Philips LEE1015T Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
LEE1015T
NPN microwave power transistor
Product specification
Supersedes data of November 1994
File under Discrete Semiconductors, SC15
1997 Feb 18
Philips Semiconductors Product specification
NPN microwave power transistor LEE1015T
FEATURES
• Diffused emitter ballasting resistors providing excellent
current sharing and withstanding a high VSWR
• Interdigitated structure provides high emitter efficiency
• Gold metallization realizes very good stability of the
characteristics and excellent lifetime
• Multicell geometry gives good balance of dissipated
power and low thermal resistance.
APPLICATIONS
Intended for use in common emitter, class A power
amplifiers for applications that require a high level of
linearity.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a SOT122A metal ceramic package.
PINNING - SOT122A
PIN DESCRIPTION
1 collector
2 emitter
3 base
4 emitter
handbook, halfpage
Marking code: 1015T.
4
31
2
MAM229
Fig.1 Simplified outline and symbol.
c
b
e
QUICK REFERENCE DATA
Microwave performance up to T
MODE OF OPERATION
=25°C in a common base class A narrowband amplifier (guaranteed values).
mb
f
(MHz)
V
(V)
CE
I
C
(mA)
P
L1
(W)
G
po
(dB)
d
im
(dB)
Class A (CW) 860 20 140 >1 >13 <−57 note 1
Note
1. The stated intermodulation distortion level is referred to the total output power of 18.25 dBm, which corresponds to
the sum of the power carried by each of the two equal amplitude tones at f
= 859 MHz and f2= 861 MHz.
1
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All
persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
1997 Feb 18 2
Philips Semiconductors Product specification
NPN microwave power transistor LEE1015T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CER
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
T
sld
Note
1. Up to 0.2 mm from ceramic.
collector-base voltage open emitter − 40 V
collector-emitter voltage RBE=10Ω−40 V
collector-emitter voltage open base − 22 V
emitter-base voltage open collector − 3V
collector current − 500 mA
total power dissipation Tmb=75°C − 7.5 W
storage temperature −65 +150 °C
junction temperature − 200 °C
soldering temperature t ≤ 10 s; note 1 − 235 °C
T
amb
MLA736
(
10
handbook, halfpage
P
tot
(W)
7.5
5.0
2.5
0
−50 20050 150
0
100
Fig.2 Maximum power dissipation derating as a
function of mounting base temperature.
handbook, halfpage
o
C)
1
I
C
(A)
−1
10
−2
10
Tmb=75°C.
(1) Region of permissible DC operation.
(2) Possible extension provided RBE≤ 10Ω.
101
VCE (V)
MBB632
(2)(1)
2
10
Fig.3 DC SOAR.
MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
1997 Feb 18 3
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