA
mW
°C
°C
Gap
3.6
A
A
(Units : mm)
Notes:
1. Tolerances are ±0.2 unless otherwise
indicated.
2. Values in parenthesis are for reference.
Cross-section A-A
1.2
Optical axis
center
+0
−0.05
Cathode
Anode
1.2 (2.4)
(2.5)
Collector
Emitter
CO.4
φ1.2
2−C0.6
4−0.5
Sensors
z
zElectrical and optical characteristics (T a = 25°C)
zz
Parameter Symbol
V
V
F
I
R
I
CEO
λ
P
I
C
CE(sat)
tr · tf
Forward voltage
Reverse current
Input
charac-
teristics
Dark current
Peak sensitivity wavelength
Output
charac-
teristics
Collector current
Collector-emitter saturation
voltage
Transfer
charac-
teristics
Response time
z
zElectrical and optical characteristic curves
zz
Min.
−
−
−
−
0.2
−
−
Typ.
1.3
−
−
800
1.0
−
10
Max.
1.6
10
0.5
−
−
0.4
−
Unit
V
µA
µA
nm
mA
V
µs
Conditions
I
F
=50mA
R
=5V
V
V
CE
=10V
−
V
CE
=5V, IF=20mA
I
F
=20mA, IC=0.1mA
CC
=5V, IF=20mA, RL=100Ω
V
RPI-441C1
120
(mW)
C
/ P
D
100
PDP
80
60
40
20
0
−20 0 40 60 8020 100
POWER DISSIPATION /
COLLECTOR POWER DISSIPATION : P
C
AMBIENT TEMPERATURE : Ta (°C)
Fig.1 Power dissipation and collector power
dissipation vs. ambient temperature
1000
(nA)
100
CEO
10
1
DARK CURRENT : I
0.1
0 25 50 75 100−25
AMBIENT TEMPERATURE : Ta (°C)
VCE=10V
VCE=20V
VCE=30V
Fig.4 Dark current vs.
ambient temperature
50
(mA)
F
40
30
20
10
FORWARD CURRENT : I
0
0.40 0.8 1.2 2.01.6
FORWARD VOLTAGE : VF (V)
Fig.2 Forward current vs. forward voltage
(%)
C
100
50
RELATIVE COLLECTOR CURRENT : I
0
0 −25 250 1007550
AMBIENT TEMPERATURE : Ta (°C)
Fig.5 Relative output vs.
ambient temperature
−25°C
0°C
25°C
50°C
75°C
2.0
(mA)
C
1.0
COLLECTOR CURRENT : I
0
0403010 20 50
FORWARD CURRENT : IF (mA)
Fig.3 Collector current vs. forward current
100
(%)
C
50
RELATIVE COLLECTOR CURRENT : I
0
0 3.01.0 2.0
DISTANCE : d (mm)
Fig.6 Relative output vs. distance (Ι)
VCE=5V
F
=20mA
I
Ta=25°C
d