Philips lv1721e50r DATASHEETS

DISCRETE SEMICONDUCTORS

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LV1721E50R

NPN microwave power transistor

Product specification
Supersedes data of June 1992

1997 Feb 19

Philips Semiconductors Product specification

NPN microwave power transistor LV1721E50R

FEATURES

• Interdigitated structure provides high emitter efficiency

• Diffused emitter ballasting resistor provides excellent

current sharing and withstanding a high VSWR

• Gold metallization realizes very stable characteristics
and excellent lifetime

• Multicell geometry gives good balance of dissipated
power and low thermal resistance

• Internal input and output prematching ensures good
stability and allows an easier design of wideband
circuits.

APPLICATIONS

• Common emitter class-A amplifiers in CW conditions for
military and professional applications in the 1.7 GHz to

2.1 GHz band.

DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in
a SOT445A metal ceramic flange package with the emitter
connected to the flange.

PINNING - SOT445A

PIN DESCRIPTION

1 collector
2 base
3 emitter connected to flange

handbook, halfpage

33

Top view

Marking code: 1721E50R

1

2

Fig.1 Simplified outline and symbol.

c

b

e

MAM251

QUICK REFERENCE DATA

Microwave performance up to T

MODE OF OPERATION

=25°C in a common emitter class-A wideband amplifier.

mb

f

(GHz)

V

(V)

CE

I

(A)

C

P

L1

(W)

G

po

(dB)

Zi; Z

(Ω)

L

Class-A (CW) 1.7 to 2.1 16 1.1 ≥5 ≥7 see Fig 6

WARNING

Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

1997 Feb 19 2

Philips Semiconductors Product specification

NPN microwave power transistor LV1721E50R

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CER

V

CEO

V

EBO

I

C

P

tot

T

stg

T

j

T

sld

collector-base voltage open emitter − 40 V
collector-emitter voltage RBE=47Ω−20 V
collector-emitter voltage open base − 15 V
emitter-base voltage open collector − 3V
collector current (DC) − 2A
total power dissipation Tmb≤ 75 °C − 18 W
storage temperature −65 +200 °C
operating junction temperature − 200 °C
soldering temperature at 0.1 mm from case; t ≤ 10 s − 235 °C

10

handbook, halfpage

I

C

(A)

1

−1

10

−2

10

110

Tmb≤ 75°C.
(1) Region of permissible DC operation.
(2) Permissible extension provided RBE≤ 47 Ω.

(1) (2)

15

Fig.2 DC SOAR.

VCE (V)

MGL004

20

handbook,

P

tot

(W)

16

12

8

4

2

10

0

0 50 100 200

MGD971

150

Tmb (°C)

Fig.3 Power derating curve.

1997 Feb 19 3