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MAC223A8X
User Manual
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Philips MAC223A8X User Manual

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Philips Semiconductors Product specification
Triacs MAC223A8X

GENERAL DESCRIPTION QUICK REFERENCE DATA

Passivated triac in a full pack, plastic SYMBOL PARAMETER MAX. UNIT envelope, intended for use in applications requiring high bidirectional transient and blockingvoltagecapability and high thermal V

cycling performance. Typical applications voltages include motor control, industrial and domestic lighting, heating and static I
T(RMS)
switching.
I
TSM

PINNING - SOT186A PIN CONFIGURATION SYMBOL

Repetitive peak off-state 600 V
RMS on-state current 20 A Non-repetitive peak on-state 230 A
current
PIN DESCRIPTION
case
1 main terminal 1 2 main terminal 2 3 gate
case isolated
123
G

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
I
T(RMS)
I
TSM
I2tI
Repetitive peak off-state - 600 voltages
RMS on-state current full sine wave; Ths ≤ 25 ˚C - 20 A Non-repetitive peak full sine wave; Tj = 25 ˚C prior to on-state current surge
2
t for fusing t = 10 ms - 180 A2s
t = 16.7 ms - 230 A
dIT/dt Repetitive rate of rise of ITM = 30 A; IG = 0.2 A;
on-state current after dIG/dt = 0.2 A/µs triggering T2+ G+ - 50 A/µs
I V P P T T
GM
GM GM
G(AV) stg j
Peak gate current - 2 A Peak gate voltage - 5 V Peak gate power - 5 W Average gate power over any 20 ms period - 0.5 W Storage temperature -40 150 ˚C Operating junction -40 125 ˚C temperature
T2+ G- - 50 A/µs T2- G- - 50 A/µs T2- G+ - 10 A/µs
1
T1T2
V
September 2002 1 Rev 1.000
Philips Semiconductors Product specification
Triacs MAC223A8X

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
R
th j-a

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
Thermal resistance full or half cycle junction heatsink with heatsink compound - - 3.85 K/W
without heatsink compound - - 5.5 K/W Thermal resistance in free air - 55 - K/W junction to ambient
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - - 2500 V three terminals to external waveform; heatsink R.H. ≤ 65% ; clean and dustfree
Capacitance from T2 to external f = 1 MHz - 10 - pF heatsink

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
GT
Gate trigger current VD = 12 V; IT = 0.1 A
T2+ G+ - 6 50 mA T2+ G- - 10 50 mA T2- G- - 11 50 mA T2- G+ - 23 75 mA
I
L
Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - 8 40 mA T2+ G- - 30 60 mA T2- G- - 18 40 mA T2- G+ - 15 60 mA
I
H
Holding current VD = 12 V; IGT = 0.1 A
T2+ - 7 30 mA T2- - 12 30 mA
V
T
V
GT
I
D
On-state voltage IT = 30 A - 1.3 1.55 V Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V Off-state leakage current VD = V
; Tj = 125 ˚C - 0.1 0.5 mA
DRM(max)

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Critical rate of rise of VDM = 67% V
off-state voltage exponential waveform; gate open circuit
dV
/dt Critical rate of change of VDM = 400 V; Tj = 95 ˚C; I
com
t
gt
commutating voltage dI Gate controlled turn-on ITM = 30 A; VD = V
/dt = 9 A/ms; gate open circuit
com
time dIG/dt = 5 A/µs
; Tj = 125 ˚C; 100 300 - V/µs
DRM(max)
= 25 A; - 10 - V/µs
T(RMS)
; IG = 0.1 A; - 2 - µs
DRM(max)
September 2002 2 Rev 1.000
Philips Semiconductors Product specification
Triacs MAC223A8X
P
(W)
tot
30
1
20
10
Ths(max) (°C)
= 180
120 90
60 30
10
48
87
IT (RMS) (A)
25
20
15
10
5
0
0
Fig.1. Maximum on-state dissipation, P
on-state current, I
1000
100
10
10us 100us 1ms 10ms 100ms
510152025
, where α = conduction angle.
T(RMS)
ITSM / A
dI /dt limit
T
I
T2- G+ quadrant
T
Tj initial = 25 C max
T / s
IT(RMS) (A)
T
, versus rms
tot
I
TSM
time
Fig.2. Maximum permissible non-repetitive peak
on-state current I
sinusoidal currents, tp ≤ 20ms.
ITSM / A
200
150
100
, versus pulse width tp, for
TSM
I
I
T
Tj initial = 25 C max
TSM
T
time
125
0
-50 0 50 100 150
Fig.4. Maximum permissible rms current I
versus heatsink temperature Ths.
IT(RMS) / A
50
40
30
20
10
0
0.01 0.1 1 10 surge duration / s
Ths (°C)
T(RMS)
,
Fig.5. Maximum permissible repetitive rms on-state
current I
VGT(25 C)
1.6
1.4
1.2
1
, versus surge duration, for sinusoidal
T(RMS)
currents, f = 50 Hz; Ths ≤ 91˚C.
VGT(Tj)
50
0
1 10 100 1000
Number of cycles at 50Hz
Fig.3. Maximum permissible non-repetitive peak
on-state current I
sinusoidal currents, f = 50 Hz.
, versus number of cycles, for
TSM
0.8
0.6
0.4
-50 0 50 100 150 Tj / C
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
September 2002 3 Rev 1.000
Philips Semiconductors Product specification
Triacs MAC223A8X
IGT(Tj)
IGT(25 C)
5
4
3
2
1
0
-50 0 50 100 150 Tj / C
T2+ G+ T2+ G­T2- G-
T2- G+
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
IL(Tj)
IL(25 C)
3
2.5
2
1.5
1
0.5
IT / A
80
Tj = 125 C
Tj = 25 C
70 60
Vo = 1.073 V Rs = 0.015 ohms
50 40 30 20 10
0
0 0.5 1 1.5 2 2.5 3
BTA140
typ max
VT / V
Fig.10. Typical and maximum on-state characteristic.
Z
(K/W)
th j-hs
10
with heatsink compound without heatsink compound
1
0.1
0.01
unidirectional
bidirectional
t
P
p
D
t
0
-50 0 50 100 150 Tj / C
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
IH(Tj)
IH(25C)
3
2.5
2
1.5
1
0.5
0
-50 0 50 100 150 Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
0.001 10us 0.1ms 1ms 10ms 0.1s 1s
Fig.11. Transient thermal impedance Z
pulse width tp.
dV/dt (V/us)
1000
off-state dV/dt limit
100
dIcom/dt =
25 A/ms
10
1
0 50 100 150
20
12
Tj / C
9.015
7.0
tp (s)
th j-hs
10s
, versus
Fig.12. Typical commutation dV/dt versus junction
temperature, parameter commutation dIT/dt. The triac
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dIT/dt.
September 2002 4 Rev 1.000
Philips Semiconductors Product specification
Triacs MAC223A8X

MECHANICAL DATA

Dimensions in mm Net Mass: 2 g
10.3
Recesses (2x)
2.5
0.8 max. depth
3 max.
not tinned
13.5 min.
0.4
M
max
3.2
3.0
123
5.08
2.8
2.54
15.8 max.
3
19
max.
seating
plane
0.5
2.5
4.6
max
2.9 max
6.4
0.6
2.5
15.8 max
Fig.13. SOT186A; The seating plane is electrically isolated from all terminals.
1.3
1.0 (2x)
0.9
0.7
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
September 2002 5 Rev 1.000
Philips Semiconductors Product specification
Triacs MAC223A8X

DEFINITIONS

DATA SHEET STATUS DATA SHEET PRODUCT DEFINITIONS
STATUS
Objective data Development This data sheet contains data from the objective specification for
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Product data Production This data sheet contains data from the product specification. Philips
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 2002
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
1
STATUS
2
product development. Philips Semiconductors reserves the right to change the specification in any manner without notice
Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product
Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1 Please consult the most recently issued datasheet before initiating or completing a design. 2 The product status of the device(s) described in this datasheet may have changed since this datasheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
September 2002 6 Rev 1.000
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