Philips MAC223A8X User Manual
Philips Semiconductors Product specification
Triacs MAC223A8X
GENERAL DESCRIPTION QUICK REFERENCE DATA
Passivated triac in a full pack, plastic SYMBOL PARAMETER MAX. UNIT envelope, intended for use in applications requiring high bidirectional transient and blockingvoltagecapability and high thermal V
DRM
cycling performance. Typical applications voltages
include motor control, industrial and
domestic lighting, heating and static I
T(RMS)
switching.
I
TSM
PINNING - SOT186A PIN CONFIGURATION SYMBOL
Repetitive peak off-state 600 V
RMS on-state current 20 A
Non-repetitive peak on-state 230 A
current
PIN DESCRIPTION
case
1 main terminal 1
2 main terminal 2
3 gate
case isolated
123
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DRM
I
T(RMS)
I
TSM
I2tI
Repetitive peak off-state - 600
voltages
RMS on-state current full sine wave; Ths ≤ 25 ˚C - 20 A
Non-repetitive peak full sine wave; Tj = 25 ˚C prior to
on-state current surge
2
t for fusing t = 10 ms - 180 A2s
t = 16.7 ms - 230 A
dIT/dt Repetitive rate of rise of ITM = 30 A; IG = 0.2 A;
on-state current after dIG/dt = 0.2 A/µs
triggering T2+ G+ - 50 A/µs
I
V
P
P
T
T
GM
GM
GM
G(AV)
stg
j
Peak gate current - 2 A
Peak gate voltage - 5 V
Peak gate power - 5 W
Average gate power over any 20 ms period - 0.5 W
Storage temperature -40 150 ˚C
Operating junction -40 125 ˚C
temperature
T2+ G- - 50 A/µs
T2- G- - 50 A/µs
T2- G+ - 10 A/µs
1
T1T2
V
September 2002 1 Rev 1.000
Philips Semiconductors Product specification
Triacs MAC223A8X
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
R
th j-a
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
Thermal resistance full or half cycle
junction heatsink with heatsink compound - - 3.85 K/W
without heatsink compound - - 5.5 K/W
Thermal resistance in free air - 55 - K/W
junction to ambient
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - - 2500 V
three terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree
Capacitance from T2 to external f = 1 MHz - 10 - pF
heatsink
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
GT
Gate trigger current VD = 12 V; IT = 0.1 A
T2+ G+ - 6 50 mA
T2+ G- - 10 50 mA
T2- G- - 11 50 mA
T2- G+ - 23 75 mA
I
L
Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - 8 40 mA
T2+ G- - 30 60 mA
T2- G- - 18 40 mA
T2- G+ - 15 60 mA
I
H
Holding current VD = 12 V; IGT = 0.1 A
T2+ - 7 30 mA
T2- - 12 30 mA
V
T
V
GT
I
D
On-state voltage IT = 30 A - 1.3 1.55 V
Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V
Off-state leakage current VD = V
; Tj = 125 ˚C - 0.1 0.5 mA
DRM(max)
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Critical rate of rise of VDM = 67% V
off-state voltage exponential waveform; gate open circuit
dV
/dt Critical rate of change of VDM = 400 V; Tj = 95 ˚C; I
com
t
gt
commutating voltage dI
Gate controlled turn-on ITM = 30 A; VD = V
/dt = 9 A/ms; gate open circuit
com
time dIG/dt = 5 A/µs
; Tj = 125 ˚C; 100 300 - V/µs
DRM(max)
= 25 A; - 10 - V/µs
T(RMS)
; IG = 0.1 A; - 2 - µs
DRM(max)
September 2002 2 Rev 1.000
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