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Philips Semiconductors Linear Products |
Product specification |
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Dual operational transconductance amplifier |
NE5517/5517A |
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DESCRIPTION
The NE5517 contains two current-controlled transconductance amplifiers, each with a differential input and push-pull output. The NE5517 offers significant design and performance advantages over similar devices for all types of programmable gain applications.
Circuit performance is enhanced through the use of linearizing diodes at the inputs which enable a 10dB signal-to-noise improvement referenced to 0.5% THD. The NE5517 is suited for a wide variety of industrial and consumer applications and is recommended as the preferred circuit in the Dolby* HX (Headroom Extension) system.
Constant impedance buffers on the chip allow general use of the NE5517. These buffers are made of Darlington transistor and a biasing network which changes bias current in dependence of IABC.
Therefore, changes of output offset voltages are almost eliminated.
This is an advantage of the NE5517 compared to LM13600. With the LM13600, a burst in the bias current IABC guides to an audible offset voltage change at the output. With the constant impedance buffers of the NE5517 this effect can be avoided and makes this circuit preferable for high quality audio applications.
FEATURES
•Constant impedance buffers
• VBE of buffer is constant with amplifier IBIAS change
•Pin compatible with LM13600
•Excellent matching between amplifiers
•Linearizing diodes
•High output signal-to-noise ratio
PIN CONFIGURATION
N, D Packages
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IABCa |
1 |
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16 |
IABCb |
Da |
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Db |
2 |
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15 |
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+INa |
3 |
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14 |
+INb |
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-INa |
4 |
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13 |
-INb |
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VOa |
5 |
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12 |
VOb |
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V- |
6 |
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11 |
V+ |
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INBUFFERa |
7 |
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10 |
INBUFFERb |
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VOBUFFERa |
8 |
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9 |
VOBUFFERb |
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Top View
APPLICATIONS
•Multiplexers
•Timers
•Electronic music synthesizers
•Dolby HX Systems
•Current-controlled amplifiers, filters
•Current-controlled oscillators, impedances
Dolby is a registered trademark of Dolby Laboratories Inc., San Francisco, Calif.
PIN DESIGNATION
PIN NO. |
SYMBOL |
NAME AND FUNCTION |
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1 |
IABC |
Amplifier bias input A |
2 |
D |
Diode bias A |
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3 |
+IN |
Non-inverting input A |
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4 |
-IN |
Inverting input A |
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5 |
VO |
Output A |
6 |
V- |
Negative supply |
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7 |
INBUFFER |
Buffer input A |
8 |
VOBUFFER |
Buffer output A |
9 |
VOBUFFER |
Buffer output B |
10 |
INBUFFER |
Buffer input B |
11 |
V+ |
Positive supply |
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12 |
VO |
Output B |
13 |
-IN |
Inverting input B |
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14 |
+IN |
Non-inverting input B |
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15 |
D |
Diode bias B |
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16 |
IABC |
Amplifier bias input B |
August 31, 1994 |
92 |
853-0887 13721 |
Philips Semiconductors Linear Products |
Product specification |
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Dual operational transconductance amplifier |
NE5517/5517A |
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CIRCUIT SCHEMATIC
V+ |
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11 |
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D4 |
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D6 |
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Q14 |
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Q12 |
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Q6 |
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Q10 |
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7,10 |
Q13 |
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8,9 |
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Q7 |
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Q11 |
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2,15 |
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D2 |
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D3 |
VOUTPUT |
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±INPUT |
Q4 |
Q5 |
+INPUT |
5,12 |
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4,13 |
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3,14 |
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1,16 |
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Q15 |
Q16 |
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Q3 |
AMP BIAS |
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Q2 |
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INPUT |
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Q9 |
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D7 |
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R1 |
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Q1 |
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Q8 |
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D8 |
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D1 |
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D5 |
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V± |
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6 |
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CONNECTION DIAGRAM
B |
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B |
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AMP |
B |
B |
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B |
B |
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BIAS |
DIODE |
INPUT |
INPUT |
B |
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BUFFER |
BUFFER |
INPUT |
BIAS |
(+) |
(±) |
OUTPUT |
V+ (1) |
INPUT |
OUTPUT |
16 |
15 |
14 |
13 |
12 |
11 |
10 |
9 |
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± |
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B |
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+ |
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+ |
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A |
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± |
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1 |
2 |
3 |
4 |
5 |
6 |
7 |
8 |
AMP |
DIODE |
INPUT |
INPUT |
OUTPUT |
V± |
BUFFER |
BUFFER |
BIAS |
BIAS |
(+) |
(±) |
A |
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INPUT |
OUTPUT |
INPUT |
A |
A |
A |
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A |
A |
A |
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NOTE:
1. V+ of output buffers and amplifiers are internally connected.
August 31, 1994 |
93 |
Philips Semiconductors Linear Products |
Product specification |
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Dual operational transconductance amplifier |
NE5517/5517A |
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ORDERING INFORMATION
DESCRIPTION |
TEMPERATURE RANGE |
ORDER CODE |
DWG # |
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16-Pin Plastic Dual In-Line Package (DIP) |
0 to +70°C |
NE5517N |
0406C |
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16-Pin Plastic Dual In-Line Package (DIP) |
0 to +70°C |
NE5517AN |
0406C |
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16-Pin Small Outline (SO) Package |
0 to +70°C |
NE5517D |
0005D |
ABSOLUTE MAXIMUM RATINGS
SYMBOL |
PARAMETER |
RATING |
UNIT |
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V |
Supply voltage1 |
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S |
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NE5517 |
36 VDC or ±18 |
V |
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NE5517A |
44 VDC or ±22 |
V |
PD |
Power dissipation, |
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T =25°C (still air)2 |
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A |
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NE5517N, NE5517AN |
1500 |
mW |
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NE5517D |
1125 |
mW |
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VIN |
Differential input voltage |
±5 |
V |
ID |
Diode bias current |
2 |
mA |
IABC |
Amplifier bias current |
2 |
mA |
ISC |
Output short-circuit duration |
Indefinite |
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I |
Buffer output current3 |
20 |
mA |
OUT |
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TA |
Operating temperature range |
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NE5517N, NE5517AN |
0°C to +70 |
°C |
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VDC |
DC input voltage |
+VS to -VS |
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TSTG |
Storage temperature range |
-65°C to +150°C |
°C |
TSOLD |
Lead soldering temperature (10sec max) |
300 |
°C |
NOTES:
1.For selections to a supply voltage above ±22V, contact factory
2.The following derating factors should be applied above 25°C
N package at 12.0mW/°C D package at 9.0mW/°C
3. Buffer output current should be limited so as to not exceed package dissipation.
DC ELECTRICAL CHARACTERISTICS1
SYMBOL |
PARAMETER |
TEST CONDITIONS |
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NE5517 |
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NE5517A |
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UNIT |
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Min |
Typ |
Max |
Min |
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Typ |
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Max |
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0.4 |
5 |
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0.4 |
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2 |
mV |
VOS |
Input offset voltage |
Over temperature range |
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5 |
mV |
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IABC 5μA |
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0.3 |
5 |
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0.3 |
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2 |
mV |
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VOS/ T |
Avg. TC of input offset voltage |
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7 |
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7 |
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μV/°C |
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VOS including diodes |
Diode bias current (ID)=500μA |
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0.5 |
5 |
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0.5 |
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2 |
mV |
VOS |
Input offset change |
5μA ≤ IABC ≤ 500μA |
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0.1 |
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0.1 |
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3 |
mV |
IOS |
Input offset current |
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0.1 |
0.6 |
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0.1 |
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0.6 |
μA |
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IOS/ T |
Avg. TC of input offset current |
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0.001 |
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0.001 |
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μA/°C |
IBIAS |
Input bias current |
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0.4 |
5 |
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0.4 |
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5 |
μA |
Over temperature range |
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1 |
8 |
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1 |
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7 |
μA |
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IB/ T |
Avg. TC of input current |
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0.01 |
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0.01 |
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μA/°C |
gM |
Forward transconductance |
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6700 |
9600 |
13000 |
7700 |
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9600 |
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12000 |
μmho |
Over temperature range |
5400 |
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4000 |
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μmho |
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gM tracking |
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0.3 |
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0.3 |
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dB |
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RL=0, IABC=5μA |
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5 |
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3 |
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5 |
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7 |
μA |
IOUT |
Peak output current |
RL=0, IABC=500μA |
350 |
500 |
650 |
350 |
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500 |
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650 |
μA |
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RL=0, |
300 |
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300 |
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μA |
August 31, 1994 |
94 |
Philips Semiconductors Linear Products |
Product specification |
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Dual operational transconductance amplifier |
NE5517/5517A |
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DC ELECTRICAL CHARACTERISTICS1 (continued)
SYMBOL |
PARAMETER |
TEST CONDITIONS |
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NE5517 |
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NE5517A |
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UNIT |
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Min |
Typ |
Max |
Min |
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Typ |
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Max |
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VOUT |
Peak output voltage |
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Positive |
RL=∞ , 5μA≤IABC≤500μA |
+12 |
+14.2 |
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+12 |
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+14.2 |
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V |
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Negative |
RL=∞ , 5μA≤IABC≤500μA |
-12 |
-14.4 |
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-12 |
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-14.4 |
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V |
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ICC |
Supply current |
IABC=500μA, both channels |
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2.6 |
4 |
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2.6 |
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4 |
mA |
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VOS sensitivity |
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Positive |
VOS/ |
V+ |
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20 |
150 |
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20 |
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150 |
μV/V |
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Negative |
VOS/ |
V- |
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20 |
150 |
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20 |
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150 |
μV/V |
CMRR |
Common-mode rejection |
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80 |
110 |
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80 |
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110 |
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dB |
ration |
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Common-mode range |
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±12 |
±13.5 |
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±12 |
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±13.5 |
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V |
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Crosstalk |
Referred to input2 |
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100 |
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100 |
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dB |
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20Hz<f<20kHz |
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IIN |
Differential input current |
IABC=0, input=±4V |
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0.02 |
100 |
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0.02 |
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10 |
nA |
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Leakage current |
IABC=0 (Refer to test circuit) |
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0.2 |
100 |
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0.2 |
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5 |
nA |
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RIN |
Input resistance |
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10 |
26 |
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10 |
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26 |
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kΩ |
BW |
Open-loop bandwidth |
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2 |
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2 |
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MHz |
SR |
Slew rate |
Unity gain compensated |
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50 |
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50 |
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V/μs |
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INBUFFER |
Buff. input current |
5 |
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0.4 |
5 |
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0.4 |
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5 |
μA |
VO- |
Peak buffer output voltage |
5 |
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10 |
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10 |
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V |
BUFFER |
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Refer to Buffer V test3 |
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VBE of buffer |
circuit |
BE |
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0.5 |
5 |
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0.5 |
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5 |
mV |
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NOTES:
1.These specifications apply for VS=±15V, TA=25°C, amplifier bias current (IABC)=500μA, Pins 2 and 15 open unless otherwise specified. The inputs to the buffers are grounded and outputs are open.
2.These specifications apply for VS=±15V, IABC=500μA, ROUT=5kΩ connected from the buffer output to -VS and the input of the buffer is connected to the transconductance amplifier output.
3.VS=±15, ROUT=5kΩ connected from Buffer output to -VS and 5μA ≤IABC ≤500μA.
August 31, 1994 |
95 |
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