Philips NE5517N, NE5517AN Datasheet

Philips Semiconductors Linear Products Product specification

NE5517/5517ADual operational transconductance amplifier

92

August 31, 1994 853-0887 13721

DESCRIPTION

The NE5517 contains two current-controlled transconductance
amplifiers, each with a differential input and push-pull output. The
NE5517 offers significant design and performance advantages over
similar devices for all types of programmable gain applications.
Circuit performance is enhanced through the use of linearizing
diodes at the inputs which enable a 10dB signal-to-noise
improvement referenced to 0.5% THD. The NE5517 is suited for a
wide variety of industrial and consumer applications and is
recommended as the preferred circuit in the Dolby* HX (Headroom
Extension) system.

Constant impedance buffers on the chip allow general use of the
NE5517. These buffers are made of Darlington transistor and a
biasing network which changes bias current in dependence of I

ABC

.

Therefore, changes of output offset voltages are almost eliminated.
This is an advantage of the NE5517 compared to LM13600. With
the LM13600, a burst in the bias current I

ABC

guides to an audible
offset voltage change at the output. With the constant impedance
buffers of the NE5517 this effect can be avoided and makes this
circuit preferable for high quality audio applications.

FEATURES

•Constant impedance buffers

•∆VBE of buffer is constant with amplifier IBIAS change

•Pin compatible with LM13600

•Excellent matching between amplifiers

•Linearizing diodes

•High output signal-to-noise ratio

PIN CONFIGURATION

1
2
3
4
5
6
7
8

9

10

11

12

13

14

16
15

I

ABCa

D

a

+IN

a

-IN

a

VO

a

V-

INBUFFER

a

VO

BUFFERa

I

ABCb

D

b

+IN

b

-IN

b

VO

b

V+
IN

BUFFERb

VO

BUFFERb

N, D Packages

Top View

APPLICATIONS

•Multiplexers

•Timers

•Electronic music synthesizers

•Dolby HX Systems

•Current-controlled amplifiers, filters

•Current-controlled oscillators, impedances

Dolby is a registered trademark of Dolby Laboratories Inc., San Francisco, Calif.

PIN DESIGNATION

PIN NO. SYMBOL NAME AND FUNCTION

1 I

ABC

Amplifier bias input A
2 D Diode bias A
3 +IN Non-inverting input A
4 -IN Inverting input A
5 V

O

Output A
6 V- Negative supply
7 IN

BUFFER

Buffer input A
8 VO

BUFFER

Buffer output A
9 VO

BUFFER

Buffer output B

10 IN

BUFFER

Buffer input B

11 V+ Positive supply
12 V

O

Output B

13 -IN Inverting input B
14 +IN Non-inverting input B
15 D Diode bias B
16 I

ABC

Amplifier bias input B

Philips Semiconductors Linear Products Product specification

NE5517/5517ADual operational transconductance amplifier

August 31, 1994

93

CIRCUIT SCHEMATIC

V+

11

D4

Q6

Q7

2,15

D2

Q4

Q5

D3

–INPUT

4,13

+INPUT
3,14

AMP BIAS

INPUT

1,16

Q2

Q1

D1

V–

6

Q10

D6

Q11

V

OUTPUT

5,12

Q9

Q8

D5

Q14

Q15 Q16

R1

D7

D8

Q3

7,10

Q12

Q13

8,9

CONNECTION DIAGRAM

NOTE:

1. V+ of output buffers and amplifiers are internally connected.

B
AMP
BIAS

INPUT

B

DIODE

BIAS

B

INPUT

(+)

B

INPUT

(–)

B

OUTPUT

V+ (1)

B

BUFFER

INPUT

B
BUFFER
OUTPUT

AMP
BIAS

INPUT

DIODE

BIAS

INPUT

(+)

INPUT

(–)

OUTPUT

V–

BUFFER

INPUT

BUFFER
OUTPUT

A

A A

A

A

A

A

1 2 3 4 5 6 7 8

16 15 14 13 12 11 10 9

–

+

B

+

–

A

Philips Semiconductors Linear Products Product specification

NE5517/5517ADual operational transconductance amplifier

August 31, 1994

94

ORDERING INFORMATION

DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #

16-Pin Plastic Dual In-Line Package (DIP) 0 to +70°C NE5517N 0406C
16-Pin Plastic Dual In-Line Package (DIP) 0 to +70°C NE5517AN 0406C
16-Pin Small Outline (SO) Package 0 to +70°C NE5517D 0005D

ABSOLUTE MAXIMUM RATINGS

SYMBOL PARAMETER RATING UNIT

V

S

Supply voltage

1

NE5517 36 VDC or ±18 V
NE5517A 44 VDC or ±22 V

P

D

Power dissipation,
T

A

=25°C (still air)

2

NE5517N, NE5517AN 1500 mW
NE5517D 1125 mW

V

IN

Differential input voltage ±5 V

I

D

Diode bias current 2 mA

I

ABC

Amplifier bias current 2 mA

I

SC

Output short-circuit duration Indefinite

I

OUT

Buffer output current

3

20 mA

T

A

Operating temperature range

NE5517N, NE5517AN 0°C to +70 °C

V

DC

DC input voltage +VS to -V

S

T

STG

Storage temperature range -65°C to +150°C °C

T

SOLD

Lead soldering temperature (10sec max) 300 °C

NOTES:

1. For selections to a supply voltage above ±22V, contact factory

2. The following derating factors should be applied above 25°C
N package at 12.0mW/°C
D package at 9.0mW/°C

3. Buffer output current should be limited so as to not exceed package dissipation.

DC ELECTRICAL CHARACTERISTICS

1

NE5517 NE5517A

SYMBOL

PARAMETER

TEST CONDITIONS

Min Typ Max Min Typ Max

UNIT

0.4 5 0.4 2 mV

V

OS

Input offset voltage Over temperature range 5 mV

I

ABC

5µA 0.3 5 0.3 2 mV
∆VOS/∆T Avg. TC of input offset voltage 7 7 µV/°C
VOS including diodes Diode bias current (ID)=500µA 0.5 5 0.5 2 mV

V

OS

Input offset change 5µA ≤ I

ABC

≤ 500µA 0.1 0.1 3 mV

I

OS

Input offset current 0.1 0.6 0.1 0.6 µA
∆IOS/∆T Avg. TC of input offset current 0.001 0.001 µA/°C

I

BIAS

Input bias current

Over temperature range

0.4
1

5
8

0.4
1

5
7

µA
µA

∆IB/∆T Avg. TC of input current 0.01 0.01 µA/°C

g

M

Forward transconductance

Over temperature range

6700
5400

9600 13000 7700

4000

9600 12000 µmho

µmho

gM tracking 0.3 0.3 dB

I

OUT

Peak output current

RL=0, I

ABC

=5µA

R

L

=0, I

ABC

=500µA

R

L

=0,

350
300

5

500

650

3
350
300

5

5007650

µA
µA
µA

Philips Semiconductors Linear Products Product specification

NE5517/5517ADual operational transconductance amplifier

August 31, 1994

95

DC ELECTRICAL CHARACTERISTICS1 (continued)

NE5517 NE5517A

SYMBOL

PARAMETER

TEST CONDITIONS

Min Typ Max Min Typ Max

UNIT

V

OUT

Peak output voltage

Positive RL=∞, 5µA≤I

ABC

≤500µA +12 +14.2 +12 +14.2 V

Negative RL=∞, 5µA≤I

ABC

≤500µA -12 -14.4 -12 -14.4 V

I

CC

Supply current I

ABC

=500µA, both channels 2.6 4 2.6 4 mA

VOS sensitivity

Positive ∆ VOS/∆ V+ 20 150 20 150 µV/V
Negative ∆ VOS/∆ V- 20 150 20 150 µV/V

CMRR

Common-mode rejection
ration

80 110 80 110 dB
Common-mode range ±12 ±13.5 ±12 ±13.5 V
Crosstalk

Referred to input2

20Hz<f<20kHz

100 100 dB

I

IN

Differential input current I

ABC

=0, input=±4V 0.02 100 0.02 10 nA

Leakage current I

ABC

=0 (Refer to test circuit) 0.2 100 0.2 5 nA

R

IN

Input resistance 10 26 10 26 kΩ

B

W

Open-loop bandwidth 2 2 MHz

SR Slew rate Unity gain compensated 50 50 V/µs
IN

BUFFER

Buff. input current 5 0.4 5 0.4 5 µA

VO-

BUFFER

Peak buffer output voltage 5 10 10 V

∆VBE of buffer

Refer to Buffer VBE test3

circuit

0.5 5 0.5 5 mV

NOTES:

1. These specifications apply for VS=±15V, TA=25°C, amplifier bias current (I

ABC

)=500µA, Pins 2 and 15 open unless otherwise specified. The

inputs to the buffers are grounded and outputs are open.

2. These specifications apply for V

S

=±15V, I

ABC

=500µA, R

OUT

=5kΩ connected from the buffer output to -VS and the input of the buffer is

connected to the transconductance amplifier output.

3. V

S

=±15, R

OUT

=5kΩ connected from Buffer output to -VS and 5µA ≤I

ABC

≤500µA.