Philips PBYR745B Datasheet
Philips Semiconductors Product specification
Rectifier diodes PBYR745B, PBYR745D series
Schottky barrier
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching V
• Reverse surge capability
• High thermal cycling performance I
k a
tab 3
• Low thermal resistance
GENERAL DESCRIPTION
Schottky rectifier diodes in a surface mounting plastic envelope. Intended for use as output rectifiers in low voltage,
high frequency switched mode power supplies.
The PBYR745B series is supplied in the SOT404 surface mounting package.
The PBYR745D series is supplied in the SOT428 surface mounting package.
PINNING SOT404 SOT428
= 40 V/ 45 V
R
= 7.5 A
F(AV)
VF ≤ 0.57 V
PIN DESCRIPTION
tab
tab
1 no connection
2 cathode
3 anode
tab cathode
1
2
13
123
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
PBYR7 40B 45B
PBYR7 40D 45D
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
I
RRM
T
j
T
stg
1. It is not possible to make connection to pin 2 of the SOT404 or SOT428 package.
Peak repetitive reverse - 40 45 V
voltage
Working peak reverse - 40 45 V
voltage
Continuous reverse voltage Tmb ≤ 114 ˚C - 40 45 V
Average rectified forward square wave; δ = 0.5; Tmb ≤ 136 ˚C - 7.5 A
current
Repetitive peak forward square wave; δ = 0.5; Tmb ≤ 136 ˚C - 15 A
current
Non-repetitive peak forward t = 10 ms PBYR7..B - 135 A
current t = 8.3 ms - 150 A
t = 10 ms PBYR7..D - 100 A
t = 8.3 ms - 110 A
sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied V
Peak repetitive reverse pulse width and repetition rate - 1 A
surge current limited by T
Operating junction - 150 ˚C
j max
RRM(max)
temperature
Storage temperature - 65 175 ˚C
July 1998 1 Rev 1.200
Philips Semiconductors Product specification
Rectifier diodes PBYR745B, PBYR745D series
Schottky barrier
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
R
th j-a
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
C
d
Thermal resistance junction - - 3 K/W
to mounting base
Thermal resistance junction pcb mounted, minimum footprint, FR4 - 50 - K/W
to ambient board
Forward voltage IF = 7.5 A; Tj = 125˚C - 0.45 0.57 V
IF = 15 A; Tj = 125˚C - 0.65 0.72 V
IF = 15 A - 0.64 0.84 V
Reverse current VR = V
Junction capacitance VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C - 270 - pF
VR = V
RWM
; Tj = 100˚C - 17 22 mA
RWM
- 0.13 1 mA
July 1998 2 Rev 1.200
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