Philips LX1214E500X Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
LX1214E500X
NPN microwave power transistor
Preliminary specification
Supersedes data of December 1994
File under Discrete Semiconductors, SC15
1997 Feb 18
Philips Semiconductors Preliminary specification
NPN microwave power transistor LX1214E500X
FEATURES
• Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
• Interdigitated structure provides
high emitter efficiency
• Gold metallization realizes very
good stability of the characteristics
and excellent lifetime
• Multicell geometry gives good
balance of dissipated power and
low thermal resistance
• Internal input and output
prematching ensures a good
stability and allows an easier
design of wideband circuits.
APPLICATIONS
Intended for use in common emitter,
class AB amplifiers in CW conditions
for professional applications between
1.2 and 1.4 GHz.
DESCRIPTION
QUICK REFERENCE DATA
Microwave performance up to T
MODE OF
V
OPERATIONf(GHz)
Class AB
1.2 to 1.4 24 0.15 typ. 50 typ. 1 1 typ. 50 see Figs 6
=25°C in a common emitter class AB.
mb
I
CE
CQ
(V)
(A)
(CW)
PINNING - SOT439A
PIN DESCRIPTION
1 collector
2 base
3 emitter connected to flange
handbook, 4 columns
Top view
1
2
P
L1
(W)
33
(dB)
MAM045
G
po
η
(%)
C
Zi; Z
L
(Ω)
and 7
c
b
e
NPN silicon planar epitaxial
microwave power transistor in a
SOT439A metal ceramic flange
package, with emitter connected to
Fig.1 Simplified outline and symbol.
flange.
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 18 2
Philips Semiconductors Preliminary specification
NPN microwave power transistor LX1214E500X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CER
V
CEO
V
EBO
I
C
P
i
P
tot
T
stg
T
j
T
sld
Note
1. Up to 0.2 mm from ceramic.
collector-base voltage open emitter − 45 V
collector-emitter voltage RBE= 220 Ω−30 V
collector-emitter voltage open base − 25 V
emitter-base voltage open collector − 3V
collector current (DC) − 9A
input power f = 1.2 to 1.4 GHz; VCC= 24 V; class AB − 7W
total power dissipation Tmb=75°C − 70 W
storage temperature −65 +200 °C
junction temperature − 200 °C
soldering temperature t ≤ 10 s; note 1 − 235 °C
10
handbook, halfpage
I
C
(A)
1
1
10
Tmb≤ 75°C.
(1) Region of permissible DC operation.
Fig.2 DC SOAR.
MLC436
I
V (V)
101
CE
2
10
80
handbook, halfpage
P
tot
(W)
60
40
20
0
0 50 100 200
150
MLC437
o
T ( C)
mb
Fig.3 Power derating curve.
1997 Feb 18 3
Philips Semiconductors Preliminary specification
NPN microwave power transistor LX1214E500X
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MAX. UNIT
R
th j-mb
R
th mb-h
Note
1. See
“Mounting recommendations in the General part of handbook SC15”
CHARACTERISTICS
=25°C unless otherwise specified.
T
mb
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
V
(BR)CBO
V
(BR)CER
V
(BR)EBO
h
FE
thermal resistance from junction to mounting base Tj= 100 °C 1.3 K/W
thermal resistance from mounting base to heatsink note 1 0.2 K/W
.
collector cut-off current IE= 0; VCB=20V − 4.5 mA
collector-base breakdown voltage IC=22mA 45 − V
collector-emitter breakdown voltage IC= 150 mA; RBE= 220 Ω 30 − V
emitter-base breakdown voltage IC=22mA 3 − V
DC current gain IC= 4.5 A; VCE= 3 V 15 100
APPLICATION INFORMATION
Microwave performance up to T
MODE OF
OPERATION
f
(GHz)
=25°C in a common-emitter class AB amplifier.
mb
V
(V)
CE
I
CQ
(A)
P
L1
(W)
G
po
(dB)
η
(%)
C
Zi; Z
(Ω)
Class AB (CW) 1.2 to 1.4 24 0.15 typ. 50 typ. 11 typ. 50 see Figs 6
and 7
L
1997 Feb 18 4
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